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    Method of mounting light emitting element
    1.
    发明授权
    Method of mounting light emitting element 有权
    发光元件的安装方法

    公开(公告)号：US07264980B2

    公开(公告)日：2007-09-04

    申请号：US11348210

    申请日：2006-02-06

    申请人： Masafumi Ozawa ,  Hiroshi Yoshida ,  Takashi Kobayashi

    发明人： Masafumi Ozawa ,  Hiroshi Yoshida ,  Takashi Kobayashi

    IPC分类号： H01L21/00 ,  H01L29/26

    CPC分类号： H01L21/681 ,  G02B6/4221 ,  H01S5/02252

    摘要： The present invention provides a method of mounting a light emitting element, in which a light emission point can be positioned at high accuracy with respect to the mounting member. A semiconductor laser element is placed on a matching stage. Next, a position and an azimuth of a laser stripe of the semiconductor laser element is observed, and linear displacement in X and Y directions of the semiconductor laser element from a reference line and a reference point on the matching stage, and angular displacement in an azimuth (θ) within an X-Y plane are measured. In accordance with a measured result, a control signal is sent to a driving mechanism of the feeding collet to drive the feeding collet, and the position of the semiconductor laser element is adjusted on the matching stage. After the adjustment, the semiconductor laser element is fed to and placed on a mounting surface of a heat sink H.

    摘要翻译： 本发明提供了一种安装发光元件的方法，其中发光点可以相对于安装构件以高精度定位。 将半导体激光元件放置在匹配台上。 接下来，观察半导体激光元件的激光条的位置和方位角，并且从参考线和匹配台上的参考点在半导体激光元件的X和Y方向上的线性位移以及匹配台中的角位移 测量XY平面内的方位角（θ）。 根据测量结果，将控制信号发送到馈送夹头的驱动机构以驱动馈送夹头，并且在匹配台上调整半导体激光元件的位置。 在调整之后，半导体激光元件被馈送到放置在散热器H的安装表面上并被放置在散热器H的安装表面上。

    Method of fabricating a semiconductor device
    2.
    发明授权
    Method of fabricating a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06323059B1

    公开(公告)日：2001-11-27

    申请号：US09550209

    申请日：2000-04-17

    申请人： Hiroshi Yoshida ,  Tsuyoshi Tojo ,  Masafumi Ozawa

    发明人： Hiroshi Yoshida ,  Tsuyoshi Tojo ,  Masafumi Ozawa

    IPC分类号： H01L2148

    CPC分类号： H01S5/02212 ,  B82Y20/00 ,  H01L2224/48091 ,  H01S5/0207 ,  H01S5/0224 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/32341 ,  H01S5/34313 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2304/12 ,  H01L2924/00014

    摘要： A conductive mounting board provided in a package has recessed portion and a projecting portion, and an insulating mounting board is disposed on the recessed portion. The insulating mounting board is disposed on the recessed portion. The insulating mounting board has an insulating board on the surface of which a wiring portion is disposed. A semiconductor laser, constituted by stacked semiconductor layers each being made from a compound semiconductor composed of a group III based nitride, is disposed on the insulating mounting board and the conductive mounting board. An n-side electrode of the semiconductor laser is in contact with the insulating mounting board and a p-side electrode thereof is in contact with the conductive mounting board.

    摘要翻译： 设置在封装体中的导电性安装板具有凹部和突出部，绝缘安装基板设置在凹部上。 绝缘安装板设置在凹部上。 绝缘安装板在其表面上设置有布线部分的绝缘板。 由绝缘安装基板和导电性安装基板配置由层叠半导体层构成的半导体激光器，其由由III族氮化物构成的复合半导体构成。 半导体激光器的n侧电极与绝缘安装基板接触，其p侧电极与导电性安装基板接触。

    Light emitting device having first and second cladding layers with an active layer and carrier blocking layer therebetween
    3.
    发明授权
    Light emitting device having first and second cladding layers with an active layer and carrier blocking layer therebetween 失效
    发光器件具有第一和第二覆层，其间具有活性层和载流子阻挡层

    公开(公告)号：US5475237A

    公开(公告)日：1995-12-12

    申请号：US395976

    申请日：1995-02-28

    申请人： Fumiyo Narui ,  Masafumi Ozawa

    发明人： Fumiyo Narui ,  Masafumi Ozawa

    IPC分类号： H01L21/465 ,  H01L33/00 ,  H01L33/28 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/327 ,  H01L29/06 ,  H01S3/19

    CPC分类号： H01L33/28 ,  H01L21/465 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/1231 ,  H01S5/209 ,  H01S5/2231 ,  Y10S438/97

    摘要： A light emitting device is formed of a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer. A carrier blocking layer also serving as an etching stopping layer during formation of the second cladding layer is provided between the active layer and the second cladding layer. Both sides of the second cladding layer are filled by a semiconductor layer having a resistance substantially higher than the other layers which the filler layer is in contact with. The first and second cladding layers, active layer, carrier blocking layer, and semiconductor layer of higher resistance comprise a II-VI compound semiconductor.

