公开(公告)号：US5471067A

公开(公告)日：1995-11-28

申请号：US78037

申请日：1993-06-18

申请人： Masao Ikeda ,  Satoshi Ito ,  Yoshino Iochi ,  Takao Miyajima ,  Masafumi Ozawa ,  Katsuhiro Akimoto ,  Akira Ishibash ,  Futoshi Hiei

发明人： Masao Ikeda ,  Satoshi Ito ,  Yoshino Iochi ,  Takao Miyajima ,  Masafumi Ozawa ,  Katsuhiro Akimoto ,  Akira Ishibash ,  Futoshi Hiei

IPC分类号： H01L29/15 ,  H01L21/44 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/0421 ,  H01L33/28 ,  H01S5/3068 ,  H01S5/327 ,  H01S5/347

摘要： A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer.

摘要翻译： 公开了能够发出蓝光或绿光的半导体激光器。 半导体激光器包括以n型ZnMgSSe覆层，有源层，p型ZnMgSSe覆层，p型ZnSe接触层和p型ZnTe接触层，该n型ZnMgSSe覆层以n型 GaAs衬底。 在p型ZnTe接触层上设置p侧电极。 在n型GaAs衬底的背面设有n侧电极。 在p型ZnSe接触层和p型ZnSe接触层之间的接合界面处，在p型ZnSe接触层中产生的耗尽层中提供包含由p型ZnTe构成的量子阱和由p型ZnSe制成的阻挡层的多量子阱层。 p型ZnTe接触层。 从p侧电极注入的孔通过在多量子阱层的量子阱中形成的量子级的谐振隧穿效应而通过结。

公开(公告)号：US5515393A

公开(公告)日：1996-05-07

申请号：US101725

申请日：1993-08-04

申请人： Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Takao Miyajima ,  Masafumi Ozawa ,  Yuko Morinaga ,  Futoshi Hiei ,  Kazushi Nakano ,  Toyoharu Ohata

发明人： Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Takao Miyajima ,  Masafumi Ozawa ,  Yuko Morinaga ,  Futoshi Hiei ,  Kazushi Nakano ,  Toyoharu Ohata

IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/327 ,  H01S5/34 ,  H01S5/347 ,  H01S3/18

CPC分类号： B82Y20/00 ,  H01S5/327 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/3409 ,  H01S5/347

摘要： A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer.

摘要翻译： 公开了一种半导体激光器，其使用能够发出蓝色至绿色光的II-VI族化合物半导体作为覆盖层的材料。 在半导体激光器的一个方面，n型ZnSe缓冲层，n型ZnMgSSe覆层，由例如ZnCdSe，p型ZnMgSSe覆层和p型ZnSe接触层制成的有源层 依次堆叠在n型GaAs衬底上。 提供与p型ZnSe接触层接触的诸如Au / Pd电极的p侧电极。 在n型GaAs衬底的背表面上设置诸如In电极的n侧电极。 在半导体激光器的另一方面，在n型ZnMgSSe包层和有源层之间设置由ZnSSe，ZnMgSSe或ZnSe制成的n型导光层，以及由ZnSSe，ZnMgSSe制成的p型光导层 或ZnSe被提供在p型ZnMgSSe包覆层和有源层之间。

公开(公告)号：US5373175A

公开(公告)日：1994-12-13

申请号：US136870

申请日：1993-10-18

申请人： Masafumi Ozawa ,  Satoshi Ito ,  Fumiyo Narui

发明人： Masafumi Ozawa ,  Satoshi Ito ,  Fumiyo Narui

IPC分类号： H01L21/28 ,  H01L21/443 ,  H01L31/0224 ,  H01L33/04 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/443 ,  H01L31/0224 ,  H01L33/145 ,  H01L33/28 ,  H01S5/0421 ,  H01S5/327

摘要： An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer made of Pd or an alloy containing Pd; and a metal layer provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer; and providing a metal layer on the layer made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.

摘要翻译： 公开了对p型II-VI族化合物半导体的欧姆电极及其制造方法。 欧姆电极包括：由Pd或含有Pd的合金制成的层; 和设置在其上的金属层。 欧姆电极的制造方法包括以下步骤：在p型II-VI化合物半导体层上提供由Pd或含有Pd的合金制成的层; 并在由Pd或含有Pd的合金制成的层上提供金属层。 还公开了使用欧姆电极作为p侧电极的发光器件，例如半导体激光器和发光二极管。

