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    Semiconductor light emitting device with lattice-matching and lattice-mismatching
    2.
    发明授权
    Semiconductor light emitting device with lattice-matching and lattice-mismatching 失效
    具有晶格匹配和晶格失配的半导体发光器件

    公开(公告)号：US5633514A

    公开(公告)日：1997-05-27

    申请号：US570376

    申请日：1995-12-11

    申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327

    CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

    摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

    摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成， 作为S，Se，Te。 在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

    Method of fabricating of light emitting device with controlled lattice mismatch
    3.
    发明授权
    Method of fabricating of light emitting device with controlled lattice mismatch 失效
    具有受控晶格失配的发光器件的制造方法

    公开(公告)号：US5872023A

    公开(公告)日：1999-02-16

    申请号：US829214

    申请日：1997-03-31

    申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

    CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

    摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

    摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成 作为S，Se，Te。 第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

    Semiconductor optical amplifier
    5.
    发明授权
    Semiconductor optical amplifier 有权
    半导体光放大器

    公开(公告)号：US08786941B2

    公开(公告)日：2014-07-22

    申请号：US13166900

    申请日：2011-06-23

    申请人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    发明人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    IPC分类号： H01S5/00

    CPC分类号： H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

    摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

    摘要翻译： 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

    BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME
    6.
    发明申请
    BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME 有权
    双分半导体激光器件，其制造方法及其驱动方法

    公开(公告)号：US20100246622A1

    公开(公告)日：2010-09-30

    申请号：US12726524

    申请日：2010-03-18

    申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    IPC分类号： H01S5/323 ,  H01L21/20 ,  H01L21/28

    CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

    摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

    摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

    Mode-locked semiconductor laser device and driving method thereof
    7.
    发明授权
    Mode-locked semiconductor laser device and driving method thereof 有权
    锁模半导体激光器件及其驱动方法

    公开(公告)号：US08442079B2

    公开(公告)日：2013-05-14

    申请号：US13035540

    申请日：2011-02-25

    申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

    发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

    IPC分类号： H01S3/098

    摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

    摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

    SEMICONDUCTOR OPTICAL AMPLIFIER
    10.
    发明申请
    SEMICONDUCTOR OPTICAL AMPLIFIER 有权
    半导体光放大器

    公开(公告)号：US20120002271A1

    公开(公告)日：2012-01-05

    申请号：US13166900

    申请日：2011-06-23

    申请人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    发明人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    IPC分类号： H01S3/00

    CPC分类号： H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

    摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

    摘要翻译： 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。