公开(公告)号：US5470786A

公开(公告)日：1995-11-28

申请号：US214256

申请日：1994-03-17

申请人： Michinori Irikawa ,  Masayuki Iwase

发明人： Michinori Irikawa ,  Masayuki Iwase

IPC分类号： H01S5/223 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01S5/2232 ,  H01S5/2231 ,  H01S5/2235 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/3434 ,  Y10S148/095

摘要： A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics.

摘要翻译： 一种半导体激光器件，包括半导体衬底，具有有源层的多层双异质结构，一对包覆层，脊状波导结构和形成在半导体衬底和有源层之间的限流结构。 通过这样的布置，注入电流不仅在有源层的脊上方，而且在有源层的衬底侧上变窄，以改善阈值电流及其电流限制性能。 当脊的两个横向沟槽嵌入树脂层时，可以使脊条宽度窄，以提高器件的阈值电流。 当有源层以具有两个有源层并且夹在其间的中间覆盖层的DCC结构实现时，器件将显示出低阈值电流圆形光束发散和稳定的热特性。

公开(公告)号：US5251224A

公开(公告)日：1993-10-05

申请号：US789201

申请日：1991-11-08

申请人： Michinori Irikawa ,  Masayuki Iwase

发明人： Michinori Irikawa ,  Masayuki Iwase

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34313 ,  H01S5/3434 ,  H01S5/2013 ,  H01S5/3211 ,  H01S5/32391 ,  H01S5/3403 ,  H01S5/34306 ,  Y10S977/72 ,  Y10S977/759 ,  Y10S977/761

摘要： The quantum barrier semiconductor optical devices according to this invention are characterized by strained layer super lattice multiple quantum barriers provided between active layer and p-clad layer or within p-clad layer to obtain resonance scattering of incident overflowing electrons, that is to realize phase condition in which the incident overflowing electron wave and reflected electron wave enhance each other, in the double heterostructure where active layer having at least one GaInAs(P) layer is sandwiched between n-clad layer and p-clad layer. In this case, the active layer should desirably have quantum well structure. The quantum barrier semiconductor optical device comprises a DCCtype double heterostructure made by growing an n-clad layer, a fist active layer having at least one GaInAs(P) sub-layer, a middle clad layer, a second active layer having at least one GaThAS(p) sub-layer, and a p-clad layer in the order of mention or vice versa and a super lattice resonance scattering type quantum barriers provided between the first active layer and middle clad layer or in the middle clad layer and/or between the second active layer and p-clad layer or within p-clad layer. In this case also, the active layer should desirably have quantum well structure and the quantum barriers should desirably be made up of strained layer super lattice.

公开(公告)号：US5319661A

公开(公告)日：1994-06-07

申请号：US77191

申请日：1993-06-16

申请人： Michinori Irikawa ,  Masayuki Iwase

发明人： Michinori Irikawa ,  Masayuki Iwase

IPC分类号： H01S5/223 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2232 ,  H01S5/2231 ,  H01S5/2235 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/3434 ,  Y10S148/095

摘要： A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics.

摘要翻译： 一种半导体激光器件，包括半导体衬底，具有有源层的多层双异质结构，一对包覆层，脊状波导结构和形成在半导体衬底和有源层之间的限流结构。 通过这样的布置，注入电流不仅在有源层的脊上方，而且在有源层的衬底侧上变窄，以改善阈值电流及其电流限制性能。 当脊的两个横向沟槽嵌入树脂层时，可以使脊条宽度窄，以提高器件的阈值电流。 当有源层以具有两个有源层并且夹在其间的中间覆盖层的DCC结构实现时，器件将显示出低阈值电流圆形光束发散和稳定的热特性。

公开(公告)号：US5383213A

公开(公告)日：1995-01-17

申请号：US57758

申请日：1993-05-07

申请人： Michinori Irikawa ,  Masayuki Iwase ,  Kenichi Iga

发明人： Michinori Irikawa ,  Masayuki Iwase ,  Kenichi Iga

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/2013 ,  H01S5/2205 ,  H01S5/2275 ,  H01S5/32391

摘要： There is provided a semiconductor device comprising a current confinement structure capable of reducing leakage currents. The semiconductor device comprising a current confinement structure and a multiquantum barrier structure 10 disposed in said current confinement structure and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.

