公开(公告)号：US20180151606A1

公开(公告)日：2018-05-31

申请号：US15824974

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  HongRak CHOI ,  PilSang YUN ,  HyungJoon KOO ,  Kwanghwan JI ,  Jaeyoon PARK

IPC: H01L27/12 ,  H01L51/56 ,  H01L27/32 ,  H01L29/49

CPC classification number: H01L27/1288 ,  H01L27/0733 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/78696 ,  H01L51/56 ,  H01L2924/1426

Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.

公开(公告)号：US20180190798A1

公开(公告)日：2018-07-05

申请号：US15858065

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  SeHee PARK ,  HyungJoon KOO ,  Kwanghwan JI ,  PilSang YUN

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.

公开(公告)号：US20180190683A1

公开(公告)日：2018-07-05

申请号：US15855053

申请日：2017-12-27

Applicant: LG Display Co., Ltd.

Inventor： HyungJoon KOO

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1251 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02244 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/127 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor and a method for manufacturing the same, and a display device including the same are disclosed, in which a P type semiconductor characteristic is realized using an active layer that includes a Sn based oxide. The thin film transistor comprises an active layer that includes an Sn(II)O based oxide; a metal oxide layer being in contact with one surface of the active layer; a gate electrode overlapped with the active layer; a gate insulating film provided between the gate electrode and the active layer; a source electrode being in contact with a first side of the active layer; and a drain electrode being in contact with a second side of the active layer.