公开(公告)号：US20170221783A1

公开(公告)日：2017-08-03

申请号：US15009692

申请日：2016-01-28

Applicant: Leonard TEDESCHI ,  Kartik RAMASWAMY

Inventor： Leonard TEDESCHI ,  Kartik RAMASWAMY

IPC: H01L21/66

CPC classification number: H01L22/34 ,  H01L22/26

Abstract: Embodiments include a self-aware substrate and methods for utilizing a self-aware substrate. In one embodiment, a method of processing a self-aware substrate may include initiating a processing operation on the self-aware substrate. The processing operation may be any processing operation used in the fabrication of functioning devices on a production substrate. The method may further include receiving output signals from one or more sensors on the self-aware substrate. In some embodiments, the one or more sensors are formed on non-production regions of the substrate. The method may further include comparing the output signals to an endpoint criteria that is associated with one or more processing conditions. For example, the endpoint criteria may be associated with processing conditions such as film thickness. The method may further include ending the processing operation when the endpoint criteria is satisfied.

公开(公告)号：US20170221775A1

公开(公告)日：2017-08-03

申请号：US15009705

申请日：2016-01-28

Applicant: Leonard Tedeschi ,  Kartik RAMASWAMY

Inventor： Leonard Tedeschi ,  Kartik RAMASWAMY

IPC: H01L21/66 ,  G01D5/12

Abstract: Embodiments include process monitoring devices and methods of using such process monitoring devices. In one embodiment, the process monitoring device includes a substrate. The process monitoring device may also include a plurality of sensors formed on a support surface of the substrate. According to an embodiment, each sensor is capable of producing an output signal that corresponds to a processing condition. Furthermore, embodiments include a process monitoring device that includes a network interface device that is formed on the substrate. According to an embodiment each of the plurality of sensors is communicatively coupled to the network interface device. The network interface device allows for the output signals obtained from the sensors to be wirelessly transmitted to an external computer during processing operations.

公开(公告)号：US20170131217A1

公开(公告)日：2017-05-11

申请号：US14935186

申请日：2015-11-06

Applicant: Leonard TEDESCHI ,  Kartik RAMASWAMY

Inventor： Leonard TEDESCHI ,  Kartik RAMASWAMY

IPC: G01N21/94 ,  G01N21/95

CPC classification number: G01N21/94 ,  G01N21/9501 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/20

Abstract: Embodiments include devices and methods for detecting particles in a wafer processing tool. In an embodiment, a particle monitoring device having a wafer form factor includes several micro sensors capable of operating in all pressure regimes, e.g., under vacuum conditions. The particle monitoring device may include a clock to output a time value when a parameter of a micro sensor changes in response to receiving a particle within a chamber of the wafer processing tool. A location of the micro sensor or the time value may be used to determine a source of the particle. Other embodiments are also described and claimed.

公开(公告)号：US20140356768A1

公开(公告)日：2014-12-04

申请号：US13904716

申请日：2013-05-29

Applicant: Banqiu WU ,  Ajay KUMAR ,  Amitabh SABHARWAL ,  Leonid DORF ,  Ming-Feng WU ,  Shahid RAUF ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Omkaram NALAMASU

Inventor： Banqiu WU ,  Ajay KUMAR ,  Amitabh SABHARWAL ,  Leonid DORF ,  Ming-Feng WU ,  Shahid RAUF ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Omkaram NALAMASU

IPC: G03F1/80

CPC classification number: G03F1/80

Abstract: Embodiments of the present invention generally provide an apparatus and methods for etching photomasks using charged beam plasma. In one embodiment, an apparatus for performing a charged beam plasma process on a photomask includes a processing chamber having a chamber bottom, a chamber ceiling and chamber sidewalls defining an interior volume, a substrate support pedestal disposed in the interior volume, a charged beam generation system disposed adjacent to the chamber sidewall, and a RF bias electrode disposed in the substrate support.

