公开(公告)号：US5225690A

公开(公告)日：1993-07-06

申请号：US707152

申请日：1991-05-29

申请人： Takamasa Sakai ,  Motohiro Kouno ,  Sadao Hirae ,  Ikuyoshi Nakatani

发明人： Takamasa Sakai ,  Motohiro Kouno ,  Sadao Hirae ,  Ikuyoshi Nakatani

IPC分类号： G01B11/14 ,  G01B11/02 ,  G01B11/30

CPC分类号： G01B11/026 ,  G01B11/306

摘要： A narrow gap or unevenness of a surface of a specimen is measured by utilizing the tunnel effect of a light wave reflected at a boundary plane on the condition of total reflection. A laser beam emitted from a laser source is reflected at a surface of a prism on the condition of total reflection in terms of geometrical optics. If a gap between the surface of the prism and the specimen is about the wavelength of the laser beam, part of the laser beam is transmitted into the specimen, and the intensity of the transmitted beam depends on the gap width. A portion of the laser beam is reflected at the boundary plane back into the prism. Therefore, the gap can be measured by measuring the transmittance of the laser beam and comparing the same with the calculated relation between the transmittance and the gap calculated in advance. In practice, the gap width is determined by measuring intensity of the reflected laser beam in the presence of the gap and comparing it to the intensity of the reflected laser beam in the absence of the gap, i.e, when the specimen surface is more than several wavelengths away from the reflecting surface.

公开(公告)号：US5239183A

公开(公告)日：1993-08-24

申请号：US869816

申请日：1992-04-16

申请人： Motohiro Kouno ,  Ikuyoshi Nakatani ,  Takamasa Sakai ,  Sadao Hirae

发明人： Motohiro Kouno ,  Ikuyoshi Nakatani ,  Takamasa Sakai ,  Sadao Hirae

IPC分类号： G01B11/02 ,  G01B11/14 ,  G01S17/46

CPC分类号： G01S17/46 ,  G01B11/026 ,  G01B11/14

摘要： The invention provides a device which utilizes the tunnel effect occuring upon a condition of geometric total reflection, for measuring a narrow gap and surface unevenness of a specimen with high precision. An optical device 40 includes a semi-conductor laser 42, a photodiode 43, and a waveguide layer 44 is formed on a semi-conductor substrate 41 by epitaxial growth. A reflecting surface 44b of the waveguide layer 44 is parallel to the plane of the semi-conductor substrate. A laser beam emitted from the semi-conductor laser is reflected from the reflecting surface 44b under a condition of total reflection in geometrical optics. When the gap between the reflecting surface and the specimen is less than or equal to about the wavelength of the laser beam, part of the laser beam is transmitted into the specimen. The intensity of the transmitted light, which is calculated corresponding to the intensity of the reflected light, depends on the dimension of the gap. In the practice of the invention, the relationship between the transmittance and the dimension of the gap is previously obtained, and the dimension of the gap is determined corresponding to the transmittance measured. A narrow gap and the surface unevenness are accurately and precisely measured.

摘要翻译： 本发明提供了一种利用在几何全反射条件下发生的隧道效应的装置，用于以高精度测量样品的窄间隙和表面不均匀性。 光学器件40包括半导体激光器42，光电二极管43，并且通过外延生长在半导体衬底41上形成波导层44。 波导层44的反射面44b平行于半导体基板的平面。 从半导体激光器发射的激光束在几何光学中的全反射条件下从反射表面44b反射。 当反射面与试样之间的间隙小于或等于激光束的波长时，激光束的一部分被传送到试样中。 对应于反射光强度计算的透射光的强度取决于间隙的尺寸。 在本发明的实践中，预先获得间隙的透射率和尺寸之间的关系，并且根据测量的透射率确定间隙的尺寸。 准确而精确地测量窄间隙和表面凹凸。

公开(公告)号：US5568252A

公开(公告)日：1996-10-22

申请号：US363535

申请日：1994-12-23

申请人： Tatsufumi Kusuda ,  Motohiro Kouno ,  Ikuyoshi Nakatani ,  Sadao Hirae

发明人： Tatsufumi Kusuda ,  Motohiro Kouno ,  Ikuyoshi Nakatani ,  Sadao Hirae

IPC分类号： G01B11/06 ,  H01L21/66 ,  G01N21/00

CPC分类号： G01B11/0641 ,  G01B11/0625 ,  H01L22/12 ,  H01L2924/0002

摘要： Reflectance measurement with two monochromatic light beams having different wavelengths is used to obtain curves respective representing the relationship between an insulation film thickness of a semiconductor wafer and the gap between a test electrode and a semiconductor wafer surface. The C-V curve measurement at a fixed gap determines a total capacity of the gap and the insulation film, and a straight line representing the relationship between the gap and the insulation film thickness is obtained from the total capacity. An intersection where the two curves and the straight line cross gives the true values of the gap and the insulation film thickness. Other possible methods include: one for executing the C-V curve measurement and the reflectance measurement with two linear polarized light beams having identical wavelengths but different polarization directions; one for executing the reflectance measurement with three monochromatic light beams that differ in at least wavelength and/or polarization direction; and one for executing the reflectance measurement and the C-V curve measurement for two different gaps.

