利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

68 条记录 (耗时 0.035 秒)

    Tantalum and niobium compounds and their use for chemical vapour deposition (CVD)
    4.
    发明申请
    Tantalum and niobium compounds and their use for chemical vapour deposition (CVD) 失效

    公开(公告)号：US20070042213A1

    公开(公告)日：2007-02-22

    申请号：US11482397

    申请日：2006-07-07

    申请人： Knud Reuter ,  Jorg Sundermeyer ,  Alexei Merkoulov ,  Wolfgang Stolz ,  Kerstin Volz ,  Michael Pokoj ,  Thomas Ochs

    发明人： Knud Reuter ,  Jorg Sundermeyer ,  Alexei Merkoulov ,  Wolfgang Stolz ,  Kerstin Volz ,  Michael Pokoj ,  Thomas Ochs

    IPC分类号： C07F9/00 ,  H01L21/316

    CPC分类号： C07F9/005 ,  C23C16/34 ,  Y10T428/12528

    摘要： Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 mutually independently denote optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 where R═C1 to C4 alkyl, R3 denotes an optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes halogen from the group comprising Cl, Br, I, or NH—R5 where R5═optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or —NR—NR′R″ (hydrazido(−1), wherein R, R′ and R″ have the aforementioned meaning of R, or CH2SiMe3, pseudohalide (e.g. —N3), or silylamide —N(SiMe3)2, R7 and R8 mutually independently denote H, optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

    SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES
    6.
    发明申请
    SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES 审中-公开

    公开(公告)号：US20130146858A1

    公开(公告)日：2013-06-13

    申请号：US13809946

    申请日：2011-07-19

    申请人： Timo Meyer-Friedrichsen ,  Knud Reuter ,  Andreas Elschner ,  Marcus Halik

    发明人： Timo Meyer-Friedrichsen ,  Knud Reuter ,  Andreas Elschner ,  Marcus Halik

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0074 ,  C07D495/04 ,  C07F9/655354 ,  H01L51/0002 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

    摘要： The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal−nR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), or — a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).

    PROCESSES FOR PREPARING NIOBIUM ALKOXIDES, AND NIOBIUM ALKOXIDES PREPARED THEREBY
    7.
    发明申请
    PROCESSES FOR PREPARING NIOBIUM ALKOXIDES, AND NIOBIUM ALKOXIDES PREPARED THEREBY 失效
    制备铌酸钾的方法和制备的铌酸铋

    公开(公告)号：US20080071102A1

    公开(公告)日：2008-03-20

    申请号：US11855219

    申请日：2007-09-14

    申请人： Knud Reuter

    发明人： Knud Reuter

    IPC分类号： C07F9/00

    CPC分类号： C07C29/80 ,  C07C29/88 ,  C07C31/28

    摘要： Processes for preparing high-purity niobium alkoxides, especially niobium ethoxide, are described which include: (a) providing a crude niobium alkoxide starting material comprising at least one compound of the general formula (I) Nb(OR)5   (I) wherein each R independently represents a linear or branched C1-12 alkyl group; and (b) contacting the crude niobium alkoxide starting material with a treatment medium comprising a component selected from the group consisting of (i) one or more alcohols of the general formula (II) in an amount of 0.01 to 5% by weight, (ii) air or an oxygen-containing gas, and (iii) combinations thereof; R1OH   (II) wherein each R1 independently represents a linear or branched C1-12 alkyl group.

    摘要翻译： 描述了制备高纯度铌醇盐，特别是铌乙醇盐的方法，其包括：（a）提供粗制的铌醇盐起始材料，其包含至少一种通式（I）的化合物， 在线公式“end =”lead“？> Nb（OR）5（I）<？in-line-formula description =”In-line Formulas“end =”tail“？>其中 每个R独立地表示直链或支链C 1-12烷基; 和（b）将粗铌醇盐起始原料与包含选自（i）一种或多种通式（II）的醇的组分的处理介质接触，其量为0.01至5重量％（（ ii）空气或含氧气体，和（iii）其组合; <？in-line-formula description =“In-line Formulas”end =“lead”？> R <1> OH（II）<？in-line-formula description =“In-line Formulas” 末端=“尾”→其中每个R 1独立地表示直链或支链C 1-12烷基。

    METHODS OF STABILIZING THIOPHENE DERIVATIVES
    8.
    发明申请
    METHODS OF STABILIZING THIOPHENE DERIVATIVES 失效
    稳定噻吩衍生物的方法

    公开(公告)号：US20070260070A1

    公开(公告)日：2007-11-08

    申请号：US11744264

    申请日：2007-05-04

    申请人： Friedrich Jonas ,  Klaus Wussow ,  Knud Reuter

    发明人： Friedrich Jonas ,  Klaus Wussow ,  Knud Reuter

    IPC分类号： C07D495/02

    CPC分类号： C07D495/04

    摘要： Methods of stabilizing thiophene derivatives of the general formula (I) by treatment with basic compounds: wherein R1 and R2 each independently represents a moiety selected from the group consisting of hydrogen, optionally substituted C1-20 alkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, optionally substituted C1-20 oxyalkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, or wherein R1 and R2 together represent a fused cyclic moiety selected from the group consisting of optionally substituted C1-20 dioxyalkylene groups and C1-20 dioxyarylene groups; and stabilized thiophene derivatives that can be prepared by such methods.

    摘要翻译： 通过用碱性化合物处理来稳定通式（I）的噻吩衍生物的方法：其中R 1和R 2各自独立地表示选自氢 ，任选取代的C 1-20烷基，其可以含有至多5个选自氧和硫的杂原子，任选取代的C 1-20烷氧基，其可以 含有多至5个选自氧和硫的杂原子，或其中R 1和R 2一起代表稠合的环状部分，其选自任选取代的 C 1-20二氧亚烷基和C 1-20二取代的亚芳基; 和可以通过这些方法制备的稳定的噻吩衍生物。