公开(公告)号：US06761303B2

公开(公告)日：2004-07-13

申请号：US10217498

申请日：2002-08-14

申请人： Masafumi Ozawa

发明人： Masafumi Ozawa

IPC分类号： B23K3102

CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01L2924/00014

摘要： To offer a semiconductor light-emitting device capable of preventing a short circuit failure caused by adhesion of the solder, change of a beam shape, and decrease of a beam output. A semiconductor laser device 1 is manufactured by overlaying a laser chip having a p-side electrode and a n-side electrode in a crystalline substrate and a mounting plate having a first solder film and a second solder film in a supporting body. The laser chip has a level difference A such that the p-side electrode is projected beyond the n-side electrode. The mounting plate has a level difference B such that the first solder film is projected beyond the second solder film. The level difference B of the mounting plate is determined as higher than the level difference A of the laser chip. Therefor, when the mounting plate is overlaid to the laser chip, first, the n-side electrode contacts with the second solder film, and then, the p-side electrode contacts the first solder film. Accordingly, even if the solder is squeezed out in the vicinity of the n-side electrode, the solder is hardly squeezed out in the vicinity of the p-side electrode. The pn junction part is generally positioned in the vicinity of the p-side electrode, which controls the solder to adhesion to the pn junction part.

摘要翻译： 提供能够防止焊料粘附引起的短路故障的半导体发光装置，光束形状的变化和光束输出的减少。 半导体激光装置1通过将具有p侧电极和n侧电极的激光芯片重叠在结晶基板中，以及在支撑体中具有第一焊料膜和第二焊料膜的安装板来制造。 激光芯片具有电平差A，使得p侧电极突出超过n侧电极。 安装板具有水平差B，使得第一焊料膜突出超过第二焊料膜。 安装板的电平差B被确定为高于激光芯片的电平差A。 因此，当安装板与激光芯片重叠时，首先，n侧电极与第二焊料膜接触，然后p侧电极与第一焊料膜接触。 因此，即使焊料在n侧电极附近被挤出，在p侧电极附近难以挤出焊料。 pn接合部通常位于p侧电极附近，该p侧接合部控制焊料与pn接合部的粘附。

公开(公告)号：US20060128043A1

公开(公告)日：2006-06-15

申请号：US11348210

申请日：2006-02-06

申请人： Masafumi Ozawa ,  Hiroshi Yoshida ,  Takashi Kobayashi

发明人： Masafumi Ozawa ,  Hiroshi Yoshida ,  Takashi Kobayashi

IPC分类号： H01L21/00

CPC分类号： H01L21/681 ,  G02B6/4221 ,  H01S5/02252

摘要： The present invention provides a method of mounting a light emitting element, in which a light emission point can be positioned at high accuracy with respect to the mounting member. A semiconductor laser element is placed on a matching stage. Next, a position and an azimuth of a laser stripe of the semiconductor laser element is observed, and linear displacement in X and Y directions of the semiconductor laser element from a reference line and a reference point on the matching stage, and angular displacement in an azimuth (θ) within an X-Y plane are measured. In accordance with a measured result, a control signal is sent to a driving mechanism of the feeding collet to drive the feeding collet, and the position of the semiconductor laser element is adjusted on the matching stage. After the adjustment, the semiconductor laser element is fed to and placed on a mounting surface of a heat sink H.

公开(公告)号：US06720581B2

公开(公告)日：2004-04-13

申请号：US10259408

申请日：2002-09-30

申请人： Masafumi Ozawa

发明人： Masafumi Ozawa

IPC分类号： H01L2715

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0224 ,  H01S5/02272 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor laser device includes the steps of: providing a laser chip, in which a semiconductor layer is formed on a substrate, a supporting plate which supports the laser chip, a mounting plate, a first solder film positioned between the laser chip and the mounting plate and a second solder film positioned between the mounting plate and the supporting plate to form a stacked laser chip structure; applying heat to the stacked laser chip structure sufficient to melt the first solder film and the second solder film; and, applying pressure to the stacked laser chip structure during the heating step to cause simultaneous adhering of the laser chip, the mounting plate and the supporting plate to each other.

摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：提供其中在衬底上形成半导体层的激光芯片，支撑激光芯片的支撑板，安装板，位于激光器之间的第一焊料膜 芯片和安装板以及位于安装板和支撑板之间的第二焊料膜，以形成堆叠的激光芯片结构; 对堆叠的激光芯片结构施加热量以足以熔化第一焊料膜和第二焊料膜; 并且在加热步骤期间对堆叠的激光芯片结构施加压力，以使激光芯片，安装板和支撑板彼此同时粘附。

公开(公告)号：US06474531B2

公开(公告)日：2002-11-05

申请号：US09729213

申请日：2000-12-05

申请人： Masafumi Ozawa

发明人： Masafumi Ozawa

IPC分类号： B23K3112

CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01L2924/00014

摘要： To offer a semiconductor light-emitting device capable of preventing a short circuit failure caused by adhesion of the solder, change of a beam shape, and decrease of a beam output. A semiconductor laser device 1 is manufactured by overlaying a laser tip having a p-side electrode and a n-side electrode in a crystalline substrate and a mounting plate having a first solder film and a second solder film in a supporting body. The laser tip has a level difference A such that the p-side electrode is projected beyond the n-side electrode. The mounting plate has a level difference B such that the first solder film is projected beyond the second solder film. The level difference B of the mounting plate is determined as higher than the level difference A of the laser tip. Therefore, when the mounting plate is overlaid to the laser tip, first, the n-side electrode contacts with the second solder film, and then, the p-side electrode contacts the first solder film. Accordingly, even if the solder is squeezed out in the vicinity of the n-side electrode, the solder is hardly squeezed out in the vicinity of the p-side electrode. The pn junction part is generally positioned in the vicinity of the p-side electrode, which controls the solder to adhesion to the pn junction part.

