公开(公告)号：US20080220375A1

公开(公告)日：2008-09-11

申请号：US12074430

申请日：2008-03-04

申请人： Kyoung-Chul Kim ,  Bong-Chan Kim ,  In-Seak Hwang ,  Kwang-Wook Lee

发明人： Kyoung-Chul Kim ,  Bong-Chan Kim ,  In-Seak Hwang ,  Kwang-Wook Lee

IPC分类号： G03F7/26 ,  G03F7/30

CPC分类号： G03F7/091 ,  G03F7/40 ,  G03F7/42

摘要： In a method of reworking a substrate, an organic anti-reflection coating (ARC) layer is formed on the substrate having an amorphous carbon pattern. A photoresist pattern is formed on the organic ARC layer. The photoresist pattern is entirely exposed when the photoresist pattern has a selected level of defects, and then the photoresist pattern is removed by a developing process. The substrate may be reworked without damaging the organic ARC layer, and the amorphous carbon pattern may include an alignment key and/or an overlay key.

摘要翻译： 在对衬底进行再加工的方法中，在具有无定形碳图案的衬底上形成有机抗反射涂层（ARC）层。 在有机ARC层上形成光刻胶图形。 当光致抗蚀剂图案具有选定的缺陷水平时，光致抗蚀剂图案完全曝光，然后通过显影过程去除光致抗蚀剂图案。 可以对衬底进行再加工而不损坏有机ARC层，并且非晶碳图案可以包括对准键和/或覆盖键。

公开(公告)号：US20060287208A1

公开(公告)日：2006-12-21

申请号：US11467736

申请日：2006-08-28

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Chang-Lyong Song ,  Yong-Sun Ko ,  Kui-Jong Baek ,  Woong Han

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Chang-Lyong Song ,  Yong-Sun Ko ,  Kui-Jong Baek ,  Woong Han

IPC分类号： C11D7/32

CPC分类号： H01L21/02071 ,  C11D3/0084 ,  C11D7/3281 ,  C11D11/0047 ,  C23G1/106

摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.

摘要翻译： 用于半导体晶片处理的腐蚀抑制清洁组合物包括浓度在约0.5重量％至约5重量％范围内的浓度在约1重量％至约10重量％范围内的硫酸，氢气 浓度在约0.01重量％至约1重量％范围内的氟化物; 浓度在约0.1重量％至约5重量％范围内的唑类和去离子水。 在清洁过程中，唑类用于通过与金属层的表面螯合来抑制被清洁的金属层的腐蚀。

公开(公告)号：US20080214006A1

公开(公告)日：2008-09-04

申请号：US12122264

申请日：2008-05-16

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

IPC分类号： H01L21/461 ,  G03C1/00

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D3/042 ,  C11D3/046 ,  C11D3/2082 ,  C11D3/30 ,  C11D3/364 ,  C11D3/39 ,  C11D3/3947 ,  C11D11/0047 ,  C23G1/106

摘要： Provided herein are methods for using corrosion-inhibiting cleaning compositions for semiconductor wafer processing that include an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.

摘要翻译： 本文提供了使用用于半导体晶片加工的腐蚀抑制清洁组合物的方法，其包括至少水，表面活性剂和选自氨基膦酸盐，多胺和多元羧酸的腐蚀抑制化合物的水性混合物。 混合物中腐蚀抑制化合物的量优选在约0.0001重量％至约0.1重量％的范围内，表面活性剂的量优选在约0.001重量％至约1.0重量％的范围内。 水性混合物还可以包括作为氧化物蚀刻剂的硫酸和氟化物，以及充当金属蚀刻剂的过氧化物。

公开(公告)号：US06889447B2

公开(公告)日：2005-05-10

申请号：US10464639

申请日：2003-06-19

申请人： Kwang-Wook Lee ,  Yong-Sun Ko ,  In-Seak Hwang

发明人： Kwang-Wook Lee ,  Yong-Sun Ko ,  In-Seak Hwang

IPC分类号： H01L21/304 ,  H01L21/00 ,  F26B5/04

CPC分类号： H01L21/67034

摘要： An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.

