公开(公告)号：US4416853A

公开(公告)日：1983-11-22

申请号：US373498

申请日：1982-04-16

申请人： Masaki Morikawa ,  Hideaki Yoshida ,  Kunio Kishida ,  Chuji Tanaka

发明人： Masaki Morikawa ,  Hideaki Yoshida ,  Kunio Kishida ,  Chuji Tanaka

IPC分类号： B23K35/30 ,  C22C9/00

CPC分类号： B23K35/302

摘要： A Cu-Ag alloy brazing filler material with low Ag content that exhibits excellent brazability and has a low vapor pressure is disclosed. The filler material comprises 5 to 35% by weight of Ag, 2.5 to 13% by weight of Si, with the balance being Cu and incidental impurities. The properties of the filler material can be improved further by addition of at least one element selected from the group consisting of Sn, In, Fe, Ni, Co, B and Li.

摘要翻译： PCT No.PCT / JP81 / 00189 Sec。 371日期：1982年4月16日 102（e）日期1982年4月16日PCT申请日1981年8月25日PCT公布。 第WO82 / 00790号公报 1982年3月18日公开了一种具有优异的钎焊性和低蒸气压的低Ag含量的Cu-Ag合金钎焊料。 填充材料包含5至35重量％的Ag，2.5至13重量％的Si，余量为Cu和附带的杂质。 通过添加选自Sn，In，Fe，Ni，Co，B和Li中的至少一种元素，可以进一步提高填充材料的性能。

公开(公告)号：US4411864A

公开(公告)日：1983-10-25

申请号：US406236

申请日：1982-07-30

申请人： Masaki Morikawa ,  Hideaki Yoshida ,  Kunio Kishida ,  Chuji Tanaka

发明人： Masaki Morikawa ,  Hideaki Yoshida ,  Kunio Kishida ,  Chuji Tanaka

IPC分类号： C22C5/06 ,  B23K35/30 ,  C22C5/08 ,  C22C9/00 ,  C22C30/02

CPC分类号： B23K35/302

摘要： A Cu-Ag alloy brazing material that exhibits excellent cold workability, brazability and has a low vapor pressure is disclosed. The filler material comprises more than 35 to 50% by weight of Ag, 2.2 to 6% by weight of Si, with the balance being Cu and incidental impurities. The properties of the filler material can be improved further by addition of at least one element selected from the group consisting of Sn, In, Fe, Ni, Co, B and Li.

摘要翻译： PCT No.PCT / JP81 / 00338 Sec。 371日期1982年7月30日 102（e）1982年7月30日PCT PCT 1991年11月18日PCT公布。 出版物WO82 / 02013 日期：1982年6月24日。公开了一种表现出优异的冷加工性，钎焊性和低蒸气压的Cu-Ag合金钎焊材料。 填料含有35〜50重量％的Ag，2.2〜6重量％的Si，余量为Cu和杂质。 通过添加选自Sn，In，Fe，Ni，Co，B和Li中的至少一种元素，可以进一步提高填充材料的性能。

公开(公告)号：US4632806A

公开(公告)日：1986-12-30

申请号：US682374

申请日：1984-12-17

申请人： Masaki Morikawa ,  Hideaki Yoshida ,  Kunio Kishida

发明人： Masaki Morikawa ,  Hideaki Yoshida ,  Kunio Kishida

IPC分类号： C22C9/00 ,  B32B15/01 ,  C22C9/04 ,  C22C9/05 ,  H01L23/50 ,  C22C9/02 ,  C22C9/06

CPC分类号： C22C9/04 ,  B32B15/01 ,  C22C9/05 ,  H01L2924/0002 ,  Y10S428/929 ,  Y10T428/12903

摘要： A Cu alloy having high resistance to oxidation for use in leads on semiconductor devices is disclosed. The alloy consists essentially of 7-15 wt % Mn, 10-30 wt % Zn, 0.2-10 wt % Ni, 0.1-3 wt % Al, with the balance being Cu and incidental impurities. Also disclosed is a Cu alloy clad material wherein the substrate is made of Cu or Cu alloy having high electrical conductivity and good heat dissipation, and the cladding or partial cladding is composed of the Cu alloy having the composition specified above.

