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公开(公告)号：US06528340B2
公开(公告)日：2003-03-04
申请号：US09753834
申请日：2001-01-03
IPC分类号： H01L2100
CPC分类号： G01L9/0042 , G01L9/0055 , G01P2015/084
摘要： A method of forming a composite diaphragm for a pressure transducer is disclosed. The method comprises providing a substrate layer having a first conductivity type and a first surface. Positive implants are deposited in the first surface of the substrate layer, and an epitaxial layer is grown on the first surface of the substrate layer so that the positive implants form positive diffusions in the epitaxial layer. An oxide pattern is formed on the epitaxial layer, and a top layer is deposited over the epitaxial layer and oxide pattern. The substrate layer and positive diffusions of the epitaxial layer are then etched to form the composite diaphragm. The positive diffusions can be patterned so that the resulting etched structure has improved diaphragm performance characteristics. For example, the remaining pattern can include a plurality of bosses and interconnecting battens so that the diaphragm has a relatively high burst pressure and a high output signal with improved linearity at low pressures.
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公开(公告)号：US06796193B2
公开(公告)日：2004-09-28
申请号：US10346774
申请日：2003-01-17
IPC分类号： H01L2100
CPC分类号： G01L9/0042 , G01L9/0055 , G01P2015/084
摘要： A method of forming a composite diaphragm for a pressure transducer is disclosed. The method comprises providing a substrate layer having a first conductivity type and a first surface. Positive implants are deposited in the first surface of the substrate layer, and an epitaxial layer is grown on the first surface of the substrate layer so that the positive implants form positive diffusions in the epitaxial layer. An oxide pattern is formed on the epitaxial layer, and a top layer is deposited over the epitaxial layer and oxide pattern. The substrate layer and positive diffusions of the epitaxial layer are then etched to form the composite diaphragm. The positive diffusions can be patterned so that the resulting etched structure has improved diaphragm performance characteristics. For example, the remaining pattern can include a plurality of bosses and interconnecting battens so that the diaphragm has a relatively high burst pressure and a high output signal with improved linearity at low pressures.
摘要翻译： 公开了形成用于压力传感器的复合膜片的方法。 该方法包括提供具有第一导电类型和第一表面的基底层。 阳极植入物沉积在衬底层的第一表面中，并且在衬底层的第一表面上生长外延层，使得阳性植入物在外延层中形成正扩散。 在外延层上形成氧化物图案，并且在外延层和氧化物图案上沉积顶层。 然后蚀刻衬底层和外延层的正扩散以形成复合膜。 可以对正扩散进行图案化，使得所得到的蚀刻结构具有改进的隔膜性能特性。 例如，剩余的图案可以包括多个凸台和互连的板条，使得隔膜具有相对较高的爆破压力和在低压下具有改善的线性度的高输出信号。
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公开(公告)号：US06626044B1
公开(公告)日：2003-09-30
申请号：US09677895
申请日：2000-10-03
申请人： Michael J. Haji-Sheikh , Richard Alan Davis , Mark Robert Plagens , Carl Edward Stewart , Gilberto Morales
发明人： Michael J. Haji-Sheikh , Richard Alan Davis , Mark Robert Plagens , Carl Edward Stewart , Gilberto Morales
IPC分类号： G01L708
CPC分类号： G01L19/0654 , G01L19/06
摘要： A sensor having freeze resistant features is disclosed. The sensor includes a sensor die and a buffer member that are assembled for attachment to a process fluid conduit. The buffer member defines an opening in fluid communication with the process fluid. The sensor die has a flexible diaphragm, and a capillary channel establishes fluid communication between the diaphragm area of the sensor die and the opening in the buffer member.
摘要翻译： 公开了一种具有防冻特征的传感器。 传感器包括传感器管芯和缓冲构件，其被组装用于附接到过程流体管道。 缓冲构件限定与过程流体流体连通的开口。 传感器管芯具有柔性隔膜，并且毛细通道在传感器管芯的隔膜区域和缓冲构件的开口之间建立流体连通。
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公开(公告)号：US07662650B2
公开(公告)日：2010-02-16
申请号：US10486666
申请日：2002-08-12
CPC分类号： G01R31/275 , G01R31/2831 , G01R31/2863 , G01R31/2872 , G01R31/2874 , G01R31/2884 , H01S5/0021 , H01S5/005 , H01S5/423
摘要： Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control can be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) are defined by trenches (1725) that operate as nonconductive areas (1750). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.