摘要翻译： 用于物体（例如晶片）的瞬时减压加热和干燥装置包括减压室; 用于将减压室中的压力降低至大气压的真空泵; 安装在所述减压室内的用于干燥装载在所述干燥室中的物体的干燥室; 安装在所述干燥室的壁中的压力调节阀，其中当所述压力调节阀打开时，所述干燥室中的压力立即降低到所述减压室的压力; 以及用于加热干燥室的加热装置。 在操作中，真空泵将减压室的压力降低至低于大气压，并且安装在干燥室的壁中的调压阀打开，从而瞬间将干燥室的压力降低到减压室的减压 。

公开(公告)号：US08604550B2

公开(公告)日：2013-12-10

申请号：US13097409

申请日：2011-04-29

申请人： Kwang-Wook Lee ,  Jae-Jik Baek ,  In-Seak Hwang ,  Seok-Woo Nam

发明人： Kwang-Wook Lee ,  Jae-Jik Baek ,  In-Seak Hwang ,  Seok-Woo Nam

IPC分类号： H01L29/772

CPC分类号： H01L29/66545 ,  H01L29/165 ,  H01L29/66621 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor device includes a semiconductor substrate having at least two oblique side surfaces and a first bottom surface in a recessed portion. A gate insulating layer is formed on the recessed portion. A gate electrode is formed on the gate insulating layer. A channel region is formed below the gate electrode. Gate spacers are formed on side surfaces of the gate electrode.

摘要翻译： 半导体器件包括具有至少两个倾斜侧表面和在凹陷部分中的第一底表面的半导体衬底。 在凹部上形成栅极绝缘层。 在栅极绝缘层上形成栅电极。 沟道区形成在栅电极的下方。 栅极间隔件形成在栅电极的侧表面上。

公开(公告)号：US07361547B2

公开(公告)日：2008-04-22

申请号：US11024981

申请日：2004-12-30

申请人： Kwang Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Ki-Hyun Hwang

发明人： Kwang Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Ki-Hyun Hwang

IPC分类号： H01L21/8242

CPC分类号： H01L28/84 ,  H01L27/10852 ,  H01L28/91

摘要： A method for forming a capacitor for use in a semiconductor device having electrode plugs surrounded by an insulating film and connected to underlying contact pads, includes sequentially forming an etch stop film and a mold oxide film on the insulating film and the electrode plugs, forming recesses in portions of the mold oxide film and the etching stopper film, the recesses exposing the electrode plugs, forming storage node electrodes in the recesses, filling the recesses in which the storage node electrodes are formed with an artificial oxide film, planarizing the storage node electrodes and the artificial oxide film so that the storage node electrodes are separated from one another, and selectively removing the mold oxide film and the artificial oxide film using a diluted hydrofluoric acid solution containing substantially no ammonium bifluoride.

摘要翻译： 一种用于形成用于半导体器件的电容器的方法，所述半导体器件具有由绝缘膜包围并连接到下面的接触焊盘的电极塞，包括在所述绝缘膜和所述电极插塞上顺序地形成蚀刻停止膜和模制氧化物膜， 在模具氧化膜和蚀刻停止膜的部分中，露出电极塞的凹部，在凹部中形成存储节点电极，用存储节点电极填充形成有人造氧化膜的凹部，使存储节点电极平坦化 和人造氧化物膜，使得储存节点电极彼此分离，并且使用基本上不含氟化二氢铵的稀释的氢氟酸溶液选择性地除去模制氧化物膜和人造氧化物膜。

公开(公告)号：US20050176604A1

公开(公告)日：2005-08-11

申请号：US11021040

申请日：2004-12-23

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

IPC分类号： C11D1/722 ,  C09K13/04 ,  C09K13/08 ,  C11D1/00 ,  C11D3/02 ,  C11D3/04 ,  C11D3/20 ,  C11D3/30 ,  C11D3/36 ,  C11D3/39 ,  C11D11/00 ,  C11D17/08 ,  C23G5/036 ,  H01L21/02 ,  H01L21/28 ,  H01L21/30 ,  H01L21/302 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/82 ,  H01L21/8239 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D3/042 ,  C11D3/046 ,  C11D3/2082 ,  C11D3/30 ,  C11D3/364 ,  C11D3/39 ,  C11D3/3947 ,  C11D11/0047 ,  C23G1/106

摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.