    摘要翻译： 发光装置由基板，基板上的第一包层，第一包层的有源层和有源层的第二包层构成。 在有源层和第二覆层之间设置有在第二包层形成期间也用作蚀刻停止层的载流子阻挡层。 第二包覆层的两面被具有比填充层接触的其他层的电阻显着地高的半导体层填充。 第一和第二覆层，有源层，载流子阻挡层和具有较高电阻的半导体层包括II-VI族化合物半导体。

    Ohmic electrode and a light emitting device
    6.
    发明授权
    Ohmic electrode and a light emitting device 失效
    欧姆电极和发光器件

    公开(公告)号：US5373175A

    公开(公告)日：1994-12-13

    申请号：US136870

    申请日：1993-10-18

    申请人： Masafumi Ozawa ,  Satoshi Ito ,  Fumiyo Narui

    发明人： Masafumi Ozawa ,  Satoshi Ito ,  Fumiyo Narui

    IPC分类号： H01L21/28 ,  H01L21/443 ,  H01L31/0224 ,  H01L33/04 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01L33/00

    CPC分类号： H01L33/40 ,  H01L21/443 ,  H01L31/0224 ,  H01L33/145 ,  H01L33/28 ,  H01S5/0421 ,  H01S5/327

    摘要： An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer made of Pd or an alloy containing Pd; and a metal layer provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer; and providing a metal layer on the layer made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.

    摘要翻译： 公开了对p型II-VI族化合物半导体的欧姆电极及其制造方法。 欧姆电极包括：由Pd或含有Pd的合金制成的层; 和设置在其上的金属层。 欧姆电极的制造方法包括以下步骤：在p型II-VI化合物半导体层上提供由Pd或含有Pd的合金制成的层; 并在由Pd或含有Pd的合金制成的层上提供金属层。 还公开了使用欧姆电极作为p侧电极的发光器件，例如半导体激光器和发光二极管。

    Method of mounting light emitting element
    7.
    发明申请
    Method of mounting light emitting element 有权

    公开(公告)号：US20060128043A1

    公开(公告)日：2006-06-15

    申请号：US11348210

    申请日：2006-02-06

    申请人： Masafumi Ozawa ,  Hiroshi Yoshida ,  Takashi Kobayashi

    发明人： Masafumi Ozawa ,  Hiroshi Yoshida ,  Takashi Kobayashi

    IPC分类号： H01L21/00

    CPC分类号： H01L21/681 ,  G02B6/4221 ,  H01S5/02252

    摘要： The present invention provides a method of mounting a light emitting element, in which a light emission point can be positioned at high accuracy with respect to the mounting member. A semiconductor laser element is placed on a matching stage. Next, a position and an azimuth of a laser stripe of the semiconductor laser element is observed, and linear displacement in X and Y directions of the semiconductor laser element from a reference line and a reference point on the matching stage, and angular displacement in an azimuth (θ) within an X-Y plane are measured. In accordance with a measured result, a control signal is sent to a driving mechanism of the feeding collet to drive the feeding collet, and the position of the semiconductor laser element is adjusted on the matching stage. After the adjustment, the semiconductor laser element is fed to and placed on a mounting surface of a heat sink H.

    Mounting plate for a laser chip in a semiconductor laser device
    8.
    发明授权
    Mounting plate for a laser chip in a semiconductor laser device 失效
    半导体激光器件中激光芯片的安装板

    公开(公告)号：US06720581B2

    公开(公告)日：2004-04-13

    申请号：US10259408

    申请日：2002-09-30

    申请人： Masafumi Ozawa

    发明人： Masafumi Ozawa

    IPC分类号： H01L2715

    CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0224 ,  H01S5/02272 ,  H01L2924/00014

    摘要： A method of manufacturing a semiconductor laser device includes the steps of: providing a laser chip, in which a semiconductor layer is formed on a substrate, a supporting plate which supports the laser chip, a mounting plate, a first solder film positioned between the laser chip and the mounting plate and a second solder film positioned between the mounting plate and the supporting plate to form a stacked laser chip structure; applying heat to the stacked laser chip structure sufficient to melt the first solder film and the second solder film; and, applying pressure to the stacked laser chip structure during the heating step to cause simultaneous adhering of the laser chip, the mounting plate and the supporting plate to each other.

    摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：提供其中在衬底上形成半导体层的激光芯片，支撑激光芯片的支撑板，安装板，位于激光器之间的第一焊料膜 芯片和安装板以及位于安装板和支撑板之间的第二焊料膜，以形成堆叠的激光芯片结构; 对堆叠的激光芯片结构施加热量以足以熔化第一焊料膜和第二焊料膜; 并且在加热步骤期间对堆叠的激光芯片结构施加压力，以使激光芯片，安装板和支撑板彼此同时粘附。

    Semiconductor light-emitting device and method of manufacturing the same and mounting plate
    9.
    发明授权
    Semiconductor light-emitting device and method of manufacturing the same and mounting plate 有权

    公开(公告)号：US06474531B2

    公开(公告)日：2002-11-05

    申请号：US09729213

    申请日：2000-12-05

    申请人： Masafumi Ozawa

    发明人： Masafumi Ozawa

    IPC分类号： B23K3112

    CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/06102 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01L2924/00014

    摘要： To offer a semiconductor light-emitting device capable of preventing a short circuit failure caused by adhesion of the solder, change of a beam shape, and decrease of a beam output. A semiconductor laser device 1 is manufactured by overlaying a laser tip having a p-side electrode and a n-side electrode in a crystalline substrate and a mounting plate having a first solder film and a second solder film in a supporting body. The laser tip has a level difference A such that the p-side electrode is projected beyond the n-side electrode. The mounting plate has a level difference B such that the first solder film is projected beyond the second solder film. The level difference B of the mounting plate is determined as higher than the level difference A of the laser tip. Therefore, when the mounting plate is overlaid to the laser tip, first, the n-side electrode contacts with the second solder film, and then, the p-side electrode contacts the first solder film. Accordingly, even if the solder is squeezed out in the vicinity of the n-side electrode, the solder is hardly squeezed out in the vicinity of the p-side electrode. The pn junction part is generally positioned in the vicinity of the p-side electrode, which controls the solder to adhesion to the pn junction part.