摘要翻译： 使用具有不同波长的两个单色光束的反射率测量来获得各自表示半导体晶片的绝缘膜厚度与测试电极和半导体晶片表面之间的间隙之间的关系的曲线。 以固定间隙的C-V曲线测量确定了间隙和绝缘膜的总容量，并且从总容量获得了表示间隙和绝缘膜厚度之间的关系的直线。 两条曲线和直线交叉的交叉点给出了间隙和绝缘膜厚度的真实值。 其他可能的方法包括：用于使用具有相同波长但不同偏振方向的两个线偏振光进行C-V曲线测量和反射率测量的方法; 一个用于在至少波长和/或偏振方向上不同的三个单色光束执行反射测量; 一个用于执行两个不同间隙的反射率测量和C-V曲线测量。

公开(公告)号：US5233291A

公开(公告)日：1993-08-03

申请号：US764493

申请日：1991-09-20

申请人： Motohiro Kouno ,  Ikuyoshi Nakatani ,  Takamasa Sakai

发明人： Motohiro Kouno ,  Ikuyoshi Nakatani ,  Takamasa Sakai

IPC分类号： H01L21/66 ,  G01B11/00 ,  G01B11/14 ,  G01N27/22 ,  G01R31/28

CPC分类号： G01R31/2831

摘要： A method of measuring C-V characteristics of a semiconductor wafer without forming an electrode on an oxide film thereof. An electrode 201 for C-V measurement is held above a semiconductor wafer 100 across a gap Ge of 1 micrometer or less, and a total capacity including that of the gap Ge is detected. The gap Ge is measured by utilizing the tunneling effect observed in total reflection of light wave. Parallelism of the electrode 201 to the wafer is adjusted by measuring the width of the gap or measuring the capacity of the gap at three different locations on the periphery of the electrode 201.

公开(公告)号：US4803948A

公开(公告)日：1989-02-14

申请号：US36803

申请日：1987-04-10

申请人： Keiji Nakagawa ,  Ikuyoshi Nakatani ,  Takamasa Sakai ,  Yusuke Muraoka

发明人： Keiji Nakagawa ,  Ikuyoshi Nakatani ,  Takamasa Sakai ,  Yusuke Muraoka

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  H01L21/67109

摘要： A heat processing apparatus for manufacturing semiconductors is constructed such that an airtightly sealing part is provided at the tubular end having equal diameter to that of a main body of the apparatus, a ring shaped packing is wound on the outer circumference of a cylindrical tube adjacent to the end to be pressed between a pair of ring bodies which are formed with tapered edges of opposite inner sides, an inner tube having an equal diameter to that of the tube is connected with the end of the cylindrical tube through a cushioning material, on the outer circumference of the inner tube an outer tube is constructed integrally with one of the ring bodies, opening ends of both the inner and the outer tubes are adapted to be closed with a lid, and to the outer tube there are provided an exhausting tube for exhausting gas in the cylindrical tube and a gas introducing tube which interrupts an open air from the cylindrical tube with the flow of inert gas which flows when the lid is opened, and exhausting holes which connect with the exhausting tube and a plurality lines of gas holes for forming "gas curtain" are provided to the inner tube.

摘要翻译： 构造半导体制造用热处理装置的结构是，在筒状端部设置气密密封部件，其直径与设备主体直径相等，环形填料卷绕在圆筒管的外圆周上 被压在形成有相对内侧的锥形边缘的一对环体之间的端部，具有与管的直径相等的直径的内管通过缓冲材料与圆柱形管的端部连接， 内管的外周，外管与其中一个环体一体地构成，内管和外管两端的开口端适于用盖封闭，并且在外管上设有用于 在圆筒管中排出气体，以及气体导入管，其在盖打开时中断来自圆筒管的开放空气与惰性气体流动 并且，在内管上设置有与排气管连接的排气孔和用于形成“气帘”的多排气孔。

公开(公告)号：US08536024B2

公开(公告)日：2013-09-17

申请号：US12970144

申请日：2010-12-16

申请人： Shohei Nagatomo ,  Mitsuru Sugata ,  Ikuyoshi Nakatani

发明人： Shohei Nagatomo ,  Mitsuru Sugata ,  Ikuyoshi Nakatani

IPC分类号： H01L21/301

CPC分类号： B23K26/0624 ,  B23K26/0673 ,  B23K26/36 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0005

摘要： Provided are a processing method for forming division originating points in a workpiece and a laser processing apparatus performing the method, which are capable of reducing light absorption in a processing trail, increasing light extraction efficiency from sapphire, and performing high speed processing. A pulsed laser beam is irradiated to a workpiece so that irradiation regions for each of unit pulsed beams of the pulsed laser beam of ultra-short pulse are formed discretely in the workpiece, and cleavage or parting of the workpiece is sequentially generated between the irradiation regions by a shock or a stress when each of unit pulsed beam is irradiated at an irradiation point, to thereby form originating points for division in the workpiece.

