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    Transient Thermal Modeling of Multisource Power Devices
    2.
    发明申请
    Transient Thermal Modeling of Multisource Power Devices 有权
    多源功率器件的瞬态热建模

    公开(公告)号：US20120278029A1

    公开(公告)日：2012-11-01

    申请号：US13095406

    申请日：2011-04-27

    申请人： Maxat Touzelbaev ,  Yizhang Yang ,  Gamal Refai-Ahmed

    发明人： Maxat Touzelbaev ,  Yizhang Yang ,  Gamal Refai-Ahmed

    IPC分类号： G01K13/00 ,  G06F15/00

    CPC分类号： G01K7/42

    摘要： Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step. Using this IIR digital filter, temperature response subject to arbitrary time-dependent power can be calculated in very small amount of time compared with prior art methods.

    摘要翻译： 本文描述了用于改进电子系统中瞬态热响应测量的系统和方法的实施例。 本公开的实施例使用电子系统的已知热传递函数来产生具有与给定功率激励相同的动态响应的等效电阻器 - 电容器（RC）网络，因为实际电子系统将具有该功率激励。 使用热电系统之间的类比，构建了Foster RC网络，其包括多个RC级，其中电阻器和电容器并联连接。 随后，模拟热RC网络被转换成无限脉冲响应（IIR）数字滤波器，其系数可以获得模拟热RC网络的Z变换。 该IIR数字滤波器建立了当前时间步长的温度输出与前一时间步长的测量功率输入之间的递归关系。 使用该IIR数字滤波器，与现有技术方法相比，可以以非常小的时间量计算受任意时间依赖功率的温度响应。

    Transient thermal modeling of multisource power devices
    4.
    发明授权
    Transient thermal modeling of multisource power devices 有权
    多源功率器件的瞬态热建模

    公开(公告)号：US08635044B2

    公开(公告)日：2014-01-21

    申请号：US13095406

    申请日：2011-04-27

    申请人： Maxat Touzelbaev ,  Yizhang Yang ,  Gamal Refai-Ahmed

    发明人： Maxat Touzelbaev ,  Yizhang Yang ,  Gamal Refai-Ahmed

    IPC分类号： G01K13/00

    CPC分类号： G01K7/42

    摘要： Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step. Using this IIR digital filter, temperature response subject to arbitrary time-dependent power can be calculated in very small amount of time compared with prior art methods.

    摘要翻译： 本文描述了用于改进电子系统中瞬态热响应测量的系统和方法的实施例。 本公开的实施例使用电子系统的已知热传递函数来产生具有与给定功率激励相同的动态响应的等效电阻器 - 电容器（RC）网络，因为实际电子系统将具有该功率激励。 使用热电系统之间的类比，构建了Foster RC网络，其包括多个RC级，其中电阻器和电容器并联连接。 随后，模拟热RC网络被转换成无限脉冲响应（IIR）数字滤波器，其系数可以获得模拟热RC网络的Z变换。 该IIR数字滤波器建立了当前时间步长的温度输出与前一时间步长的测量功率输入之间的递归关系。 使用该IIR数字滤波器，与现有技术方法相比，可以以非常小的时间量计算受任意时间依赖功率的温度响应。

    Memory device structures including phase-change storage cells
    9.
    发明授权
    Memory device structures including phase-change storage cells 有权
    包括相变存储单元的存储器件结构

    公开(公告)号：US07848139B2

    公开(公告)日：2010-12-07

    申请号：US12233389

    申请日：2008-09-18

    申请人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    发明人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    IPC分类号： G11C11/00

    CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

    摘要： A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

    摘要翻译： 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。

    MEMORY DEVICE STRUCTURES INCLUDING PHASE-CHANGE STORAGE CELLS
    10.
    发明申请
    MEMORY DEVICE STRUCTURES INCLUDING PHASE-CHANGE STORAGE CELLS 有权
    存储器件结构包括相变存储器

    公开(公告)号：US20100067288A1

    公开(公告)日：2010-03-18

    申请号：US12233389

    申请日：2008-09-18

    申请人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    发明人： Yizhang Yang ,  Haiwen Xi ,  Yiming Shi ,  Kaizhong Gao ,  Jun Ouyang ,  Song S. Xue

    IPC分类号： G11C11/00

    CPC分类号： G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/144

    摘要： A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

    摘要翻译： 存储器件的导电写入线包括用于设置和复位器件的相变材料（PCM）存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸，并提供电绝缘，同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度，电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道，使得电阻加热部分位于通道内。