公开(公告)号：US5471067A

公开(公告)日：1995-11-28

申请号：US78037

申请日：1993-06-18

申请人： Masao Ikeda ,  Satoshi Ito ,  Yoshino Iochi ,  Takao Miyajima ,  Masafumi Ozawa ,  Katsuhiro Akimoto ,  Akira Ishibash ,  Futoshi Hiei

发明人： Masao Ikeda ,  Satoshi Ito ,  Yoshino Iochi ,  Takao Miyajima ,  Masafumi Ozawa ,  Katsuhiro Akimoto ,  Akira Ishibash ,  Futoshi Hiei

IPC分类号： H01L29/15 ,  H01L21/44 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/0421 ,  H01L33/28 ,  H01S5/3068 ,  H01S5/327 ,  H01S5/347

摘要： A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer.

摘要翻译： 公开了能够发出蓝光或绿光的半导体激光器。 半导体激光器包括以n型ZnMgSSe覆层，有源层，p型ZnMgSSe覆层，p型ZnSe接触层和p型ZnTe接触层，该n型ZnMgSSe覆层以n型 GaAs衬底。 在p型ZnTe接触层上设置p侧电极。 在n型GaAs衬底的背面设有n侧电极。 在p型ZnSe接触层和p型ZnSe接触层之间的接合界面处，在p型ZnSe接触层中产生的耗尽层中提供包含由p型ZnTe构成的量子阱和由p型ZnSe制成的阻挡层的多量子阱层。 p型ZnTe接触层。 从p侧电极注入的孔通过在多量子阱层的量子阱中形成的量子级的谐振隧穿效应而通过结。

公开(公告)号：US5515393A

公开(公告)日：1996-05-07

申请号：US101725

申请日：1993-08-04

申请人： Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Takao Miyajima ,  Masafumi Ozawa ,  Yuko Morinaga ,  Futoshi Hiei ,  Kazushi Nakano ,  Toyoharu Ohata

发明人： Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Takao Miyajima ,  Masafumi Ozawa ,  Yuko Morinaga ,  Futoshi Hiei ,  Kazushi Nakano ,  Toyoharu Ohata

IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/327 ,  H01S5/34 ,  H01S5/347 ,  H01S3/18

CPC分类号： B82Y20/00 ,  H01S5/327 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/3409 ,  H01S5/347

摘要： A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer.

摘要翻译： 公开了一种半导体激光器，其使用能够发出蓝色至绿色光的II-VI族化合物半导体作为覆盖层的材料。 在半导体激光器的一个方面，n型ZnSe缓冲层，n型ZnMgSSe覆层，由例如ZnCdSe，p型ZnMgSSe覆层和p型ZnSe接触层制成的有源层 依次堆叠在n型GaAs衬底上。 提供与p型ZnSe接触层接触的诸如Au / Pd电极的p侧电极。 在n型GaAs衬底的背表面上设置诸如In电极的n侧电极。 在半导体激光器的另一方面，在n型ZnMgSSe包层和有源层之间设置由ZnSSe，ZnMgSSe或ZnSe制成的n型导光层，以及由ZnSSe，ZnMgSSe制成的p型光导层 或ZnSe被提供在p型ZnMgSSe包覆层和有源层之间。

公开(公告)号：US5459337A

公开(公告)日：1995-10-17

申请号：US197310

申请日：1994-02-16

申请人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

发明人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

IPC分类号： H01L27/15 ,  H01L33/28 ,  H01L33/00

CPC分类号： H01L33/28 ,  H01L27/156 ,  Y10S438/925 ,  Y10S438/944

摘要： A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

摘要翻译： 一种发光器件及其制造方法，其中在衬底上形成第一覆层，然后在水平方向上相对于表面形成由II-VI半导体制成的红色，绿色和蓝色发光部分 在第一包层上形成基板，然后在发光部分上形成第二包覆层，将红色，绿色和蓝色发光部分彼此电分离，使得自发光的三原色发光部分 通过改变化合物半导体层的组成，通过单晶生长工艺在相同的衬底上形成类型。

公开(公告)号：US5597740A

公开(公告)日：1997-01-28

申请号：US498438

申请日：1995-07-05

申请人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

发明人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

IPC分类号： H01L27/15 ,  H01L33/28 ,  H01L21/265

CPC分类号： H01L33/28 ,  H01L27/156 ,  Y10S438/925 ,  Y10S438/944

摘要： A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

摘要翻译： 一种发光器件及其制造方法，其中在衬底上形成第一覆层，然后在水平方向上相对于表面形成由II-VI半导体制成的红色，绿色和蓝色发光部分 在第一包层上形成基板，然后在发光部分上形成第二包覆层，将红色，绿色和蓝色发光部分彼此电分离，使得自发光的三原色发光部分 通过改变化合物半导体层的组成，通过单晶生长工艺在相同的衬底上形成类型。