摘要翻译： 提供了一种用于在工件中形成分割原点的处理方法和执行该方法的激光加工设备，其能够减少处理轨迹中的光吸收，提高蓝宝石的光提取效率，并进行高速处理。 将脉冲激光束照射到工件上，使得超短脉冲激光束的单位脉冲光束中的每一个的照射区域离散地形成在工件中，并且在照射区域之间顺序地产生切割或分离工件 当在照射点照射单位脉冲光束时的冲击或应力，从而形成在工件中划分的起始点。

公开(公告)号：US20110266325A1

公开(公告)日：2011-11-03

申请号：US13094249

申请日：2011-04-26

申请人： Noriyuki Kondo ,  Ikuyoshi Nakatani

发明人： Noriyuki Kondo ,  Ikuyoshi Nakatani

IPC分类号： B26F3/00

CPC分类号： B28D5/0011 ,  H01L21/67092 ,  Y10T83/0333 ,  Y10T83/141 ,  Y10T225/10 ,  Y10T225/12 ,  Y10T225/30 ,  Y10T225/336

摘要： In a breaking operation, a substrate is moved so that a blade can be situated in line with a scribe line, and the blade is lowered to break the substrate. After the breaking, the blade is raised. Then, the substrate is moved along its surface while taking an image of the substrate by using a camera after the breaking. Moreover, the blade is lowered to break the substrate. After the breaking, the blade is raised. Then, the substrate is moved along its surface while performing image processing concurrently. After the movement of the substrate, the position of the substrate is corrected so that the following scribe line to be cut for breaking can be situated immediately below the blade. In this way, the time required for breaking the substrate formed with a multiplicity of scribe lines into pieces can be shortened.

摘要翻译： 在断开操作中，基板被移动，使得叶片可以与划线对齐，并且叶片被降低以破坏基板。 破碎后，刀片升起。 然后，在破碎之后，通过使用相机拍摄基板的图像，使基板沿其表面移动。 此外，叶片被降低以破坏基板。 破碎后，刀片升起。 然后，同时进行图像处理，沿其表面移动基板。 在基板的移动之后，校正基板的位置，使得要切断的下述划线可以位于叶片的正下方。 以这种方式，可以缩短将由多个划痕线形成的基板破碎成片所需的时间。

公开(公告)号：US08899459B2

公开(公告)日：2014-12-02

申请号：US13094249

申请日：2011-04-26

申请人： Noriyuki Kondo ,  Ikuyoshi Nakatani

发明人： Noriyuki Kondo ,  Ikuyoshi Nakatani

IPC分类号： B26F3/00 ,  H01L21/67 ,  B28D5/00

CPC分类号： B28D5/0011 ,  H01L21/67092 ,  Y10T83/0333 ,  Y10T83/141 ,  Y10T225/10 ,  Y10T225/12 ,  Y10T225/30 ,  Y10T225/336

摘要： In a breaking operation, a substrate is moved so that a blade can be situated in line with a scribe line, and the blade is lowered to break the substrate. After the breaking, the blade is raised. Then, the substrate is moved along its surface while taking an image of the substrate by using a camera after the breaking. Moreover, the blade is lowered to break the substrate. After the breaking, the blade is raised. Then, the substrate is moved along its surface while performing image processing concurrently. After the movement of the substrate, the position of the substrate is corrected so that the following scribe line to be cut for breaking can be situated immediately below the blade. In this way, the time required for breaking the substrate formed with a multiplicity of scribe lines into pieces can be shortened.

摘要翻译： 在断开操作中，基板被移动，使得叶片可以与划线对齐，并且叶片被降低以破坏基板。 破碎后，刀片升起。 然后，在破碎之后，通过使用相机拍摄基板的图像，使基板沿其表面移动。 此外，叶片被降低以破坏基板。 破碎后，刀片升起。 然后，同时进行图像处理，沿其表面移动基板。 在基板的移动之后，校正基板的位置，使得要切断的下述划线可以位于叶片的正下方。 以这种方式，可以缩短将由多个划痕线形成的基板破碎成片所需的时间。