公开(公告)号：US20180013020A1

公开(公告)日：2018-01-11

申请号：US15544170

申请日：2015-09-30

Applicant: LG ELECTRONICS INC. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Minseok CHOI ,  Changgu LEE ,  Hunyoung BARK ,  Jinhwan LEE

IPC: H01L31/0224 ,  H01L31/0392 ,  H01L31/0236 ,  C01B17/42 ,  C01G33/00 ,  C01G39/06

CPC classification number: H01L31/022466 ,  C01B17/42 ,  C01G33/00 ,  C01G39/06 ,  C01P2002/50 ,  C01P2002/52 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/0324 ,  H01L31/0392 ,  Y02E10/50

Abstract: The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a production method therefor. The metal chalcogenide device according to the present invention may comprise: a substrate; an oxide layer positioned on the substrate; a first conductive metal chalcogenide layer positioned on the oxide layer; and first and second electrodes, which are positioned apart from one another on the metal chalcogenide layer and comprise metal chalcogenides.

公开(公告)号：US20170073809A1

公开(公告)日：2017-03-16

申请号：US15120238

申请日：2015-02-10

Applicant: LG ELECTRONICS INC. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Minseok CHOI ,  Changgu LEE ,  Youngchan KIM

IPC: C23C16/30 ,  C23C16/46

CPC classification number: C23C16/305 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/228 ,  C23C16/46

Abstract: The present invention relates to the manufacturing of a heteroelement thin film, and particularly to a method for manufacturing a metal chalcogenide thin film and the thin film manufactured thereby. The present invention, which relates to a method for manufacturing a metal chalcogenide thin film, may comprise the steps of: supplying a vaporized metal precursor; supplying a chalcogen-containing gas; and forming a thin film by reacting the metal precursor with the chalcogen-containing gas on a growth substrate at a first temperature condition.

Abstract translation: 本发明涉及异质元素薄膜的制造，特别涉及制造金属硫族化物薄膜的方法及其制造的薄膜。 涉及制造金属硫属元素化物薄膜的方法的本发明可以包括以下步骤：提供蒸发的金属前体; 供应含硫属原子气体; 以及通过在第一温度条件下在生长衬底上使金属前体与含硫属原子气体反应而形成薄膜。

公开(公告)号：US20140368107A1

公开(公告)日：2014-12-18

申请号：US14212771

申请日：2014-03-14

Applicant: LG ELECTRONICS INC.

Inventor： Mynghee JUNG ,  Minseok CHOI ,  Taehyeong KIM ,  Jinsan MOON

IPC: H05B33/04 ,  H05B33/10

CPC classification number: H05B33/04 ,  H01L51/5259 ,  H05B33/10

Abstract: Disclosed is a light emitting device. More specifically, disclosed are an organic electroluminescent device display and a method for manufacturing the same. The organic electroluminescent device display includes a substrate, an organic electroluminescent device disposed on the substrate, a sealing cap for sealing the organic electroluminescent device, and a getter disposed inside the sealing cap, the getter comprising a graphene layer.

Abstract translation: 公开了一种发光器件。 更具体地，公开了有机电致发光器件显示器及其制造方法。 有机电致发光器件显示器包括衬底，设置在衬底上的有机电致发光器件，用于密封有机电致发光器件的密封帽和设置在密封帽内部的吸气剂，吸气剂包括石墨烯层。

公开(公告)号：US20170051400A1

公开(公告)日：2017-02-23

申请号：US15308021

申请日：2015-04-22

Applicant: LG ELECTRONICS INC.

Inventor： Minseok CHOI ,  Jinsan MOON ,  Mynghee JUNG ,  Taehyeong KIM

IPC: C23C16/06 ,  H01L21/02 ,  C23C16/44

CPC classification number: C23C16/06 ,  C23C16/305 ,  C23C16/44 ,  C23C16/448 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631

Abstract: The present invention relates to the manufacture of a hetero-element thin film and, particularly, to a method for manufacturing a doped metal chalcogenide thin film and the same thin film. The method for manufacturing a metal chalcogenide thin film of the present invention may comprise the steps of: supplying a first metal precursor that is gasified; supplying a second metal precursor that is gasified; supplying a chalcogen-containing gas; and reacting the first metal precursor, the second metal precursor, and the chalcogen-containing gas on a growing substrate at a first temperature condition to form a thin film.

Abstract translation: 本发明涉及异质元件薄膜的制造，特别涉及制造掺杂金属硫族化物薄膜和相同薄膜的方法。 本发明的金属硫族化物薄膜的制造方法可以包括以下步骤：供给被气化的第一金属前体; 供应气化的第二金属前体; 供应含硫属原子气体; 以及在第一温度条件下使生长的衬底上的第一金属前体，第二金属前体和含硫属化物的气体反应以形成薄膜。

公开(公告)号：US20160031712A1

公开(公告)日：2016-02-04

申请号：US14777164

申请日：2014-04-28

Applicant: LG ELECTRONICS INC.