摘要翻译： 公开了一种在半导体器件引线中使用的具有高抗氧化性的Cu合金。 该合金基本上由7-15重量％的Mn，10-30重量％的Zn，0.2-10重量％的Ni，0.1-3重量％的Al组成，余量为Cu和杂质。 还公开了一种Cu合金包覆材料，其中基体由具有高导电性和良好散热性的Cu或Cu合金制成，并且包层或部分包层由具有上述组成的Cu合金构成。

公开(公告)号：US4525434A

公开(公告)日：1985-06-25

申请号：US529593

申请日：1983-09-06

申请人： Masaki Morikawa ,  Hideaki Yoshida ,  Kunio Kishida

发明人： Masaki Morikawa ,  Hideaki Yoshida ,  Kunio Kishida

IPC分类号： C22C9/00 ,  B32B15/01 ,  C22C9/04 ,  C22C9/05 ,  H01L23/50 ,  C23C5/00

CPC分类号： C22C9/04 ,  B32B15/01 ,  C22C9/05 ,  H01L2924/0002 ,  Y10S428/929 ,  Y10T428/12903

摘要： A Cu alloy having high resistance to oxidation for use in leads on semiconductor devices is disclosed. The alloy consists essentially of 7-15 wt % Mn, 10-30 wt % Zn, 0.2-10 wt % Ni, 0.1-3 wt % Al, with the balance being Cu and incidental impurities. Also disclosed in a Cu alloy clad material wherein the substrate is made of Cu or Cu alloy having high electrical conductivity and good heat dissipation, and the cladding or partial cladding is composed of the Cu alloy having the composition specified above.

摘要翻译： 公开了一种在半导体器件引线中使用的具有高抗氧化性的Cu合金。 该合金基本上由7-15重量％的Mn，10-30重量％的Zn，0.2-10重量％的Ni，0.1-3重量％的Al组成，余量为Cu和杂质。 还公开在Cu合金包覆材料中，其中基底由具有高导电性和良好散热性的Cu或Cu合金制成，并且包层或部分包层由具有上述组成的Cu合金构成。

公开(公告)号：US4134001A

公开(公告)日：1979-01-09

申请号：US841320

申请日：1977-10-11

申请人： Yo Takeuchi ,  Masaki Morikawa ,  Chuji Tanaka ,  Tosiharu Hiji

发明人： Yo Takeuchi ,  Masaki Morikawa ,  Chuji Tanaka ,  Tosiharu Hiji

IPC分类号： B23K9/23 ,  B23K9/00

CPC分类号： B23K9/23

摘要： A process for welding a pair of thick copper plates which comprises welding the pair of copper plates with respective edges placed adjacent to each other on a backing support made of carbon at the adjacent edges in an atmosphere of an inert gas by melting a filler metal with the use of a direct current arc generated between the copper plates connected to the negative pole and a positive electrode with an arc voltage V (volt) and a welding current I (ampere) satisfying the conditions:V = 37 - 45 (1)vi>q (2)i.sup.2 /.sqroot.v

摘要翻译： 一种用于焊接一对厚铜板的方法，该方法包括在惰性气体的气氛中通过将填充金属熔化而将邻近的相邻边缘的相对边缘焊接在由邻近边缘处的碳制成的背衬支撑件上， 在连接到负极的铜板和具有电弧电压V（伏特）和焊接电流I（安培）的正极之间产生的直流电弧的使用满足以下条件：

公开(公告)号：US5282946A

公开(公告)日：1994-02-01

申请号：US903748

申请日：1992-06-25

申请人： Makoto Kinoshita ,  Jun Tamura ,  Masaki Morikawa ,  Kunio Kishida ,  Toshinori Ishii ,  Akifumi Mishima

发明人： Makoto Kinoshita ,  Jun Tamura ,  Masaki Morikawa ,  Kunio Kishida ,  Toshinori Ishii ,  Akifumi Mishima

IPC分类号： C22C5/04 ,  C22C19/07 ,  C23C14/34

CPC分类号： C22C19/07 ,  C22C5/04 ,  C23C14/3414

摘要： A sputtering target of platinum-cobalt alloy is disclosed which contains 10 to 55% by weight of platinum; 1 to 15% by weight of a first additional element selected from the group consisting of nickel and tantalum; no more than 1.5% by weight of a second additional element selected from the group consisting of boron, titanium, lanthanum, cerium, neodymium, beryllium, calcium, zirconium, and silicon; no more than 20% by weight of chromium; and balance cobalt. A method for manufacturing the sputtering target is also disclosed. In the method, a platinum-cobalt alloy containing specific ingredients in predetermined amounts is first prepared. Then, the platinum-cobalt alloy is subjected to hot plastic working with a thickness reduction of no less than 30%. Subsequently, the alloy thus hot worked is subjected to a cold plastic working with a thickness reduction of no less than 5% at a temperature less than the recrystallization temperature of the alloy.