摘要翻译： 提供了包括能够减少漏电流的电流限制结构的半导体器件。 该半导体器件包括电流限制结构和设置在所述电流限制结构中的多量子势垒结构10，并且具有将入射载波反射成能够允许入射和反射波相互增强的相位条件下的波的效果。

公开(公告)号：US5214662A

公开(公告)日：1993-05-25

申请号：US791767

申请日：1991-11-15

申请人： Michinori Irikawa ,  Masayuki Iwase

发明人： Michinori Irikawa ,  Masayuki Iwase

IPC分类号： H01S5/00 ,  H01S5/227

CPC分类号： H01S5/227 ,  H01S5/2275

摘要： A semiconductor optical device comprising a mesa shaped double heterostructure having an active layer on an InP substrate, and pn junction current blocking layers embedded at all sides of the said double heterostructure, wherein at least portion of said current blocking layers consists of a semiconductor layer lattice-matched to InP and having a band gap larger than that of the InP at a room temperature. Therefore, the current blocking characteristics of the current blocking layer is improved so that the increase of leakage current under operating condition of high temperature and high output power is well suppressed, and the nonlinearity in the optical output-current characteristic is drastically reduced even under such operating conditions.

公开(公告)号：US5173912A

公开(公告)日：1992-12-22

申请号：US677733

申请日：1991-04-02

申请人： Masayuki Iwase ,  Michinori Irikawa ,  Randit S. Mand

发明人： Masayuki Iwase ,  Michinori Irikawa ,  Randit S. Mand

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/40

CPC分类号： B82Y20/00 ,  H01S5/34313 ,  H01S5/3434 ,  H01S5/4043 ,  H01S5/34306

摘要： A semiconductor laser diode of pn double hetero junction type which comprises a first active layer formed on a substrate for imparting a main oscillation, a second active layer adjacent to the first active layer in such a manner that at least one of the first and second active layers is formed of a multi quantum well or single quantum well structure, an intermediate clay layer interposed between the first active layer and the second active layer for preventing duplication of wave function of confined electrons of the respective active layers, and a graded refractive index distribution region (GRIN-SCH structure layer) provided on at least one of under the first active layer and over second active layer to reduce the refractive index thereof remotely from the active layers. Thus, the semiconductor laser diode can have high characteristic temperature and lower a threshold current at the time of laser oscillation and obtain preferable operation characteristics even under severe environments of temperature condition.

公开(公告)号：US09534535B2

公开(公告)日：2017-01-03

申请号：US13668570

申请日：2012-11-05

申请人： Yuji Takahashi ,  Yuki Nakamura ,  Masaki Kurimoto ,  Masayuki Iwase

发明人： Yuji Takahashi ,  Yuki Nakamura ,  Masaki Kurimoto ,  Masayuki Iwase

IPC分类号： F02B25/06 ,  F02B63/02 ,  F02B75/02

CPC分类号： F02B63/02 ,  F02B2075/027

摘要： A four-stroke engine for a working machine with a rod is provided, where a tool is attached to one end of the rod in a longitudinal direction and the four-stroke engine is fixed to the other end of the rod in use. The four-stroke engine includes: an oil circulation pathway; and a gas-liquid separating chamber configured to separate oil from blowby gas. The gas-liquid separating chamber includes: an inflow part into which the blowby gas is introduced from the oil circulation pathway; oil discharge parts configured to flow the oil separated from the blowby gas back to the oil circulation pathway; and a blowby gas discharge part configured to discharge the blowby gas not containing oil mist from the gas-liquid separating chamber and supplies the blowby gas to an intake passageway to a combustion chamber.

摘要翻译： 提供一种用于具有杆的工作机械的四冲程发动机，其中工具沿纵向方向附接到杆的一端，并且四冲程发动机在使用中固定到杆的另一端。 四冲程发动机包括：油循环通道; 以及气液分离室，其构造成将油与窜气分离。 气液分离室包括：从油循环路径引入排气的流入部; 排油部件，其构造成使从所述窜气返回到所述油循环路径的油分离; 以及排气部，其构成为从气液分离室排出不含油雾的排气，并将排气供给到进气通路到燃烧室。

公开(公告)号：US09258903B2

公开(公告)日：2016-02-09

申请号：US13381198

申请日：2010-09-29

申请人： Masaichi Inaba ,  Masayuki Iwase

发明人： Masaichi Inaba ,  Masayuki Iwase

IPC分类号： H05K1/11 ,  H05K3/24 ,  H05K3/34

CPC分类号： H05K3/244 ,  H01L2224/8384 ,  H01L2924/01079 ,  H05K3/3452 ,  H05K2201/099 ,  Y10T29/49155

摘要： It is an object to form a conductive intermediate layer having a function of maximally preventing a solder leaching phenomenon with a low environment load and with good productivity.There are provided an insulative base material 2, a wiring circuit pattern 3 formed on at least one surface of the insulative base material 2, an electronic part mounting land 31 which is formed as part of the wiring circuit pattern 3 and on which an electronic part 7 is to be mounted, and a conductive intermediate layer 5 made of a sintered conductive ink film on the electronic part mounting land 31.

