利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.032 秒)

    Tantalum and niobium compounds and their use for chemical vapour deposition (CVD)
    1.
    发明申请
    Tantalum and niobium compounds and their use for chemical vapour deposition (CVD) 失效

    公开(公告)号：US20070042213A1

    公开(公告)日：2007-02-22

    申请号：US11482397

    申请日：2006-07-07

    申请人： Knud Reuter ,  Jorg Sundermeyer ,  Alexei Merkoulov ,  Wolfgang Stolz ,  Kerstin Volz ,  Michael Pokoj ,  Thomas Ochs

    发明人： Knud Reuter ,  Jorg Sundermeyer ,  Alexei Merkoulov ,  Wolfgang Stolz ,  Kerstin Volz ,  Michael Pokoj ,  Thomas Ochs

    IPC分类号： C07F9/00 ,  H01L21/316

    CPC分类号： C07F9/005 ,  C23C16/34 ,  Y10T428/12528

    摘要： Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 mutually independently denote optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 where R═C1 to C4 alkyl, R3 denotes an optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes halogen from the group comprising Cl, Br, I, or NH—R5 where R5═optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or —NR—NR′R″ (hydrazido(−1), wherein R, R′ and R″ have the aforementioned meaning of R, or CH2SiMe3, pseudohalide (e.g. —N3), or silylamide —N(SiMe3)2, R7 and R8 mutually independently denote H, optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

    III/V-semiconductor
    6.
    发明申请
    III/V-semiconductor 审中-公开
    III / V型半导体

    公开(公告)号：US20070012908A1

    公开(公告)日：2007-01-18

    申请号：US11342287

    申请日：2006-01-26

    申请人： Bernardette Kunert ,  Jorg Koch ,  Stefan Reinhard ,  Kerstin Volz ,  Wolfgang Stolz

    发明人： Bernardette Kunert ,  Jorg Koch ,  Stefan Reinhard ,  Kerstin Volz ,  Wolfgang Stolz

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01S5/183 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/0262 ,  H01L29/201 ,  H01L33/06 ,  H01L33/26 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/323 ,  H01S5/34333 ,  H01S5/3434

    摘要： The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand and of a to d on the other hand is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

    摘要翻译： 本发明涉及一种单片集成半导体结构，其包括基于掺杂的Si或掺杂GaP的载流子层和布置在其上的III / V半导体，其组成为Ga x In y y 其中x = 70-100摩尔％，y为0〜 = 0-30摩尔％，a = 0.5-15摩尔％，b = 67.5-99.5摩尔％，c = 0-32.0摩尔％和d = 0-15摩尔％，其中x和 y总是100摩尔％，其中a，b，c和d的总和总是100摩尔％，另一方面，x和y的总和与a的总和的比例 基本上是1：1，其制造方法，新的半导体，其用于生产发光二极管和激光二极管的用途，或者也是基于Si或GaP单片集成在集成电路中的调制器和检测器结构 技术。

    III/V-semiconductor
    7.
    发明授权
    III/V-semiconductor 有权
    III / V型半导体

    公开(公告)号：US08421055B2

    公开(公告)日：2013-04-16

    申请号：US12472224

    申请日：2009-05-26

    申请人： Bernardette Kunert ,  Jorg Koch ,  Stefan Reinhard ,  Kerstin Volz ,  Wolfgang Stolz

    发明人： Bernardette Kunert ,  Jorg Koch ,  Stefan Reinhard ,  Kerstin Volz ,  Wolfgang Stolz

    IPC分类号： H01L33/00

    CPC分类号： H01S5/183 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/0262 ,  H01L29/201 ,  H01L33/06 ,  H01L33/26 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/323 ,  H01S5/34333 ,  H01S5/3434

    摘要： The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

    摘要翻译： 本发明涉及一种单片集成半导体结构，其包括基于掺杂的Si或掺杂的GaP的载流子层和其上配置的具有组成GaxInyNaAsbPcSbd的III / V半导体，其中x = 70-100摩尔％，y = 0- 30摩尔％，a = 0.5-15摩尔％，b = 67.5-99.5摩尔％，c = 0-32.0摩尔％和d = 0-15摩尔％，其中x和y的总和总是 100摩尔％，其中a，b，c和d的总和总是100摩尔％，另一方面，x和y的总和与a的总和的比率是 基本上为1：1，其制造方法，新的半导体，其用于生产发光二极管和激光二极管的用途，或者也是调制器和检测器结构，其基于Si或GaP技术单片集成在集成电路中 。

    Light emitting compositional semiconductor device
    8.
    发明授权
    Light emitting compositional semiconductor device 失效
    发光组合半导体器件

    公开(公告)号：US5057881A

    公开(公告)日：1991-10-15

    申请号：US444194

    申请日：1989-11-30

    申请人： Hans Lobentanzer ,  Wolfgang Stolz ,  Klaus Ploog ,  Julien Nagle

    发明人： Hans Lobentanzer ,  Wolfgang Stolz ,  Klaus Ploog ,  Julien Nagle

    IPC分类号： H01L33/06 ,  H01S5/00 ,  H01S5/34

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/34

    摘要： A multiple quantum well light emitting compositional semiconductor device ch as a laser diode or a light emitting diode has an active region comprising an alternating sequence of layers of well layer material and of barrier layer material. The thickness of the barrier layer and of the adjacent well layers is chosen such that for one type of charge carrier a relatively high probability exists for such charge carriers to be present in the barrier region whereas the other type of charge carriers are localized in the potential wells. In this way it is possible to reduce the probability of non-radiative Auger recombination processes occurring thus reducing the threshold current and increasing the quantum efficiency of the device. This is particularly important since material systems with a small bandgap which lase at long wavelengths suitable for optical fibre transmission normally suffer performance penalties due to non-radiative Auger recombination and these penalties can be substantially reduced by tailoring the layer thicknesses to achieve the described probability distributions.

    摘要翻译： 诸如激光二极管或发光二极管的多量子阱发光组合半导体器件具有包括阱层材料层和势垒层材料的交替序列的有源区。 选择阻挡层和相邻阱层的厚度，使得对于一种类型的电荷载体，存在这样的电荷载流子存在于阻挡区域中的相对高的概率，而另一种类型的载流子被定位在电位 井。 以这种方式，可以降低发生的非辐射俄歇复合过程的可能性，从而降低阈值电流并提高器件的量子效率。 这是特别重要的，因为具有适用于光纤传输的长波长的小带隙的材料系统通常由于非辐射俄歇复合而遭受性能惩罚，并且通过调整层厚度可以显着减少这些惩罚以实现所描述的概率分布 。