摘要翻译： 公开了一种铂 - 钴合金的溅射靶，其包含10至55重量％的铂; 1至15重量％的选自镍和钽的第一附加元素; 不超过1.5重量％的选自硼，钛，镧，铈，钕，铍，钙，锆和硅的第二附加元素; 不超过20％的铬; 并平衡钴。 还公开了溅射靶的制造方法。 在该方法中，首先制备含有预定量的特定成分的铂 - 钴合金。 然后，铂 - 钴合金经受热塑性加工，其厚度减小不小于30％。 随后，将这样热加工的合金在小于合金的再结晶温度的温度下进行厚度降低不小于5％的冷塑性加工。

公开(公告)号：US4354301A

公开(公告)日：1982-10-19

申请号：US296153

申请日：1981-08-25

申请人： Yo Takeuchi ,  Masaki Morikawa ,  Chuji Tanaka ,  Toshiharu Hiji ,  Hiroshi Ikeda

发明人： Yo Takeuchi ,  Masaki Morikawa ,  Chuji Tanaka ,  Toshiharu Hiji ,  Hiroshi Ikeda

IPC分类号： A44C27/00 ,  B23K20/04 ,  B23K20/233 ,  B23P13/00

CPC分类号： A44C27/00 ,  B23K20/04 ,  B23K20/233 ,  Y10T29/302 ,  Y10T29/49588 ,  Y10T29/4959 ,  Y10T29/49597 ,  Y10T29/4981 ,  Y10T428/12993

摘要： There is disclosed a method for manufacturing a stripe-patterned metal plate or composite material. Plural kinds of metal sheet blanks having different colors are placed one upon another to provide a layer structure. The metal sheets of the layer structure are bonded to each other directly and metallurgically in a solid state to provide a layer-structured plate. The layer-structured plate is cut in a direction along a face extending at a predetermined angle to a layer face thereof to provide at least one thin metal plate intermediate. The metal plate intermediate is inserted into a complementary hole formed through a solid package of metal. Then, the package containing the metal plate intermediate is hot rolled into a predetermined length with its width remaining substantially unchanged so that the metal plate intermediate is simultaneously extended at a predetermined reduction rate with its width remaining substantially unchanged.

摘要翻译： 公开了一种用于制造条纹图案的金属板或复合材料的方法。 具有不同颜色的多种金属片坯料彼此放置以提供层结构。 层结构的金属片材以固态直接地和冶金地彼此结合，以提供层状结构的板。 层状结构的板在沿着与其面面以预定角度延伸的面的方向上切割，以提供至少一个薄金属板中间体。 将金属板中间体插入通过固体金属包装形成的互补孔中。 然后，将包含金属板中间体的包装热轧成预定长度，其宽度基本上保持不变，使得金属板中间体以预定的减小率同时延伸，其宽度基本保持不变。

公开(公告)号：US4717436A

公开(公告)日：1988-01-05

申请号：US36249

申请日：1987-04-09

申请人： Naoyuki Hosoda ,  Masaki Morikawa ,  Naoki Uchiyama ,  Hideaki Yoshida ,  Toshiaki Ono

发明人： Naoyuki Hosoda ,  Masaki Morikawa ,  Naoki Uchiyama ,  Hideaki Yoshida ,  Toshiaki Ono

IPC分类号： C22C9/00 ,  C30B13/00 ,  H01B1/02 ,  H01L21/48 ,  H01L23/49

CPC分类号： H01L24/43 ,  C22C9/00 ,  C30B13/00 ,  C30B29/02 ,  H01B1/026 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/0101 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20752 ,  Y10T428/12431

摘要： The present invention eliminates the problems associated with the use of oxygen-free copper and other high-purity copper materials as bonding wires. In accordance with one aspect of the present invention, at least one rare earth element, or at least one element selected from the group consisting of Mg, Ca, Ti, Zr, Hf, Li, Na, K, Rb and Cs, or the combination of at least one rare earth element and at least one elemented selected from the above-specified group is incorporated in high-purity copper as a refining component in an amount of 0.1-100 ppm on a weight basis, and the high-purity copper is subsequently refined by zone melting. The very fine wire drawn from the so refined high-purity copper has the advantage that it can be employed in high-speed ball bonding of a semiconductor chip with a minimum chance of damaging the bonding pad on the chip by the ball forming at the tip of the wire.In accordance with another aspect of the present invention, 0.5-3 ppm of a rare earth element and/or Y is further incorporated as an alloying component in the zone-refined high-purity copper.