Inventor： Jinsan MOON ,  Minseok CHOI ,  Mynghee JUNG

IPC: C01B31/04 ,  C23C16/26

CPC classification number: C23C16/26 ,  B01J19/18 ,  C01B32/186 ,  C23C16/545

Abstract: An apparatus for manufacturing high quality graphene, a method for manufacturing the same and graphene manufactured by the method are disclosed. The apparatus for manufacturing graphene includes a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source under a second condition, a connector for connecting the first chamber to the second chamber, and a feeder for continuously supplying a catalyst metal to the first chamber and the second chamber.

Abstract translation: 公开了一种用于制造高品质石墨烯的设备，其制造方法和通过该方法制造的石墨烯。 用于制造石墨烯的装置包括用于在第一状态下供应碳源的第一室，用于在第二状态下供应碳源的第二室，用于将第一室连接到第二室的连接器和用于连续供应 催化剂金属到第一室和第二室。

公开(公告)号：US20140239310A1

公开(公告)日：2014-08-28

申请号：US14184146

申请日：2014-02-19

Applicant: LG ELECTRONICS INC.

Inventor： Jonghyun RHO ,  Minseok CHOI ,  Taehyeong KIM

IPC: H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L21/02425 ,  H01L21/0243 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16

Abstract: Disclosed is a method of manufacturing a light emitting device. More particularly, disclosed are a growth substrate, a nitride semiconductor device and a method of manufacturing a light emitting device. The method includes preparing a growth substrate including a metal substrate, forming a semiconductor structure including a nitride-based semiconductor on the growth substrate, providing a support structure on the semiconductor structure, and separating the growth substrate from the semiconductor structure.

Abstract translation: 公开了一种制造发光器件的方法。 更具体地，公开了生长衬底，氮化物半导体器件和制造发光器件的方法。 该方法包括制备包括金属基板的生长衬底，在生长衬底上形成包括氮化物基半导体的半导体结构，在半导体结构上提供支撑结构，并将生长衬底与半导体结构分离。

公开(公告)号：US20190296172A1

公开(公告)日：2019-09-26

申请号：US16362000

申请日：2019-03-22

Applicant: LG ELECTRONICS INC.

Inventor： Woojoong KANG ,  Dongju KANG ,  Jangho KIM ,  Juseok KIM ,  Hyunjin KIM ,  Kwangkyu SONG ,  Yihwan JUNG ,  Yunhui CHO ,  Minseok CHOI ,  Hyeonbum JIN

IPC: H01L31/05 ,  H01L31/054

Abstract: An interconnecting member of a solar cell panel for connecting a plurality of solar cells, can include a core layer and a solder layer formed on a surface of the core layer, in which the core layer includes a protruding portion having a peak portion extending along a longitudinal direction of the core layer, and a reflection surface having an inclined surface or a rounded portion disposed at opposite sides of the peak portion, and a width of the protruding portion increases from the peak portion towards a center of the core layer.

公开(公告)号：US20190280132A1

公开(公告)日：2019-09-12

申请号：US16295392

申请日：2019-03-07

Applicant: LG ELECTRONICS INC.

Inventor： Woojoong KANG ,  Jangho KIM ,  Dongju KANG ,  Minseok CHOI ,  Kwangkyu SONG ,  Yihwan JUNG

IPC: H01L31/0216 ,  H01L31/05 ,  H01L31/02

Abstract: A flux coating device for a solar cell panel, can include a flux bath configured to receive flux and having an inlet and an outlet, in which the inlet and the outlet of the flux bath are configured to pass an interconnector below a surface of the flux, and the interconnector can include a wiring material including: a rounded portion or a circular cross-section, a core layer, and a solder layer formed on a surface of the core layer.

公开(公告)号：US20140370295A1

公开(公告)日：2014-12-18

申请号：US14201274

申请日：2014-03-07

Applicant: LG ELECTRONICS INC.

Inventor： Minseok CHOI ,  Taehyeong KIM ,  Jinsan MOON ,  Mynghee JUNG

IPC: H01B1/04 ,  H01B13/00

CPC classification number: C01B31/0446 ,  C01B32/184 ,  C01B32/186 ,  Y10T428/30

Abstract: Disclosed is graphene. More particularly, disclosed are a method for manufacturing graphene to grow graphene with high quality and graphene manufactured by the same. The method includes preparing a thermal-expansion compensation substrate, forming a metal layer on the thermal-expansion compensation substrate, and forming graphene on the metal layer.

Abstract translation: 披露的是石墨烯。 更具体地，公开了一种用于制造石墨烯以生产具有高品质的石墨烯和由其制造的石墨烯的方法。 该方法包括制备热膨胀补偿基板，在热膨胀补偿基板上形成金属层，并在金属层上形成石墨烯。