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    VEHICLE FRONT HOOD STRUCTURE
    4.
    发明申请
    VEHICLE FRONT HOOD STRUCTURE 有权
    车身前结构

    公开(公告)号：US20130241241A1

    公开(公告)日：2013-09-19

    申请号：US13990870

    申请日：2012-01-06

    申请人： Mai Sekikawa ,  Masato Ishibashi

    发明人： Mai Sekikawa ,  Masato Ishibashi

    IPC分类号： B62D25/10

    CPC分类号： B62D25/105 ,  B60R21/34 ,  B60R2021/343

    摘要： A hood frame is provided with a center bead, front radiating beads and rear radiating beads to ensure that the front hood bends in the shape of inverted letter-V under a frontal crash load. Further, the beads provide the hood frame with a stiffness (including an out-of-plane stiffness) which is required of the front hood while the downward deformation of the hood frame under a downward load can be controlled and the HIC level can be set at an appropriate level.

    摘要翻译： 罩框架设有中心珠，前辐射珠和后辐射珠，以确保前罩在正面碰撞载荷下呈倒立字母V的形状弯曲。 此外，小珠为罩框架提供前罩所需的刚度（包括平面外的刚度），同时可以控制罩框架在向下的负载下的向下变形并且可以设定HIC水平 在适当的水平。

    TOPCOAT
    5.
    发明申请
    TOPCOAT 有权

    公开(公告)号：US20110078862A1

    公开(公告)日：2011-04-07

    申请号：US12992895

    申请日：2009-05-15

    申请人： Shinji Kashiwagura ,  Masahiko Ogawa ,  Takashi Ono ,  Miwa Tada (Formerly Murakata) ,  Yoshiyuki Ito ,  Masato Ishibashi ,  Takashi Yamaguchi

    发明人： Shinji Kashiwagura ,  Masahiko Ogawa ,  Takashi Ono ,  Miwa Tada (Formerly Murakata) ,  Yoshiyuki Ito ,  Masato Ishibashi ,  Takashi Yamaguchi

    IPC分类号： C14C11/00

    CPC分类号： C14C11/006 ,  C08G18/706 ,  C09D175/04 ,  C14B7/02 ,  C14C1/065 ,  C14C3/20 ,  C14C3/22 ,  C14C3/28 ,  C14C9/02 ,  D06P1/02 ,  D06P1/5285 ,  D06P3/3206 ,  D06P3/3286 ,  C08L2666/20

    摘要： Provided is a natural leather having a novel coating layer which feels leathery. The coating film retains material properties such as strength and wearing resistance. When the user directly touches the natural leather, the coating layer present on the surface of the natural leather gives slick characteristics of natural leathers and smoothness. The natural leather has a coating film formed on a surface thereof, the coating film including: a color coat layer formed from a mixture of a hard component (10% modulus is more than 2.3 but no more than 3.0) and a soft component (10% modulus is more than 0.0 but no more than 1.0) of a two-component polyurethane resin; and a topcoat layer formed from a mixture of a medium component (resin having a 10% modulus of more than 1.0 but no more than 2.3) and a soft component (resin having a 10% modulus of more than 0.0 but no more than 1.0) of a two-component polyurethane resin.

    摘要翻译： 提供具有感觉革质的新颖涂层的天然皮革。 涂膜保持材料性能如强度和耐磨性。 当用户直接接触天然皮革时，天然皮革表面上的涂层具有天然皮革的光滑特性和光滑度。 天然皮革在其表面上具有涂膜，所述涂膜包括：由硬组分（10％模量大于2.3且不大于3.0）和软组分（10）的混合物形成的着色涂层 ％模量大于0.0，但不大于1.0）的双组分聚氨酯树脂; 和由中间成分（10％以上的模量大于1.0但不超过2.3的树脂）和软成分（10％模量大于0.0但不超过1.0的树脂）的混合物形成的面漆层， 的双组分聚氨酯树脂。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20100044802A1

    公开(公告)日：2010-02-25

    申请号：US12495070

    申请日：2009-06-30

    申请人： Masato Ishibashi ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Takaaki Tsunomura ,  Takashi Kuroi

    发明人： Masato Ishibashi ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Takaaki Tsunomura ,  Takashi Kuroi

    IPC分类号： H01L29/06 ,  H01L21/762

    CPC分类号： H01L21/763 ,  H01L21/76224 ,  H01L29/7846

    摘要： Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.