摘要翻译： 本发明消除了与使用无氧铜和其它高纯度铜材料作为接合线相关的问题。 根据本发明的一个方面，至少一种稀土元素或选自Mg，Ca，Ti，Zr，Hf，Li，Na，K，Rb和Cs中的至少一种元素，或 将至少一种稀土元素和至少一种选自上述特定基团的元素的组合作为精制组分以重量计以0.1-100ppm的量加入到高纯度铜中，并且将高纯度铜 随后通过区域熔化进行精制。 从精细化的高纯度铜制成的极细金属丝具有以下优点：可以将半导体芯片的高速球焊接在最小的可能性上，通过在尖端处的球形成损坏芯片上的焊盘 的电线。 根据本发明的另一方面，在区域精制的高纯度铜中进一步掺入0.5-3ppm的稀土元素和/或Y作为合金成分。

公开(公告)号：US4676827A

公开(公告)日：1987-06-30

申请号：US844350

申请日：1986-03-26

申请人： Naoyuki Hosoda ,  Masaki Morikawa ,  Naoki Uchiyama ,  Hideaki Yoshida ,  Toshiaki Ono

发明人： Naoyuki Hosoda ,  Masaki Morikawa ,  Naoki Uchiyama ,  Hideaki Yoshida ,  Toshiaki Ono

IPC分类号： C22C9/00 ,  C30B13/00 ,  H01B1/02 ,  H01L21/48 ,  H01L23/49 ,  C22B9/00

CPC分类号： H01L24/43 ,  C22C9/00 ,  C30B13/00 ,  C30B29/02 ,  H01B1/026 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/0101 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20752 ,  Y10T428/12431

摘要： The present invention eliminates the problems associated with the use of oxygen-free copper and other high-purity copper materials as bonding wires. At least one rare earth element, or at least one element selected from the group consisting of Mg, Ca, Ti, Zr, Hf, Li, Na, K, Rb and Cs, or the combination of at least one rare earth element and at least one elemented selected from the above-specified group is incorporated in high-purity copper as a refining component in an amount of 0.1-100 ppm on a weight basis, and the high-purity copper is subsequently refined by zone melting. The very fine wire drawn from the so refined high-purity copper has the advantage that it can be employed in high-speed ball bonding of a semiconductor chip with a minimum chance of damaging the bonding pad on the chip by the ball forming at the tip of the wire.

摘要翻译： 本发明消除了与使用无氧铜和其它高纯度铜材料作为接合线相关的问题。 至少一种稀土元素或选自Mg，Ca，Ti，Zr，Hf，Li，Na，K，Rb和Cs中的至少一种元素，或至少一种稀土元素和 从上述规定组中选择的至少一种元素作为精制成分以0.1〜100ppm的重量配合在高纯度铜中，高纯度铜随后通过区域熔融进行精制。 从精细化的高纯度铜制成的极细金属丝具有以下优点：可以将半导体芯片的高速球接合用于通过在尖端处的球形成而损坏芯片上的焊盘的最小机会 的电线。

公开(公告)号：US08887374B2

公开(公告)日：2014-11-18

申请号：US13112580

申请日：2011-05-20

申请人： Takeshi Fujita ,  Masaki Morikawa

发明人： Takeshi Fujita ,  Masaki Morikawa

IPC分类号： H01S4/00 ,  C03B19/09 ,  H05B7/085 ,  C04B41/91 ,  C04B35/52 ,  C04B41/00 ,  C04B41/53

CPC分类号： C03B19/095 ,  C04B35/52 ,  C04B41/009 ,  C04B41/53 ,  C04B41/91 ,  C04B2235/72 ,  H05B7/085 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49204 ,  Y10T29/49206

摘要： Method of manufacturing a fused silica crucible, including manufacturing a plurality of carbon electrodes for melting a vitreous silica object to be melted by arc discharge by rubbing the surface of a carbon electrode of the electrodes with a vitreous silica of the same type as the vitreous silica object to be melted, by at least one of: inserting a front end of the carbon electrode into a storage tank storing powdered vitreous silica, by at least one of rotating and reciprocating in an axial direction the storage tank and the carbon electrode relative to each other; rubbing the surface of the carbon electrode by ejecting powdered vitreous silica from a nozzle onto the surface of the electrode; rubbing the surface of the electrode with a vitreous silica grinder; and rubbing the surface of the electrode against a rotating surface of a portion of a fused vitreous silica crucible.

摘要翻译： 石英玻璃坩埚的制造方法，其特征在于，使用与所述玻璃状二氧化硅相同类型的玻璃状二氧化硅摩擦所述电极的碳电极的表面，制造多个用于熔融氧化硅玻璃物体的电弧放电熔化的碳电极 通过以下至少一种方式，通过以下至少一种方式：通过沿着轴向方向旋转和往复运动的方式将碳电极的前端插入储存粉状玻璃状二氧化硅的储存罐中，至少一个相对于每个存储罐和碳电极 其他; 通过将粉末状二氧化硅从喷嘴喷射到电极的表面上来摩擦碳电极的表面; 用石英砂磨机摩擦电极表面; 并且将电极的表面相对于熔融玻璃状石英坩埚的一部分的旋转表面摩擦。