公开(公告)号：US20160315068A1

公开(公告)日：2016-10-27

申请号：US14841032

申请日：2015-08-31

Applicant: LG ELECTRONICS INC.

Inventor： Eunah LEE ,  Mingu KANG

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/50 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L25/0753 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/95 ,  H01L2933/0025

Abstract: A semiconductor light emitting device including a first conductivity type semiconductor layer; a first conductivity type electrode disposed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer overlapping the first conductivity type semiconductor layer; a second conductivity type electrode disposed on the second conductivity type semiconductor layer; and a passivation layer including a plurality of layers having different refractive indices covering side surfaces of the first and second conductivity type semiconductor layers to reflect light emitted to side surfaces of the semiconductor light emitting device.

Abstract translation: 一种半导体发光器件，包括第一导电类型半导体层; 设置在所述第一导电型半导体层上的第一导电型电极; 与第一导电类型半导体层重叠的第二导电类型半导体层; 设置在所述第二导电类型半导体层上的第二导电类型电极; 以及钝化层，包括具有覆盖第一和第二导电类型半导体层的侧表面的不同折射率的多个层，以反射发射到半导体发光器件的侧表面的光。

公开(公告)号：US20180138235A1

公开(公告)日：2018-05-17

申请号：US15576186

申请日：2015-09-02

Applicant: LG ELECTRONICS INC.

Inventor： Eunah LEE

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/36 ,  H01L33/00

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/36 ,  H01L33/385 ,  H01L33/62 ,  H01L2933/0016 ,  Y02B20/48

Abstract: The present invention relates to a display device and, particularly, to a display device using semiconductor light-emitting diodes. In the display device according to the present invention, at least one of the semiconductor light-emitting diodes comprises: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping with the first conductive semiconductor layer in a vertical direction, and having the second conductive electrode arranged thereon; and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein a connecting unit electrically connected to the first conductive electrode is formed on one surface of the first conductive semiconductor layer, and the connecting unit is arranged so as to lean to one side on the basis of the second conductive electrode along the horizontal direction.

公开(公告)号：US20160126224A1

公开(公告)日：2016-05-05

申请号：US14693633

申请日：2015-04-22

Applicant: LG ELECTRONICS INC.

Inventor： Eunah LEE ,  Mingu KANG

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/38 ,  H01L25/00

CPC classification number: H01L25/0753 ,  H01L25/50 ,  H01L33/005 ,  H01L33/38 ,  H01L33/385 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A display device includes a first electrode; a second electrode; and a plurality of semiconductor light emitting devices coupled to a conductive adhesive layer, and electrically connected to the first electrode and the second electrode, wherein at least one of the plurality of semiconductor light emitting devices includes: a first conductive electrode and a second conductive electrode spaced from each other; a protruding unit extending from the second conductive electrode, and protruding from a side surface of at least one of the plurality of semiconductor light emitting devices; and a protection unit configured to cover at least part of the protruding unit for protection of the protruding unit.

Abstract translation: 显示装置包括第一电极; 第二电极; 以及耦合到导电粘合剂层并且电连接到第一电极和第二电极的多个半导体发光器件，其中多个半导体发光器件中的至少一个包括：第一导电电极和第二导电电极 彼此间隔; 从所述第二导电电极延伸并从所述多个半导体发光器件中的至少一个的侧面突出的突出单元; 以及保护单元，被配置为覆盖所述突出单元的至少一部分以保护所述突出单元。

公开(公告)号：US20220310879A1

公开(公告)日：2022-09-29

申请号：US17616845

申请日：2019-06-20

Applicant: LG ELECTRONICS INC.

Inventor： Eunah LEE

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/10 ,  H01L33/00

Abstract: A light-emitting device using a micrometer-sized semiconductor light-emitting element can include a substrate including a plurality of individual device areas; a semiconductor structure located in each of the plurality of individual device areas, in which the semiconductor structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer of the semiconductor structure; a second electrode electrically connected to the second conductive semiconductor layer of the semiconductor structure; and a light extraction structure located in a gap area located outside of the device area on the substrate.

公开(公告)号：US20180315893A1

公开(公告)日：2018-11-01

申请号：US15499049

申请日：2017-04-27

Applicant: LG ELECTRONICS INC.

Inventor： Eunah LEE

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/50 ,  H01L33/32 ,  H01L33/06 ,  H01L25/075 ,  F21S8/10 ,  B60Q1/30 ,  B60Q1/44 ,  B60Q1/34 ,  B60Q1/22 ,  B60Q1/26

Abstract: Disclosed is a semiconductor light emitting device, wherein the semiconductor light emitting device includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode; a second conductive semiconductor layer overlapped with the first conductive semiconductor layer, and having the second conductive electrode; and a passivation layer formed to enclose the semiconductor light emitting device, wherein one surface of the first conductive semiconductor layer is divided into a first region where the first conductive electrode is disposed, and a second region covered by the passivation layer, and wherein the passivation layer is provided with a plurality of layers having different refractive indexes, such that light is reflected from the second region

公开(公告)号：US20170117257A1

公开(公告)日：2017-04-27

申请号：US15140339

申请日：2016-04-27

Applicant: LG ELECTRONICS INC.

Inventor： Eunah LEE ,  Sangwook BYUN ,  Hwankuk YUH

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/24 ,  H01L33/58 ,  H01L33/00 ,  H01L33/50 ,  H01L33/60 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L25/0753 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0066

Abstract: A display device including a substrate; a first electrode on the substrate; and a plurality of semiconductor light emitting devices disposed on the first electrode; and a second electrode. Further, at least one of the semiconductor light emitting devices includes a first conductive semiconductor layer; a second conductive semiconductor layer overlapping with the first conductive semiconductor layer; and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer. In addition, an upper surface of the second conductive layer includes a recess groove having a bottom portion and a lateral wall portion formed along an edge of the second conductive semiconductor layer, and the second electrode extends partially on the bottom portion of the groove and on the lateral wall portion.