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    NONVOLATILE STORAGE DEVICE
    2.
    发明申请
    NONVOLATILE STORAGE DEVICE 有权
    非易失存储器件

    公开(公告)号：US20120217464A1

    公开(公告)日：2012-08-30

    申请号：US13404678

    申请日：2012-02-24

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    IPC分类号： H01L45/00

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

    摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

    摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

    Nonvolatile storage device
    7.
    发明授权
    Nonvolatile storage device 有权
    非易失存储设备

    公开(公告)号：US08895952B2

    公开(公告)日：2014-11-25

    申请号：US13404678

    申请日：2012-02-24

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

    摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

    摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

    Semiconductor memory device with resistance change film and method of manufacturing the same
    8.
    发明授权
    Semiconductor memory device with resistance change film and method of manufacturing the same 有权
    具有电阻变化膜的半导体存储器件及其制造方法

    公开(公告)号：US09595567B2

    公开(公告)日：2017-03-14

    申请号：US13585141

    申请日：2012-08-14

    申请人： Kazuhiko Yamamoto

    发明人： Kazuhiko Yamamoto

    IPC分类号： H01L29/49 ,  H01L27/24 ,  H01L29/40 ,  H01L45/00

    CPC分类号： H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1616

    摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of insulating layers, a plurality of first interconnection layers, a plurality of second interconnection layers, a plurality of memory cells, and a resistance change film. The insulating layers and first interconnection layers are arranged in parallel with the semiconductor substrate. The second interconnection layers are arranged so as to intersect the first interconnection layers. The second interconnection layers are arranged perpendicular to the semiconductor substrate. The memory cells are arranged at intersections of the first and second interconnection layers. Each of the memory cells includes the resistance change film arranged between the first and second interconnection layers. The side of the first interconnection layer in contact with the resistance change film is retreated more in a direction to separate from the second interconnection layer than the side of the insulating layer.

    摘要翻译： 根据一个实施例，半导体存储器件包括半导体衬底，多个绝缘层，多个第一互连层，多个第二互连层，多个存储单元和电阻变化膜。 绝缘层和第一互连层与半导体衬底平行布置。 第二互连层被布置成与第一互连层相交。 第二互连层被布置成垂直于半导体衬底。 存储单元布置在第一和第二互连层的交点处。 每个存储单元包括布置在第一和第二互连层之间的电阻变化膜。 与电阻变化膜接触的第一互连层的一侧比与绝缘层的侧面沿着与第二互连层分离的方向更多地退避。