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    NONVOLATILE STORAGE DEVICE
    1.
    发明申请
    NONVOLATILE STORAGE DEVICE 有权
    非易失存储器件

    公开(公告)号：US20120217464A1

    公开(公告)日：2012-08-30

    申请号：US13404678

    申请日：2012-02-24

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    IPC分类号： H01L45/00

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

    摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

    摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

    Nonvolatile storage device
    6.
    发明授权
    Nonvolatile storage device 有权
    非易失存储设备

    公开(公告)号：US08895952B2

    公开(公告)日：2014-11-25

    申请号：US13404678

    申请日：2012-02-24

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

    摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

    摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

    Sensor control apparatus and sensor control method
    8.
    发明授权
    Sensor control apparatus and sensor control method 有权
    传感器控制装置和传感器控制方法

    公开(公告)号：US08874349B2

    公开(公告)日：2014-10-28

    申请号：US13419804

    申请日：2012-03-14

    申请人： Tomohiro Tajima ,  Satoshi Ishikawa ,  Kunihiko Yonezu

    发明人： Tomohiro Tajima ,  Satoshi Ishikawa ,  Kunihiko Yonezu

    IPC分类号： F02D28/00 ,  B60W10/06 ,  F02D41/14 ,  F02N11/08 ,  F02D41/04 ,  G01N33/18

    CPC分类号： F02N11/0814 ,  F02D41/042 ,  F02D41/1455 ,  F02D41/1494 ,  G01N33/18 ,  G01N33/1826 ,  Y02T10/48

    摘要： A sensor control apparatus including a gas sensor having a sensor element, a housing and a base part formed of a resin. The apparatus includes a heating part and a control part. When the control part determines that a predetermined automatic stop condition has been satisfied, the control part switches from a control for maintaining the temperature of the sensor element at an activating temperature to a control in a stop state for reducing at least one of voltage and current supplied to the heating part so as to set a temperature of the base part to a value equal to or lower than a shape holding temperature of the resin. Also disclosed is a sensor control method for holding a temperature of a sensor element to an activating temperature.

    摘要翻译： 一种传感器控制装置，包括具有传感器元件的气体传感器，壳体和由树脂形成的基部。 该装置包括加热部和控制部。 当控制部分确定已经满足预定的自动停止条件时，控制部分从用于将传感器元件的温度保持在激活温度的控制切换到停止状态的控制，以减少电压和电流中的至少一个 供给到加热部，以将基部的温度设定为等于或低于树脂的形状保持温度的值。 还公开了一种用于将传感器元件的温度保持在激活温度的传感器控制方法。

    Thermal sensing structure and insulating structure of thermal sensing circuit
    9.
    发明授权
    Thermal sensing structure and insulating structure of thermal sensing circuit 有权
    热感应电路的热敏结构和绝缘结构

    公开(公告)号：US08794827B2

    公开(公告)日：2014-08-05

    申请号：US12654401

    申请日：2009-12-18

    申请人： Satoshi Ishikawa ,  Susumu Yamamoto

    发明人： Satoshi Ishikawa ,  Susumu Yamamoto

    IPC分类号： G01K5/00

    CPC分类号： G01K13/10 ,  G01K1/08 ,  G01K1/14 ,  G01K7/16

    摘要： Flexible circuits 2, 3 are formed on a flexible insulating sheet 1. A thermal sensor 4 is connected between the circuits 2, 3. The thermal sensor 4 and connecting parts 5 are integrally covered with an elastic insulating resin 6. While the insulating sheet 1 is bent together with the insulating resin 6, the thermal sensor 4 is pushed onto an object to be sensed 8 via the insulating sheet 1. A plurality of thermal sensors 4 are connected in series in a longitudinal direction of the insulating sheet 1. The insulating resin 6 covers the thermal sensors 4 and the connecting parts 5.

    摘要翻译： 柔性电路2,3形成在柔性绝缘片1上。热传感器4连接在电路2,3之间。热传感器4和连接部5被弹性绝缘树脂6整体覆盖。而绝缘片1 与绝缘树脂6一起弯曲，热传感器4通过绝缘片1被推到被感测物体8上。多个热传感器4沿绝缘片1的纵向串联连接。绝缘片 树脂6覆盖热传感器4和连接部5。

    Temperature sensor
    10.
    发明授权
    Temperature sensor 有权
    温度感应器

    公开(公告)号：US08672541B2

    公开(公告)日：2014-03-18

    申请号：US13213033

    申请日：2011-08-18

    申请人： Masamichi Ito ,  Koji Matsuo ,  Satoshi Ishikawa

    发明人： Masamichi Ito ,  Koji Matsuo ,  Satoshi Ishikawa

    IPC分类号： G01K7/00

    CPC分类号： G01K1/08 ,  G01K1/16 ,  G01K7/16 ,  G01K2205/04

    摘要： A temperature sensor (100) includes a heat-sensitive element (21) having a thermistor sintered-body (22), an insulating support (31), an insulation sheath (41) and a housing tube (11). The insulating support (31) is in contact with the rear end of the heat-sensitive element (21) and the insulation sheath (41) is in contact with the rear end of the insulating support (31). The housing tube (11) accommodates the heat-sensitive element (21), the insulating support (31) and the insulation sheath (41). The housing tube (11) includes a sheath accommodation portion (14) which accommodates the insulation sheath (41) and a distal accommodation portion (13). The distal accommodation portion (13) is located toward the distal end of the housing tube (11) with respect to the sheath accommodation portion (14), is smaller in outside diameter than the sheath accommodation portion (14), and accommodates at least half of the insulating support (31) as measured from the axially distal end of the insulating support (31).

    摘要翻译： 温度传感器（100）包括具有热敏电阻烧结体（22）的热敏元件（21），绝缘支架（31），绝缘护套（41）和外壳管（11）。 绝缘支撑件（31）与热敏元件（21）的后端接触，并且绝缘护套（41）与绝缘支撑件（31）的后端接触。 容纳管（11）容纳热敏元件（21），绝缘支撑件（31）和绝缘护套（41）。 容纳管（11）包括容纳绝缘护套（41）和远端容纳部分（13）的护套容纳部分（14）。 远侧容纳部（13）相对于护套容置部（14）朝向容纳管（11）的前端侧配置，比护套容纳部（14）的外径小，容纳至少一半 的绝缘支撑件（31），其从绝缘支撑件（31）的轴向远端测量。