公开(公告)号：US20200350445A1

公开(公告)日：2020-11-05

申请号：US16933363

申请日：2020-07-20

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yundeok YOON ,  Jaesung KIM ,  Junyong AHN

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/068

Abstract: A method of manufacturing a solar cell, includes forming a rounded uneven member having a rounded end portion at a second surface of a semiconductor substrate having a first surface and the second surface opposite to each other, forming conductive regions comprising forming a first conductive region at the first surface of the semiconductor substrate and forming a second conductive region on the second surface of the semiconductor substrate, wherein the second conductive region comprises a semiconductor layer different and separated from the semiconductor substrate and forming electrodes comprising forming a first electrode electrically connected to the first conductive region and forming a second electrode electrically connected to the second conductive region.

公开(公告)号：US20180277694A1

公开(公告)日：2018-09-27

申请号：US15995701

申请日：2018-06-01

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

公开(公告)号：US20170005218A1

公开(公告)日：2017-01-05

申请号：US15196743

申请日：2016-06-29

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae CHANG ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0745 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0216

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

Abstract translation: 公开了一种太阳能电池，包括半导体衬底和设置在半导体衬底的一个表面上并具有不同于半导体衬底的晶体结构的掺杂剂层，掺杂剂层包括掺杂剂。 掺杂剂层包括在其厚度方向上彼此层叠的多个半导体层，以及插入其间的界面层。 界面层是具有比多个半导体层中的每一个更高的氧浓度的氧化物层。

公开(公告)号：US20140116506A1

公开(公告)日：2014-05-01

申请号：US14146501

申请日：2014-01-02

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Hyunjung PARK ,  Junyong AHN ,  Seongeun LEE ,  Jiweon JEONG

IPC: H01L31/0236 ,  H01L31/0216

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.

Abstract translation: 太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板上形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二 电极接触第二类型半导体。 在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸 的蚀刻剂。

公开(公告)号：US20220262967A1

公开(公告)日：2022-08-18

申请号：US17627541

申请日：2020-04-09

Applicant: LG ELECTRONICS INC.

Inventor： Sungjin KIM ,  Juhwa CHEONG ,  Hyungwook CHOI ,  Wonjae CHANG

IPC: H01L31/0368 ,  H01L31/0224 ,  H01L31/18

Abstract: A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.

公开(公告)号：US20190148573A1

公开(公告)日：2019-05-16

申请号：US16250463

申请日：2019-01-17

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0747

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

公开(公告)号：US20180226520A1

公开(公告)日：2018-08-09

申请号：US15889950

申请日：2018-02-06

Applicant: LG ELECTRONICS INC.

Inventor： Haejong CHO ,  Donghae OH ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/068 ,  C03C4/14 ,  C03C8/18 ,  C03C8/10

CPC classification number: H01L31/022425 ,  C03C4/14 ,  C03C8/10 ,  C03C8/18 ,  C03C2204/00 ,  C03C2205/00 ,  H01B1/16 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/50

Abstract: A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

公开(公告)号：US20170309761A1

公开(公告)日：2017-10-26

申请号：US15643180

申请日：2017-07-06

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0747 ,  H01L31/077

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.

公开(公告)号：US20220223748A1

公开(公告)日：2022-07-14

申请号：US17612023

申请日：2020-04-08

Applicant: LG ELECTRONICS INC.

Inventor： Kyungdong LEE ,  Jungmin HA ,  Youngsung YANG ,  Juhwa CHEONG

IPC: H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/048 ,  H01L31/05 ,  H01L31/18 ,  B23K1/00 ,  B23K35/02 ,  B23K35/26 ,  B23K35/36

Abstract: In a method for manufacturing a solar cell panel according to an embodiment of the present invention, a step of forming an electrode comprises the steps of: forming a main electrode part on a conductive region; and forming a connection electrode part on the main electrode part by using a paste comprising metal particles having a first metal, a solder material having a second metal different from the first metal, and an adhesive material.

公开(公告)号：US20180315866A1

公开(公告)日：2018-11-01

申请号：US15962697

申请日：2018-04-25

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yundeok YOON ,  Jaesung KIM ,  Junyong AHN

IPC: H01L31/0236 ,  H01L31/18

Abstract: Disclosed is a solar cell including: a semiconductor substrate; a first conductive region formed at a first surface of the semiconductor substrate and having a first conductivity type; a second conductive region formed on a second surface of the semiconductor substrate opposite to the first surface, and having a second conductivity type opposite to the first conductivity type, wherein the second conductive region including a semiconductor layer different and separated from the semiconductor substrate; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The second surface of the semiconductor substrate has a rounded uneven member having a rounded end portion.