Abstract translation: 本发明的实施例通常提供使用带电束等离子体蚀刻光掩模的装置和方法。 在一个实施例中，用于在光掩模上执行带电束等离子体处理的装置包括具有室底部的处理室，限定内部容积的室顶板和室侧壁，设置在内部容积中的基板支撑基座，带电束产生 系统，邻近室侧壁设置，RF偏置电极设置在基板支撑件中。

公开(公告)号：US20140262031A1

公开(公告)日：2014-09-18

申请号：US13893199

申请日：2013-05-13

Applicant: Sergey G. BELOSTOTSKIY ,  Alexander MARCACCI ,  Kartik RAMASWAMY ,  Srinivas D. NEMANI ,  Andrew NGUYEN ,  Yogananda SARODE

Inventor： Sergey G. BELOSTOTSKIY ,  Alexander MARCACCI ,  Kartik RAMASWAMY ,  Srinivas D. NEMANI ,  Andrew NGUYEN ,  Yogananda SARODE

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32091

Abstract: A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary 7 source utilizes RF energy of a first frequency, while the secondary source utilizes RF energy of second, different frequency. The showerhead electrode is coupled to ground through a frequency dependent filter that adequately discriminates between the first and second frequencies for the showerhead electrode to be RF powered during operation of the primary source, yet adequately grounded during operation of the secondary plasma source without electrical contact switching or reliance on physically moving parts.

Abstract translation: 多室处理平台包括一个或多个多模式等离子体处理系统。 在实施例中，多模式等离子体处理系统包括多模式源组件，该多模式源组件具有用于驱动处理室内的喷头电极上的RF信号的主要源，以及辅助源以通过在其上驱动RF信号来产生等离子体 电极在处理室的下游。 在实施例中，主7源使用第一频率的RF能量，而次级源利用第二频率的RF能量。 淋浴头电极通过频率相关的滤波器耦合到地面，该滤波器在初级源的操作期间充分地辨别喷头电极的第一和第二频率以进行RF供电，而在没有电接触切换的二级等离子体源的操作期间充分地接地 或依赖物理移动部件。

公开(公告)号：US20110024047A1

公开(公告)日：2011-02-03

申请号：US12849012

申请日：2010-08-02

Applicant: Andrew NGUYEN ,  Wing Lau CHENG ,  Hiroji HANAWA ,  Semyon L. KATS ,  Kartik RAMASWAMY ,  Yan YE ,  Kwok Manus WONG ,  Daniel J. HOFFMAN ,  Tetsuya ISHIKAWA ,  Brian C. LUE

Inventor： Andrew NGUYEN ,  Wing Lau CHENG ,  Hiroji HANAWA ,  Semyon L. KATS ,  Kartik RAMASWAMY ,  Yan YE ,  Kwok Manus WONG ,  Daniel J. HOFFMAN ,  Tetsuya ISHIKAWA ,  Brian C. LUE

IPC: C23F1/08 ,  C23C16/00 ,  C23C16/458 ,  H01L21/683

CPC classification number: C23C14/564 ,  C23C16/4404 ,  H01J37/16 ,  H01J37/32504 ,  H01J37/32862 ,  H01J37/32871 ,  H01J2237/022 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T428/24 ,  Y10T428/31678

Abstract: A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.

Abstract translation: 用于衬底处理室的支撑件包括具有衬底接收表面的卡盘，以及包括上壁的基座，该上壁包括凹槽，所述凹槽具有（i）第一深度处的附接面，以及（ii）第二深度处的流体通道 。 下壁位于凹槽中并附着到上壁的附接面，以封闭流体通道。 提供流体入口以将传热流体供应到流体通道和设置用于从流体通道排出传热流体的流体出口。

公开(公告)号：US20110186545A1

公开(公告)日：2011-08-04

申请号：US12905624

申请日：2010-10-15

Applicant: Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini B. PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

Inventor： Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini B. PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

IPC: C23F1/08 ,  C23F1/00 ,  C23C16/50 ,  C23C16/458 ,  C23C16/52 ,  G05D23/00

CPC classification number: H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。