公开(公告)号：US5423943A

公开(公告)日：1995-06-13

申请号：US318450

申请日：1994-10-05

申请人： Fumiyo Narui ,  Masafumi Ozawa

发明人： Fumiyo Narui ,  Masafumi Ozawa

IPC分类号： H01L21/465 ,  H01L33/00 ,  H01L33/28 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/327 ,  B44C1/22

CPC分类号： H01L33/28 ,  H01L21/465 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/1231 ,  H01S5/209 ,  H01S5/2231 ,  Y10S438/97

摘要： When a ZnSe, ZnTe or ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b (0

摘要翻译： 当Zn1-xMgxSySe1-y（0

公开(公告)号：US07078730B2

公开(公告)日：2006-07-18

申请号：US10737798

申请日：2003-12-18

申请人： Masafumi Ozawa

发明人： Masafumi Ozawa

IPC分类号： H01L27/15

CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01L2924/00014

摘要： To offer a semiconductor light-emitting device capable of preventing a short circuit failure caused by adhesion of the solder, change of a beam shape, and decrease of a beam output. A semiconductor laser device 1 is manufactured by overlaying a laser chip having a p-side electrode and a n-side electrode in a crystalline substrate and a mounting plate having a first solder film and a second solder film in a supporting body. The laser chip has a level difference A such that the p-side electrode is projected beyond the n-side electrode. The mounting plate has a level difference B such that the first solder film is projected beyond the second solder film. The level difference B of the mounting plate is determined as higher than the level difference A of the laser chip. Therefore, when the mounting plate is overlaid to the laser chip, first, the n-side electrode contacts with the second solder film, and then, the p-side electrode contacts the first solder film. Accordingly, even if the solder is squeezed out in the vicinity of the n-side electrode, the solder is hardly squeezed out in the vicinity of the p-side electrode. The pn junction part is generally positioned in the vicinity of the p-side electrode, which controls the solder to adhesion to the pn junction part.

摘要翻译： 提供能够防止焊料粘附引起的短路故障的半导体发光装置，光束形状的变化和光束输出的减少。 半导体激光装置1通过将具有p侧电极和n侧电极的激光芯片重叠在结晶基板中，以及在支撑体中具有第一焊料膜和第二焊料膜的安装板来制造。 激光芯片具有电平差A，使得p侧电极突出超过n侧电极。 安装板具有水平差B，使得第一焊料膜突出超过第二焊料膜。 安装板的电平差B被确定为高于激光芯片的电平差A。 因此，当安装板与激光芯片重叠时，首先，n侧电极与第二焊料膜接触，然后p侧电极与第一焊料膜接触。 因此，即使焊料在n侧电极附近被挤出，在p侧电极附近难以挤出焊料。 pn接合部通常位于p侧电极附近，该p侧接合部控制焊料与pn接合部的粘附。

公开(公告)号：US06853042B2

公开(公告)日：2005-02-08

申请号：US10416720

申请日：2002-09-19

申请人： Hiroshi Yoshida ,  Tadashi Taniguchi ,  Masafumi Ozawa

发明人： Hiroshi Yoshida ,  Tadashi Taniguchi ,  Masafumi Ozawa

IPC分类号： G11B7/1369 ,  G11B7/22 ,  H01L31/12 ,  H01L31/0232

CPC分类号： H01L31/12 ,  G11B7/123 ,  G11B7/13 ,  G11B7/135 ,  G11B7/22

摘要： The present invention concerns a hybrid optical element including at least one optical element (2) attached to one surface of a substrate (1), a semiconductor laser (3) and a photodetector (4) attached to the other surface of the substrate (1) and an intermediate member (relay substrate) (5) interposed between the substrate (1) and the photodetector (4). The intermediate member (5) has a through hole (6) through which a light flux incident on the photodetector (4) is allowed to pass and a part with a conductivity by which a terminals of the photodetector (4) are connected to a conductor pattern on the substrate (1).

摘要翻译： 本发明涉及一种混合光学元件，其包括附着到基板（1）的一个表面的至少一个光学元件（2），附接到基板（1）的另一个表面的半导体激光器（3）和光电检测器（4） ）和介于基板（1）和光电检测器（4）之间的中间部件（中继基板）（5）。 中间构件（5）具有通孔（6），入射到光电检测器（4）上的光束通过该通孔，并且具有导电性的部分，光电检测器（4）的端子连接到导体 图案（1）。