公开(公告)号：US20230139586A1

公开(公告)日：2023-05-04

申请号：US17912308

申请日：2020-03-18

Applicant: LG ELECTRONICS INC.

Inventor： Jinwoo SUNG ,  Jonghyun RHO

IPC: H01L31/108 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: Discussed is a photodiode and a method for manufacturing the photodiode. The photodiode can include a semiconductor substrate, an insulating layer on the semiconductor substrate, an electrode on the insulating layer; and a graphene layer on the semiconductor substrate, the insulating layer, and the electrode, wherein the insulating layer can include an ion gel.

公开(公告)号：US20140239310A1

公开(公告)日：2014-08-28

申请号：US14184146

申请日：2014-02-19

Applicant: LG ELECTRONICS INC.

Inventor： Jonghyun RHO ,  Minseok CHOI ,  Taehyeong KIM

IPC: H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L21/02425 ,  H01L21/0243 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16

Abstract: Disclosed is a method of manufacturing a light emitting device. More particularly, disclosed are a growth substrate, a nitride semiconductor device and a method of manufacturing a light emitting device. The method includes preparing a growth substrate including a metal substrate, forming a semiconductor structure including a nitride-based semiconductor on the growth substrate, providing a support structure on the semiconductor structure, and separating the growth substrate from the semiconductor structure.

Abstract translation: 公开了一种制造发光器件的方法。 更具体地，公开了生长衬底，氮化物半导体器件和制造发光器件的方法。 该方法包括制备包括金属基板的生长衬底，在生长衬底上形成包括氮化物基半导体的半导体结构，在半导体结构上提供支撑结构，并将生长衬底与半导体结构分离。

公开(公告)号：US20150368109A1

公开(公告)日：2015-12-24

申请号：US14423463

申请日：2013-08-01

Applicant: LG ELECTRONICS INC.

Inventor： Jinsan MOON ,  Jonghyun RHO ,  Subeom PARK ,  Taehyeong KIM ,  Byunghee HONG ,  Wonbae PARK ,  Myunghee JUNG

IPC: C01B31/04 ,  C23C16/455 ,  C23C16/26

CPC classification number: C01B32/186 ,  C23C16/0209 ,  C23C16/26 ,  C23C16/44

Abstract: The present invention provides a method for manufacturing graphene, said graphene, and an apparatus for manufacturing same. The method for manufacturing graphene comprises the steps of: loading a catalytic metal layer into a chamber; applying tensile force to the catalytic metal layer; and forming graphene on the catalytic metal layer by supplying a carbon source into the chamber while the tension is applied to the catalytic metal layer. Therefore, the size of the grains on the catalytic metal layer can be increased by applying tension to the catalytic metal layer, and high quality uniform graphene can be grown through the use of the catalytic metal layer.

Abstract translation: 本发明提供一种石墨烯的制造方法，所述石墨烯及其制造装置。 制造石墨烯的方法包括以下步骤：将催化金属层装入室中; 对催化金属层施加张力; 以及通过在向所述催化金属层施加张力的同时向所述室中供应碳源而在所述催化金属层上形成石墨烯。 因此，可以通过向催化金属层施加张力来增加催化金属层上的颗粒的尺寸，并且可以通过使用催化金属层生长高质量均匀的石墨烯。

公开(公告)号：US20130309458A1

公开(公告)日：2013-11-21

申请号：US13749369

申请日：2013-01-24

Applicant: LG ELECTRONICS INC.

Inventor： Jinsan MOON ,  Wonbae PARK ,  Mynghee JUNG ,  Jonghyun RHO ,  Byunghwa SEO

IPC: C01B31/04 ,  C01B31/00

CPC classification number: C01B31/0446 ,  C01B32/184 ,  C01B32/186 ,  C01B32/194 ,  H01L21/187 ,  Y10T428/24802

Abstract: A method for manufacturing graphene using light capable of transferring and patterning graphene, and graphene manufactured using the method are disclosed. The method includes forming a graphene layer on a catalyst metal layer, attaching a support layer losing adhesion by light on the graphene layer, removing the catalyst metal layer, disposing a substrate on the graphene layer, and separating the support layer from the graphene layer by irradiating light to the support layer.

Abstract translation: 公开了使用能够转移和图案化石墨烯的光制造石墨烯的方法，以及使用该方法制造的石墨烯。 该方法包括：在催化剂金属层上形成石墨烯层，在石墨烯层上附着一层失去光的粘附性的载体层，除去催化剂金属层，在石墨烯层上设置基材，以及将载体层与石墨烯层分离， 向支撑层照射光。