公开(公告)号：US5924002A

公开(公告)日：1999-07-13

申请号：US575074

申请日：1995-12-19

申请人： Tsuyoshi Tojyo ,  Futoshi Hiei

发明人： Tsuyoshi Tojyo ,  Futoshi Hiei

IPC分类号： H01L29/45 ,  H01S5/042 ,  H01L21/28

CPC分类号： H01L29/452 ,  H01S5/0421 ,  H01S5/0425

摘要： A semiconductor device having an ohmic electrode having a satisfactory ohmic contact to an n-type GaAs can be obtained by heat treatment at low temperature. A method of manufacturing the semiconductor device having the ohmic electrode includes two processes. In the first process, a metal layer containing Ni, Sn and AuGe is formed on one main surface of the n-type GaAs. In the second process, the n-type GaAs is subjected to a heat treatment at a temperature which is equal to or higher than 190 C. and equal to or lower than 300 C. Thus, the ohmic electrode is formed on the one main surface of the n-type GaAs.

摘要翻译： 通过在低温下进行热处理，可以获得具有与n型GaAs具有令人满意的欧姆接触的欧姆电极的半导体器件。 制造具有欧姆电极的半导体器件的方法包括两种工艺。 在第一种方法中，在n型GaAs的一个主表面上形成含有Ni，Sn和AuGe的金属层。 在第二工序中，n型GaAs在等于或高于190℃等于或低于300℃的温度下进行热处理。因此，欧姆电极形成在一个主表面 的n型GaAs。

公开(公告)号：US5926179A

公开(公告)日：1999-07-20

申请号：US939220

申请日：1997-09-29

申请人： Satoru Matsuda ,  Futoshi Hiei ,  Tatsushi Nashida

发明人： Satoru Matsuda ,  Futoshi Hiei ,  Tatsushi Nashida

IPC分类号： G06F3/14 ,  G06T17/00

CPC分类号： G06F3/14 ,  G06T17/00

摘要： To allow a user to quickly and surely recognize whether an object is chat-enabled or not. A pointer is displayed on a three-dimensional virtual reality space image and, when the pointer is placed onto any of objects displayed in the three-dimensional virtual reality space image to specify the pointed object, it is determined whether that object is chat-enable based on the attribute information thereof. If the object is found chat-enabled, the pointer having a normal shape of an arrow is changed to a pointer 201a having a shape resembling a human face. This novel constitution allows a user to intuitively understand whether each of the objects displayed in the three-dimensional virtual reality space is chat-enabled or not.

摘要翻译： 允许用户快速确定地识别对象是否启用了聊天功能。 在三维虚拟现实空间图像上显示指针，并且当指针被放置在三维虚拟现实空间图像中显示的任何对象上以指定所指向的对象时，确定该对象是否是聊天启用 基于其属性信息。 如果对象被发现启用聊天，则具有正常形状的箭头的指针被改变为具有类似于人脸的形状的指针201a。 这种新颖的构造允许用户直观地了解在三维虚拟现实空间中显示的每个对象是否是启用聊天的。

公开(公告)号：US5917243A

公开(公告)日：1999-06-29

申请号：US789082

申请日：1997-01-27

申请人： Tsuyoshi Tojyo ,  Futoshi Hiei

发明人： Tsuyoshi Tojyo ,  Futoshi Hiei

IPC分类号： H01L29/45 ,  H01S5/042 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/452 ,  H01S5/0421 ,  H01S5/0425

摘要： A semiconductor device having an ohmic electrode having a satisfactory ohmic contact to an n-type GaAs can be obtained by heat treatment at low temperature. A method of manufacturing the semiconductor device having the ohmic electrode includes two processes. In the first process, a metal layer containing Ni, Sn and AuGe is formed on one main surface of the n-type GaAs. In the second process, the n-type GaAs is subjected to a heat treatment at a temperature which is equal to or higher than 190.degree. C. and equal to or lower than 300.degree. C. Thus, the ohmic electrode is formed on the one main surface of the n-type GaAs.

摘要翻译： 通过在低温下进行热处理，可以获得具有与n型GaAs具有令人满意的欧姆接触的欧姆电极的半导体器件。 制造具有欧姆电极的半导体器件的方法包括两种工艺。 在第一种方法中，在n型GaAs的一个主表面上形成含有Ni，Sn和AuGe的金属层。 在第二种方法中，n型GaAs在等于或高于190℃且等于或低于300℃的温度下进行热处理。因此，欧姆电极形成在一个 n型GaAs的主表面。