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1.发明申请公开(公告)号：US20140197426A1
公开(公告)日：2014-07-17
申请号：US13856872
申请日：2013-04-04
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Fu-Shin Chen , Li-Cheng Yang , Yu-Chun Lee
IPC: H01L27/15
Abstract: A light emitting diode chip structure includes a substrate, a mesa type light emitting diode structure, and an electroluminescent layer. The mesa type light emitting diode structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The mesa type light emitting diode structure is formed on the substrate. The first semiconductor layer is formed on the substrate. The light emitting layer is formed on a portion of the first semiconductor layer, and a portion of the first semiconductor layer is uncovered. The second semiconductor layer is formed on the light emitting layer. The electroluminescent layer is formed on the second semiconductor layer. Furthermore, a light emitting diode element is also disclosed herein.
Abstract translation: 发光二极管芯片结构包括基板，台面型发光二极管结构和电致发光层。 台面型发光二极管结构包括第一半导体层，发光层和第二半导体层。 在基板上形成台面型发光二极管结构。 第一半导体层形成在基板上。 发光层形成在第一半导体层的一部分上，第一半导体层的一部分未被覆盖。 第二半导体层形成在发光层上。 电致发光层形成在第二半导体层上。 此外，本文还公开了发光二极管元件。
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2.发明授权Heat sink for electrical elements and light-emitting device containing thereof 有权用于电气元件的散热器和包含其的发光装置公开(公告)号：US09447959B2
公开(公告)日：2016-09-20
申请号：US14290971
申请日：2014-05-29
Applicant: Lextar Electronics Corporation
Inventor： Li-Cheng Yang , Yu-Chun Lee , Cheng-Ta Kuo
IPC: F21V29/00 , F21V29/85 , F21V29/83 , H01L23/467 , H01L33/64 , F21Y101/02
CPC classification number: F21V29/85 , F21V29/83 , F21Y2101/00 , F21Y2115/10 , H01L23/467 , H01L33/648 , H01L2924/0002 , H01L2924/00
Abstract: The disclosure provides a heat sink for electrical elements and a light-emitting device containing thereof. The heat sink includes a radiating substrate and at least one hollow radiating channel. In which, the hollow radiating channel is horizontally embedded in the radiating substrate, and has two openings disposed on the same site or the opposite sites of the radiating substrate, so that gas may flow in the hollow radiating channel and remove heat of the radiating substrate. And a light-emitting device containing the heat sink is also provided.
Abstract translation: 本公开提供了用于电气元件的散热器和包含其的发光装置。 散热器包括辐射基板和至少一个中空辐射通道。 其中，中空辐射通道水平嵌入辐射基板，并且具有设置在辐射基板的相同位置或相对位置上的两个开口，使得气体可以在中空辐射通道中流动并且去除辐射基板的热量 。 还提供了包含散热器的发光装置。
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公开(公告)号：US09966505B2
公开(公告)日：2018-05-08
申请号：US14887451
申请日：2015-10-20
Applicant: Lextar Electronics Corporation
Inventor： Ching-Yi Chen , Hung-Chun Tong , Li-Cheng Yang , Wen-Wan Tai , Yu-Chun Lee , Tzong-Liang Tsai
CPC classification number: H01L33/504 , G02B6/0003 , G02B6/0035 , G02B6/0073
Abstract: The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material layer. The blue light source has a light emitting surface. The first fluorescent material layer covers the light emitting surface of the blue light source. The first fluorescent material layer consists of a first fluorescent material. An excitation band of the first fluorescent material is in a blue wave band, and an emission band of the first fluorescent material is in a green wave band. The second fluorescent material layer covers the first fluorescent material layer. The second fluorescent material layer consists of a second fluorescent material. An excitation band of the second fluorescent material is in a green wave band, and an emission band of the second fluorescent material is in a red wave band. A light device and a backlight module are also provided herein.
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Patent Agency Ranking
公开(公告)号：US09065027B2
公开(公告)日：2015-06-23
申请号：US14149051
申请日：2014-01-07
Applicant: Lextar Electronics Corporation
Inventor： Li-Cheng Yang , Yu-Chun Lee
CPC classification number: H01L33/58 , G02F1/15 , G02F1/157 , G02F2001/1515 , G02F2202/04 , H01L33/44 , H01L33/50 , H01L2224/48091 , H01L2924/00014
Abstract: A LED package structure includes a base portion, a light-emitting chip, a cup portion and an encapsulating glue. The base portion has an upper surface and a lower surface. The upper surface has a die-bonding area. The light-emitting chip emits a light with a first wavelength and is located on the die-bonding area. The cup portion is located on the base portion to surround the die-bonding area to form a recess having an opening. The encapsulating glue is filled into the recess. The encapsulating glue has a wavelength conversion material configured to convert part of the light with the first wavelength into a light with a second wavelength. The cup portion includes an electro chromic layer electrically connected to a first external power and a transmittance of the electro chromic layer is changed in accordance with an input voltage of the first external power to adjust the light-emitting profile of the light-emitting chip.