摘要翻译： 用于半导体晶片处理的腐蚀抑制清洁组合物包括至少水，表面活性剂和选自氨基膦酸盐，多胺和多元羧酸的腐蚀抑制化合物的水性混合物。 混合物中腐蚀抑制化合物的量优选在约0.0001重量％至约0.1重量％的范围内，表面活性剂的量优选在约0.001重量％至约1.0重量％的范围内。 水性混合物还可以包括作为氧化物蚀刻剂的硫酸和氟化物，以及充当金属蚀刻剂的过氧化物。

公开(公告)号：US20110284968A1

公开(公告)日：2011-11-24

申请号：US13097409

申请日：2011-04-29

申请人： Kwang-Wook Lee ,  Jae-Jik Baek ,  In-Seak Hwang ,  Seok-Woo Nam

发明人： Kwang-Wook Lee ,  Jae-Jik Baek ,  In-Seak Hwang ,  Seok-Woo Nam

IPC分类号： H01L29/772

CPC分类号： H01L29/66545 ,  H01L29/165 ,  H01L29/66621 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor device includes a semiconductor substrate having a top surface and a recessed portion including at least two oblique side surfaces and a first bottom surface therebetween, a gate insulating layer formed on the recessed portion, a gate electrode formed on the gate insulating layer, a channel region below the gate electrode in the semiconductor substrate, and gate spacers formed on side surfaces of the gate electrode, wherein both the bottom surface and the side surfaces of the recessed portion include flat surfaces. A method of manufacturing a semiconductor device comprising the steps of forming a recess portion including at least two oblique side surfaces and a bottom surface therebetween in a semiconductor substrate, forming a gate insulating layer formed on the recessed portion, forming a gate electrode formed on the gate insulating layer, forming a channel region below the gate electrode in the semiconductor substrate, and forming gate spacers formed on side surfaces of the gate electrode.

摘要翻译： 半导体器件包括具有顶表面和凹部的半导体衬底，该凹部包括至少两个倾斜侧表面和其间的第一底表面，形成在凹陷部分上的栅极绝缘层，形成在栅极绝缘层上的栅电极， 半导体衬底中的栅电极下方的沟道区域和形成在栅电极的侧表面上的栅极间隔，其中凹部的底表面和侧表面均包括平坦表面。 一种制造半导体器件的方法，包括以下步骤：在半导体衬底中形成包括至少两个倾斜侧表面和底表面的凹部，形成在所述凹部上形成的栅极绝缘层，形成在所述凹部上形成的栅电极 栅极绝缘层，在半导体衬底中的栅电极下方形成沟道区，以及形成在栅电极的侧表面上的栅极间隔。

公开(公告)号：US20050261151A1

公开(公告)日：2005-11-24

申请号：US11030258

申请日：2005-01-06

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Chang-Lyong Song ,  Yong-Sun Ko ,  Kui-Jong Baek ,  Woong Han

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Chang-Lyong Song ,  Yong-Sun Ko ,  Kui-Jong Baek ,  Woong Han

IPC分类号： C11D7/08 ,  C11D1/00 ,  C11D3/02 ,  C11D7/10 ,  C11D7/18 ,  C11D7/32 ,  C11D7/34 ,  C11D7/36 ,  C11D11/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768

CPC分类号： H01L21/02071 ,  C11D3/0084 ,  C11D7/3281 ,  C11D11/0047 ,  C23G1/106

摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.

摘要翻译： 用于半导体晶片处理的腐蚀抑制清洁组合物包括浓度在约0.5重量％至约5重量％范围内的浓度在约1重量％至约10重量％范围内的硫酸，氢气 浓度在约0.01重量％至约1重量％范围内的氟化物; 浓度在约0.1重量％至约5重量％范围内的唑类和去离子水。 在清洁过程中，唑类用于通过与金属层的表面螯合来抑制被清洁的金属层的腐蚀。

公开(公告)号：US20050139233A1

公开(公告)日：2005-06-30

申请号：US11070645

申请日：2005-03-02

申请人： Kwang-Wook Lee ,  Dae-Hyuk Chung ,  In-Seak Hwang ,  Yong-Sun Ko

发明人： Kwang-Wook Lee ,  Dae-Hyuk Chung ,  In-Seak Hwang ,  Yong-Sun Ko

IPC分类号： H01L21/304 ,  C09D9/00 ,  C11D3/39 ,  C11D7/08 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  C23G1/02 ,  H01L21/302 ,  H01L21/461 ,  H01L21/4763

CPC分类号： H01L21/02071 ,  C09D9/00 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/5018 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31133

摘要： In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

摘要翻译： 在清洁溶液和清洁半导体衬底的方法中，清洁溶液包括约1至约10重量％的硫酸，约0.5至约5重量％的过氧化氢水溶液和约85至约98.5重量％ 的氢氟酸溶液。 通过将基板浸入清洁溶液中，除去附着在形成在基板上的金属布线的各种聚合物。 冲洗衬底以除去留在衬底上的清洁溶液。 因此，可以完全去除聚合物而不损坏金属布线和下面的氧化膜。