摘要翻译： 公开了用于向具有衬底（1720），至少一个有源层（1765）和至少一个表面层（1710）的半导体晶片（1700）提供晶片光子流控制的方法。 可以通过形成在所述晶片（1700）中形成的沟槽（1725）和/或绝缘植入物（1730）来实现光子流控制，由此有源区域（1760）由作为非导电区域（1750）的沟槽（1725）限定 ）。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的光子流量控制很重要。
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5.发明授权Providing current control over wafer borne semiconductor devices using trenches 有权提供使用沟槽的晶圆传输半导体器件的电流控制公开(公告)号：US08129253B2
公开(公告)日：2012-03-06
申请号：US10486780
申请日：2002-08-12
IPC分类号： H01L21/76
CPC分类号： G01R31/275 , G01R31/2831 , G01R31/2863 , G01R31/2872 , G01R31/2874 , G01R31/2884 , H01S5/0021 , H01S5/005 , H01S5/423
摘要： Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
摘要翻译： 公开了一种用于向具有衬底（1520），至少一个有源层（1565）和表面层（1510）的半导体晶片（1500）提供晶片寄生电流控制的方法以及形成在所述表面层上的电触头（1515） （1510）。 可以通过在电触点周围形成沟槽（1525）来实现电流控制，其中电触点和相关层限定电子装置。 绝缘植入物（1530）可以放置在沟槽（1525）中，并且可以在电子触点（1515）之间形成牺牲层（1540）。 沟槽通过促进在有源（例如，导电）区域（1560）内的电流流动并阻止电流通过非活性（例如非导电）区域（1550）来控制电流。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的电流控制很重要。
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6.发明授权Providing current control over wafer borne semiconductor devices using overlayer patterns 有权使用覆盖图案提供对晶圆传输半导体器件的电流控制公开(公告)号：US08039277B2
公开(公告)日：2011-10-18
申请号：US10486665
申请日：2002-08-12
CPC分类号： G01R31/2856 , G01R31/275 , G01R31/2831 , G01R31/2863 , G01R31/2872 , G01R31/2874 , G01R31/2884 , H01S5/0021 , H01S5/005 , H01S5/423
摘要： Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1240) having a substrate (1240), at least one active layer (1240) and at least one surface layer (1240), Current control can be achieved through the formation of patterns (1240) surrounding contacts (1215), said patterns (1240) including insulating implants and/or sacrificial layers formed between active devices represented by said contacts (1215). Current flows through active regions (1260) associated with said contacts (1215) and active devices. Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
摘要翻译： 公开了用于向具有衬底（1240），至少一个有源层（1240）和至少一个表面层（1240）的半导体晶片（1240）提供晶片寄生电流控制的方法，电流控制可以通过形成 围绕触点（1215）的图案（1240），所述图案（1240）包括在由所述触点（1215）表示的有源器件之间形成的绝缘植入物和/或牺牲层。 电流流过与所述触点（1215）和有源器件相关联的有源区（1260）。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的电流控制很重要。
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7.发明授权公开(公告)号：US06831458B2
公开(公告)日：2004-12-14
申请号：US10277037
申请日：2002-10-21
IPC分类号： G01R3309
CPC分类号： G01R33/09
摘要： A method and system for detecting a magnetic field utilizing a magnetoresistor of a magnetic sensor is disclosed. A normalized magnetoresistance associated with the magnetoresistor can be calculated such that the magnetoresistor comprises an initial magnetization direction thereof. The magnetic field is generally permitted to exceed an ability of the magnetoresistor to remain pointed in the initial magnetization direction, thereby enabling the magnetoresistor to experience a magnetization reversal thereof. The normalized resistance can be placed into a new state in response to the magnetization reversal thereof, thereby permitting the normalized resistance to be utilized as a switch thereof and allowing the magnetic sensor to detect changes in the magnetic field associated with the magnetoresistor.
