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    Method of manufacturing semiconductor device
    1.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08748254B2

    公开(公告)日：2014-06-10

    申请号：US13494328

    申请日：2012-06-12

    申请人： Kwang-wook Lee ,  Sang-jun Lee ,  In-seak Hwang ,  In-sang Jeon ,  Byoung-yong Gwak ,  Ho-kyun An

    发明人： Kwang-wook Lee ,  Sang-jun Lee ,  In-seak Hwang ,  In-sang Jeon ,  Byoung-yong Gwak ,  Ho-kyun An

    IPC分类号： H01L21/00

    CPC分类号： H01L27/10852 ,  H01L21/76816 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/91

    摘要： A method of manufacturing a semiconductor device includes forming a bit line on a substrate comprising an active region; forming an interlayer insulating layer covering the bit line on the substrate; forming a first hole at a location of the active region through the interlayer insulating layer; forming a dummy contact layer by filling the first hole; forming a mold layer on the interlayer insulating layer and the dummy contact layer; forming a second hole at a location of the dummy contact layer through the mold layer; removing the dummy contact layer in the first hole through the second hole; forming an epitaxial layer on a portion of the active region, which is exposed at a lower surface of the first hole; and forming a lower electrode on internal surfaces of the first hole and the second hole.

    摘要翻译： 制造半导体器件的方法包括在包括有源区的衬底上形成位线; 形成覆盖所述基板上的所述位线的层间绝缘层; 在有源区的位置通过层间绝缘层形成第一孔; 通过填充第一孔形成虚拟接触层; 在层间绝缘层和虚拟接触层上形成模层; 在所述模拟接触层的位置处通过所述模制层形成第二孔; 通过第二孔去除第一孔中的虚拟接触层; 在所述有源区的在所述第一孔的下表面处露出的部分上形成外延层; 以及在所述第一孔和所述第二孔的内表面上形成下电极。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130052787A1

    公开(公告)日：2013-02-28

    申请号：US13494328

    申请日：2012-06-12

    申请人： Kwang-wook Lee ,  Sang-jun Lee ,  In-seak Hwang ,  In-sang Jeon ,  Byoung-yong Gwak ,  Ho-kyun An

    发明人： Kwang-wook Lee ,  Sang-jun Lee ,  In-seak Hwang ,  In-sang Jeon ,  Byoung-yong Gwak ,  Ho-kyun An

    IPC分类号： H01L21/02 ,  H01L21/20

    CPC分类号： H01L27/10852 ,  H01L21/76816 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/91

    摘要： A method of manufacturing a semiconductor device includes forming a bit line on a substrate comprising an active region; forming an interlayer insulating layer covering the bit line on the substrate; forming a first hole at a location of the active region through the interlayer insulating layer; forming a dummy contact layer by filling the first hole; forming a mold layer on the interlayer insulating layer and the dummy contact layer; forming a second hole at a location of the dummy contact layer through the mold layer; removing the dummy contact layer in the first hole through the second hole; forming an epitaxial layer on a portion of the active region, which is exposed at a lower surface of the first hole; and forming a lower electrode on internal surfaces of the first hole and the second hole.

    摘要翻译： 制造半导体器件的方法包括在包括有源区的衬底上形成位线; 形成覆盖所述基板上的所述位线的层间绝缘层; 在有源区的位置通过层间绝缘层形成第一孔; 通过填充第一孔形成虚拟接触层; 在层间绝缘层和虚拟接触层上形成模层; 在所述模拟接触层的位置处通过所述模制层形成第二孔; 通过第二孔去除第一孔中的虚拟接触层; 在所述有源区的在所述第一孔的下表面处露出的部分上形成外延层; 以及在所述第一孔和所述第二孔的内表面上形成下电极。

    Electronic devices including electrode walls with insulating layers thereon
    5.
    发明授权
    Electronic devices including electrode walls with insulating layers thereon 失效
    电子设备包括其上具有绝缘层的电极壁

    公开(公告)号：US07888725B2

    公开(公告)日：2011-02-15

    申请号：US12245218

    申请日：2008-10-03

    申请人： In-joon Yeo ,  Tae-hyuk Ahn ,  Kwang-wook Lee ,  Jung-woo Seo ,  Jeong-sic Jeon

    发明人： In-joon Yeo ,  Tae-hyuk Ahn ,  Kwang-wook Lee ,  Jung-woo Seo ,  Jeong-sic Jeon

    IPC分类号： H01L29/94

    CPC分类号： H01L28/90 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

    摘要： An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from the substrate, and an electrode wall of at least one of the conductive electrodes may include a recessed portion. In addition, an insulating layer may be provided on the electrode wall, and portions of the electrode wall may be free of the insulating layer between the substrate and the insulating layer.

    摘要翻译： 电子器件可以包括衬底和在衬底上的多个导电电极。 每个导电电极可以具有远离基板延伸的相应电极壁，并且至少一个导电电极的电极壁可以包括凹部。 此外，可以在电极壁上设置绝缘层，并且电极壁的部分在基板和绝缘层之间可以没有绝缘层。

    Method of removing oxide layer and semiconductor manufacturing apparatus for removing oxide layer
    10.
    发明申请
    Method of removing oxide layer and semiconductor manufacturing apparatus for removing oxide layer 有权
    去除氧化物层的方法和用于去除氧化物层的半导体制造装置

    公开(公告)号：US20050087893A1

    公开(公告)日：2005-04-28

    申请号：US10997902

    申请日：2004-11-29

    申请人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

    发明人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

    IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/3213

    CPC分类号： H01L21/02057 ,  H01L21/31116

    摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.

    摘要翻译： 用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。 垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。 空气从处理室排出，在其中形成真空条件。 将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。 然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。 蒸发的反应层被排出室外。 可以以高选择性去除氧化物层，同时避免下层的损坏或污染。