Abstract translation: LED封装结构包括基部，发光芯片，杯部和封装胶。 基部具有上表面和下表面。 上表面具有芯片接合区域。 发光芯片发射具有第一波长的光并且位于芯片接合区域上。 杯部位于基部上以包围芯片接合区域以形成具有开口的凹部。 封装胶被填充到凹槽中。 封装胶具有被配置为将具有第一波长的光的一部分转换成具有第二波长的光的波长转换材料。 杯部包括电连接到第一外部电源的电致铬层，并且根据第一外部电源的输入电压改变电致发光层的透射率，以调节发光芯片的发光轮廓。
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公开(公告)号：US09230945B2
公开(公告)日：2016-01-05
申请号：US14020994
申请日：2013-09-09
Applicant: Lextar Electronics Corporation
Inventor： Li-Cheng Yang
IPC: H05B41/392 , H01L25/16 , H01L23/00
CPC classification number: H01L25/167 , H01L24/97 , H01L2224/48091 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate and a light-emitting element. The substrate comprises a first variable resistor, a second variable resistor, an insulation portion and a carrier. The insulation portion is located between the first variable resistor and the second variable resistor. The carrier is surrounded by the insulation portion, and the light-emitting element is disposed on the carrier. The first variable resistor, the second variable resistor and the insulation portion respectively penetrate the substrate.
Abstract translation: 提供了一种发光装置。 发光装置包括基板和发光元件。 基板包括第一可变电阻器，第二可变电阻器，绝缘部分和载体。 绝缘部分位于第一可变电阻器和第二可变电阻器之间。 载体被绝缘部包围，并且发光元件设置在载体上。 第一可变电阻器，第二可变电阻器和绝缘部分分别穿透基板。
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公开(公告)号：US20140139144A1
公开(公告)日：2014-05-22
申请号：US14020994
申请日：2013-09-09
Applicant: Lextar Electronics Corporation
Inventor： Li-Cheng Yang
IPC: H05B37/00
CPC classification number: H01L25/167 , H01L24/97 , H01L2224/48091 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate and a light-emitting element. The substrate comprises a first variable resistor, a second variable resistor, an insulation portion and a carrier. The insulation portion is located between the first variable resistor and the second variable resistor. The carrier is surrounded by the insulation portion, and the light-emitting element is disposed on the carrier. The first variable resistor, the second variable resistor and the insulation portion respectively penetrate the substrate.
Abstract translation: 提供了一种发光装置。 发光装置包括基板和发光元件。 基板包括第一可变电阻器，第二可变电阻器，绝缘部分和载体。 绝缘部分位于第一可变电阻器和第二可变电阻器之间。 载体被绝缘部包围，并且发光元件设置在载体上。 第一可变电阻器，第二可变电阻器和绝缘部分分别穿透基板。
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公开(公告)号：US11018182B2
公开(公告)日：2021-05-25
申请号：US16171334
申请日：2018-10-25
Applicant: Lextar Electronics Corporation
Inventor： Yi-Jyun Chen , Li-Cheng Yang , Yu-Chun Lee , Shiou-Yi Kuo , Chih-Hao Lin
Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.
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公开(公告)号：US20160365491A1
公开(公告)日：2016-12-15
申请号：US14887451
申请日：2015-10-20
Applicant: Lextar Electronics Corporation
Inventor： Ching-Yi Chen , Hung-Chun Tong , Li-Cheng Yang , Wen-Wan Tai , Yu-Chun Lee , Tzong-Liang Tsai
CPC classification number: H01L33/504 , G02B6/0003 , G02B6/0035 , G02B6/0073
Abstract: The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material layer. The blue light source has a light emitting surface. The first fluorescent material layer covers the light emitting surface of the blue light source. The first fluorescent material layer consists of a first fluorescent material. An excitation band of the first fluorescent material is in a blue wave band, and an emission band of the first fluorescent material is in a green wave band. The second fluorescent material layer covers the first fluorescent material layer. The second fluorescent material layer consists of a second fluorescent material. An excitation band of the second fluorescent material is in a green wave band, and an emission band of the second fluorescent material is in a red wave band. A light device and a backlight module are also provided herein.
Abstract translation: 本公开提供了包括蓝色光源，第一荧光材料层和第二荧光材料层的发光结构。 蓝色光源具有发光面。 第一荧光体层覆盖蓝色光源的发光面。 第一荧光材料层由第一荧光材料构成。 第一荧光体的激发带为蓝色波段，第一荧光体的发光带为绿色波段。 第二荧光材料层覆盖第一荧光材料层。 第二荧光材料层由第二荧光材料构成。 第二荧光体的激发带为绿色波段，第二荧光体的发光带为红色波段。 本文还提供了一种灯装置和背光模块。
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