Display device using semiconductor light-emitting diode

    公开(公告)号:US10720086B2

    公开(公告)日:2020-07-21

    申请号:US16129983

    申请日:2018-09-13

    Abstract: A display device including a plurality of vertical type semiconductor light-emitting diodes; a plurality of horizontal type semiconductor light-emitting diodes; a first wiring formed on a substrate and including a plurality of electrode lines, a first electrode line being connected with first conductive electrodes of the vertical type semiconductor light-emitting diodes and a second electrode line being connected with first conductive electrodes of the horizontal type semiconductor light-emitting diodes; a second wiring spaced apart from and crossing the first wiring and electrically connected with second conductive electrodes of the vertical type semiconductor light-emitting diodes; and a third wiring formed on the substrate, electrically connected with the second wiring, and connected with second conductive electrodes of the horizontal type semiconductor light-emitting diodes.

    Display device using semiconductor light emitting element

    公开(公告)号:US11949047B2

    公开(公告)日:2024-04-02

    申请号:US17738712

    申请日:2022-05-06

    Abstract: Discussed is a display device having a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements includes a first electrode and a second electrode spaced apart each other, a first conductivity type semiconductor layer disposed with the first electrode, a second conductivity type semiconductor layer configured to overlap with the first conductivity type semiconductor layer, and disposed with the second electrode, a first passivation layer covering outer surfaces of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a second passivation layer covering the first passivation layer, wherein at least one portion of the second electrode is overlapped with at least one portion of the first electrode along the thickness direction of the semiconductor light emitting element.

    Display device using semiconductor light emitting element and method for manufacturing same

    公开(公告)号:US10833229B2

    公开(公告)日:2020-11-10

    申请号:US16310022

    申请日:2017-03-07

    Abstract: The present invention relates to a display device and, particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises: a substrate at which a wire electrode is formed; a plurality of semiconductor light emitting elements electrically connected to the wire electrode; a plurality of fluorescent material layers for converting a wavelength of light; a wavelength converting layer which has a plurality of partition wall portions formed between the plurality of fluorescent material layers and is disposed to cover the plurality of semiconductor light emitting elements; and a color filter which has a plurality of filtering portions for filtering blue, green, and red colors, and is disposed to cover the wavelength converting layer, wherein at least one of the plurality of filtering portions is configured to have a width different from those of the other filtering portions.

    Display device using semiconductor light-emitting diodes

    公开(公告)号:US12154908B2

    公开(公告)日:2024-11-26

    申请号:US18043256

    申请日:2020-08-31

    Abstract: The present invention relates to a display device, using semiconductor light-emitting diodes, comprising: a wiring board which comprises a row line for providing a row signal, a column line for providing a column signal, a VCC line connected to a VCC input terminal, and a VDD line connected to a VDD input terminal; and an interposer which is provided on the wiring board, has pixels, comprising semiconductor light-emitting diodes, along a plurality of rows and columns, and comprises IC chips for controlling the pixel light emission. The interposer comprises: a first terminal connected to the row line and for transmitting the row signal to the IC chips; a second terminal connected to the column line and for transmitting the column signal to the IC chips; a third terminal connected to the VCC line and connecting the VCC input terminal and the IC chips; and a fourth terminal connected to the VDD line and connecting the VDD input terminal and the IC chips.

    Display device using micro LED, and method for manufacturing same

    公开(公告)号:US12289934B2

    公开(公告)日:2025-04-29

    申请号:US17619162

    申请日:2019-06-21

    Inventor: Hwanjoon Choi

    Abstract: A semiconductor light emitting element for a display device can include a semiconductor light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a light extraction structure disposed on top of the second conductivity type semiconductor layer of the semiconductor light emitting structure, in which the light extraction structure includes a plurality of organic protrusions protruding in a vertical direction of the second conductivity type semiconductor layer; and a surface roughness pattern formed on at least a portion of a top surface of the second conductivity type semiconductor layer, and at least one of the plurality of organic protrusions contains nanoparticles positioned at an end of the at least one of the plurality of organic protrusions and an organic component supporting the nanoparticles.

    Display device using semiconductor light emitting element

    公开(公告)号:US11355673B2

    公开(公告)日:2022-06-07

    申请号:US16465051

    申请日:2017-01-31

    Abstract: The present invention relates to a display device and, particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements comprises: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer in which the first conductive electrode is disposed; a second conductive semiconductor layer which overlaps the first conductive semiconductor layer and in which the second conductive electrode is disposed; a first passivation layer formed to cover outer surfaces of the first conductive semiconductor layer and the second conductive semiconductor layer; and a second passivation layer formed to cover the first passivation layer and formed such that at least a portion thereof varies in thickness.

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