    摘要翻译： 提供一种半导体器件，其可以形成具有接近设计尺寸的尺寸的元件区域，抑制类似于栅极引起的漏极泄漏的现象，并且进一步抑制通过导电的氧化对元件区域施加的压缩应力 电影; 以及半导体装置的制造方法。 沟槽在半导体基板的主表面上制成。 通过氧化每个沟槽的壁表面，在壁表面上形成第一氧化膜。 嵌入的导电膜被形成为嵌入到沟槽中。 嵌入的导电膜在含有活性氧化物质的气氛中被氧化，从而形成第二氧化膜。 通过CVD或涂布法在第二氧化物膜上形成第三氧化物膜。

    Semiconductor device and its manufacturing method
    9.
    发明授权
    Semiconductor device and its manufacturing method 失效
    半导体器件及其制造方法

    公开(公告)号：US08043918B2

    公开(公告)日：2011-10-25

    申请号：US12840430

    申请日：2010-07-21

    申请人： Takashi Kuroi ,  Katsuyuki Horita ,  Masashi Kitazawa ,  Masato Ishibashi

    发明人： Takashi Kuroi ,  Katsuyuki Horita ,  Masashi Kitazawa ,  Masato Ishibashi

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823475 ,  H01L21/743 ,  H01L21/76229 ,  H01L21/763 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： To manufacture in high productivity a semiconductor device capable of securely achieving element isolation by a trench-type element isolation and capable of effectively preventing potentials of adjacent elements from affecting other nodes, a method of manufacturing the semiconductor device includes: a step of forming a first layer on a substrate; a step of forming a trench by etching the first layer and the substrate; a step of thermally oxidizing an inner wall of the trench; a step of depositing a first conductive film having a film thickness equal to or larger than one half of the trench width of the trench on the substrate including the trench; a step of removing a first conductive film from the first layer by a CMP method and keeping the first conductive film left in only the trench; a step of anisotropically etching the first conductive film within the trench to adjust the height of the conductive film to become lower than the height of the surface of the substrate; a step of depositing an insulating film on the first conductive film by the CVD method to embed the upper part of the first conductive film within the trench; a step of flattening the insulating film by the CMP method; and a step of removing the first layer.

    摘要翻译： 为了以高生产率制造能够通过沟槽型元件隔离可靠地实现元件隔离并且能够有效地防止相邻元件的电位影响其他节点的半导体器件，制造半导体器件的方法包括：形成第一 层; 通过蚀刻第一层和衬底形成沟槽的步骤; 热氧化沟槽内壁的步骤; 在包括沟槽的衬底上沉积膜厚度等于或大于沟槽的沟槽宽度的一半的第一导电膜的步骤; 通过CMP方法从第一层除去第一导电膜并保持第一导电膜仅留在沟槽中的步骤; 在沟槽内各向异性蚀刻第一导电膜的步骤，以调节导电膜的高度，使其低于衬底表面的高度; 通过CVD法在第一导电膜上沉积绝缘膜以将第一导电膜的上部嵌入沟槽内的步骤; 通过CMP方法使绝缘膜平坦化的步骤; 以及去除第一层的步骤。

    Semiconductor device and its manufacturing method
    10.
    发明授权
    Semiconductor device and its manufacturing method 失效
    半导体器件及其制造方法

    公开(公告)号：US07791163B2

    公开(公告)日：2010-09-07

    申请号：US11577878

    申请日：2005-10-18

    申请人： Takashi Kuroi ,  Katsuyuki Horita ,  Masashi Kitazawa ,  Masato Ishibashi

    发明人： Takashi Kuroi ,  Katsuyuki Horita ,  Masashi Kitazawa ,  Masato Ishibashi

    IPC分类号： H01L29/768

    CPC分类号： H01L21/823475 ,  H01L21/743 ,  H01L21/76229 ,  H01L21/763 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In the process of manufacturing a semiconductor device, a first layer is formed on a substrate, and the first layer and the substrate are etched to form a trench. The inner wall of the trench is thermally oxidized. On the substrate, including inside the trench, is deposited a first conductive film having a thickness equal to or larger than one half of the width of the trench. The first conductive film on the first layer is removed by chemical mechanical polishing such that the first conductive film remains in only the trench. The height of the first conductive film in the trench is adjusted to be lower than a surface of the substrate by anisotropically etching the first conductive film. An insulating film is deposited on the substrate by chemical vapor deposition to cover an upper surface of the first conductive film in the trench. The insulating film is flattened by chemical mechanical polishing, and the first layer is removed.

    摘要翻译： 在制造半导体器件的过程中，在衬底上形成第一层，并且蚀刻第一层和衬底以形成沟槽。 沟槽的内壁被热氧化。 在包括沟槽内部的衬底上沉积厚度等于或大于沟槽宽度的一半的第一导电膜。 通过化学机械抛光去除第一层上的第一导电膜，使得第一导电膜仅保留在沟槽中。 通过各向异性蚀刻第一导电膜，将沟槽中的第一导电膜的高度调节为低于衬底的表面。 通过化学气相沉积在衬底上沉积绝缘膜以覆盖沟槽中的第一导电膜的上表面。 绝缘膜通过化学机械抛光而变平，第一层被去除。