摘要翻译： 本发明的目的是形成具有在环境负荷低且生产率高的情况下最大限度地防止焊料浸出现象的导电中间层。 设置绝缘基材2，形成在绝缘基材2的至少一个表面上的布线电路图案3，形成为布线电路图案3的一部分的电子部件安装台面31，电子部件 在电子部件安装台面31上安装由烧结导电油墨膜构成的导电中间层5。

公开(公告)号：US09198298B2

公开(公告)日：2015-11-24

申请号：US13697173

申请日：2011-12-19

申请人： Masayuki Iwase ,  Kazuyuki Ozaki

发明人： Masayuki Iwase ,  Kazuyuki Ozaki

IPC分类号： H01B13/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461 ,  H05K3/06 ,  H01L21/027 ,  H01L33/42 ,  H01L31/101 ,  H05K1/09 ,  H01L31/18 ,  H05K1/03

CPC分类号： H05K3/061 ,  H01L21/0273 ,  H01L31/1016 ,  H01L31/1884 ,  H01L31/1888 ,  H01L33/42 ,  H05K1/03 ,  H05K1/09 ,  H05K2201/0108 ,  H05K2201/0329 ,  H05K2203/0264

摘要： To peel an etching resist easily and reliably without damaging a transparent conductive layer coated with the etching resist. A method for manufacturing a transparent printed circuit in an embodiment of the present invention includes: providing a transparent conductive sheet 3 having a transparent base material 1 and a transparent conductive layer 2 formed on the transparent base material 1, forming an etching resist 4 having a specified pattern on the transparent conductive layer 2, etching the transparent conductive layer 2 with the etching resist 4 as a mask, forming a peeling film 5 on the etching resist 4 and on the transparent base material 1 exposed by etching of the transparent conductive layer 2 so as to cover an area where the etching resist 4 is formed, and peeling the peeling film 5 together with the etching resist 4.

摘要翻译： 可以容易且可靠地剥离蚀刻抗蚀剂，而不会损坏涂覆有抗蚀剂的透明导电层。 本发明的实施方式的透明印刷电路的制造方法包括：提供透明基材1和形成在透明基材1上的透明导电层2的透明导电片3，形成具有 在透明导电层2上指定图案，用抗蚀剂4作为掩模蚀刻透明导电层2，在抗蚀剂4上形成剥离膜5和通过透明导电层2的蚀刻而暴露的透明基材1上 以覆盖形成抗蚀剂4的区域，并与剥离抗蚀剂4一起剥离剥离膜5。

公开(公告)号：US08920043B2

公开(公告)日：2014-12-30

申请号：US12920727

申请日：2009-03-02

申请人： Mitsuhiro Iwaya ,  Masayuki Iwase

发明人： Mitsuhiro Iwaya ,  Masayuki Iwase

IPC分类号： G02B6/40 ,  G02B6/38 ,  G02B6/43 ,  G02B6/44

CPC分类号： G02B6/3879 ,  G02B6/3821 ,  G02B6/3825 ,  G02B6/3885 ,  G02B6/3893 ,  G02B6/3897 ,  G02B6/43 ,  G02B6/4452

摘要： The present invention provides a connector unit that can surely position and connect a plurality of optical fiber plugs in a short time and easily release a connected state of optical fiber connectors even if the number of optical fiber connectors increases. A connector unit includes a positioning member for positioning a plurality of optical fiber plugs, an adapter that has plug guide holes for inserting tip ends of the optical fiber plugs to connect with the optical fiber plugs, and guide portions for guiding the positioning member with respect to the adapter and inserting the tip ends of the optical fiber plugs into the plug guide holes of the adapter to connect with the optical fiber plugs.

摘要翻译： 本发明提供了一种能够在短时间内可靠地定位和连接多个光纤插头的连接器单元，即使光纤连接器的数量增加，也容易释放光纤连接器的连接状态。 连接器单元包括用于定位多个光纤插头的定位构件，具有用于插入光纤插头的末端以插入光纤插头的插头导向孔的适配器，以及用于引导定位构件的引导部分， 到适配器并将光纤插头的末端插入到适配器的插头导向孔中以与光纤插头连接。