摘要翻译： 公开了一种利用磁传感器的磁阻检测磁场的方法和系统。 可以计算与磁电阻相关联的归一化磁阻，使得磁阻电阻包括其初始磁化方向。 磁场通常被允许超过磁敏电阻在初始磁化方向上保持指向的能力，从而使得磁阻电阻经历其磁化反转。 归一化电阻可以响应于其磁化反转而被置于新的状态，从而允许归一化电阻用作其开关，并允许磁传感器检测与磁电阻相关联的磁场的变化。
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公开(公告)号：US06322247B1
公开(公告)日：2001-11-27
申请号：US09368621
申请日：1999-08-05
IPC分类号： G01K108
CPC分类号： G01N33/0014 , G01F1/6842 , G01F1/6845 , G01F5/00 , G01N1/2247 , G01N25/18 , G01N25/488 , G01N2001/2285
摘要： A microsensor housing having a structure with at least one inlet at one end and a thermal property sensor at the other end. Situated between the inlet and the sensor is a convection shield. Sampled fluid is taken in the inlet from a channel carrying the fluid to be sampled. The convection flow lines of the fluid are barred by the convection shield. The fluid is diffused into a cavity between the shield and sensor. The sensor detects a thermal property of the diffused fluid. One preferred shield has holes about its perimeter with a solid center part of the shield covering at a distance the sensor. The channel carrying the fluid may have screens to reduce turbulence noise and to aid in fluid transport to and from the sensor housing.
摘要翻译： 具有在一端具有至少一个入口的结构的微传感器外壳和另一端的热性传感器。 位于入口和传感器之间的是对流屏蔽。 采样流体从携带要采样的流体的通道进入入口。 流体的对流流线被对流屏蔽体所禁止。 流体扩散到屏蔽和传感器之间的空腔中。 传感器检测扩散流体的热性质。 一个优选的屏蔽件围绕其周边具有孔，屏蔽件的实心中心部分在传感器的一定距离处覆盖。 承载流体的通道可以具有筛网以减少湍流噪声并且有助于流体传输到传感器壳体和从传感器壳体传输。
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公开(公告)号：US06784659B2
公开(公告)日：2004-08-31
申请号：US10011543
申请日：2001-12-05
IPC分类号： G01P354
CPC分类号： G01D5/145 , G01D5/2451 , G01P3/487
摘要： The ring magnet speed and direction sensing scheme according to the present invention addresses many of the shortcomings of the prior art. In accordance with various aspects of the present invention, a pair of bridges placed on the same semiconductor chip are provided for sensing the passing of north/south transition points on a ring magnet. In accordance with an exemplary embodiment, the bridge contains a first group of runners that are perpendicular to a second group of runners. The bridges are placed to cause the signal from one bridge to slightly follow the signal from the other bridge. Placement of the bridges on the same chip enables highly accurate readings.
摘要翻译： 根据本发明的环形磁体速度和方向感测方案解决了现有技术的许多缺点。 根据本发明的各个方面，设置放置在同一半导体芯片上的一对桥，用于感测环形磁铁上的北/南过渡点的通过。 根据示例性实施例，桥梁包含垂直于第二组跑步者的第一组跑步者。 这些桥被放置成使来自一个桥的信号稍微跟随来自另一个桥的信号。 在同一个芯片上放置桥梁可以实现高精度读数。
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公开(公告)号：US5667879A
公开(公告)日：1997-09-16
申请号：US527471
申请日：1995-09-13
CPC分类号： G01R33/09 , Y10S428/901 , Y10T428/24917
摘要： A stack of two refractory nitride layers and a magnetoresistive layer are used to facilitate electrical connection between components of a sensor. The stack of tantalum nitride and nickel iron layers are disposed over a silicide layer that is, in turn, disposed on a diffusion of conductive material within the body of a silicon layer. A titanium tungsten layer is disposed on the stack and below a subsequent layer of a conductive metal such as aluminum. A silicon nitride passivation layer is disposed over all of the other layers.
摘要翻译： 使用两个难熔氮化物层和磁阻层的堆叠来促进传感器的部件之间的电连接。 氮化钽和镍铁层的堆叠被设置在硅化物层上，硅化物层又设置在导电材料在硅层体内的扩散上。 将钛钨层设置在叠层上并位于导电金属如铝之后的下面。 氮化硅钝化层设置在所有其它层上。
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