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1.发明授权Silicon structure, method for producing the same, and solar battery using the silicon structure 失效硅结构体及其制造方法以及使用硅结构的太阳能电池公开(公告)号：US06518494B1
公开(公告)日：2003-02-11
申请号：US08701292
申请日：1996-08-22
IPC分类号： H01L3100
CPC分类号： H01L31/0547 , H01L31/02363 , H01L31/035227 , Y02E10/52
摘要： A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.
摘要翻译： 具有太阳光反射少的硅结构，适用于太阳能电池。 在石英衬底的整个表面上，以约51μm的厚度沉积Mo以形成下电极。 在下电极的整个表面上，通过使用Si 2 Cl 6混合的主要包含硅的膜，形成厚度为30至40μm的包含多个主要由硅构成并具有随机取向的多个柱状硅构件的聚集体的ap型硅结构 与BCl3。 在p型硅结构的表面上，P通过使用POCl 3的热扩散法扩散，在柱状硅构件的周围形成n型区域。 在p型硅结构的整个表面上，形成厚度为30〜40μm的氧化铟锡的透明电极，在透明电极上形成厚度约为1μm的包含Al的上部电极。
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公开(公告)号：US5766342A
公开(公告)日：1998-06-16
申请号：US544016
申请日：1995-10-17
IPC分类号： C23C16/24 , C23C16/448 , C30B23/06
CPC分类号： C23C16/4486 , C23C16/24 , Y10T117/1024
摘要： The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.
摘要翻译： 本发明的形成硅膜的方法包括以下步骤：在常压和常温下将含有硅和氯的化合物以液体形式引入反应室中，并将液体形式的化合物喷雾在 微粒状态到支撑在反应室中的基板的表面，并且通过从反应室外部施加的能量分解微细状态的化合物，并在支撑在反应室中的基板上沉积硅膜。
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公开(公告)号：US5203925A
公开(公告)日：1993-04-20
申请号：US901555
申请日：1992-06-19
IPC分类号： C23C16/40 , C23C16/448
CPC分类号： C23C16/405 , C23C16/4481
摘要： An apparatus for producing a thin film of tantalum oxide comprising a vacuum chamber with a heater, an ampule of an organic tantalum compound, a container of a carrier gas, a container of an oxygen-containing gas, and a three way valve having a liquid inlet, a gas inlet and an outlet, the liquid inlet being connected with the ampule via a liquid flow controller, the gas inlet being connected with the containers of gas, the outlet being connected with the vacuum chamber, whereby the tantalum compound vaporized at the three way valve can obtain constant supply by the flow controller regardless of the ambient temperature, resulting in the tantalum oxide film of uniform quality.
摘要翻译： 一种氧化钽薄膜的制造装置，包括具有加热器的真空室，有机钽化合物的安瓿，载气的容器，含氧气体的容器，以及具有液体的三通阀 入口，气体入口和出口，液体入口通过液体流量控制器与安瓿连接，气体入口与气体容器连接，出口与真空室连接，由此钽化合物在 三通阀可以通过流量控制器获得恒定的供应，不管环境温度如何，导致氧化钽膜质量均匀。
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公开(公告)号：US5470398A
公开(公告)日：1995-11-28
申请号：US763674
申请日：1991-09-23
IPC分类号： C23C16/40 , H01L21/02 , H01L21/312
CPC分类号： H01L28/40 , C23C16/401
摘要： A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.
摘要翻译： 提供了可以用作半导体DRAM的电容器的绝缘层的电介质膜。 电介质膜由三种元素组成，即钛，硅和氧。 电介质膜具有高的介电常数和较小的漏电流。 该薄膜由氯化钛和氢化硅的原料以及O 2，N 2 O以及O 2和N 2 O的混合物中的至少一种制成，通过施加强电场等离子体分解原料。
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公开(公告)号：US5431733A
公开(公告)日：1995-07-11
申请号：US83300
申请日：1993-06-29
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/52 , C23C16/00
CPC分类号： C23C16/4482
摘要： A low vapor-pressure material feeding apparatus comprises a bubbler (4, 5), accommodating a low vapor-pressure material (6) therein, for bubbling the low vapor-pressure material (6) with an inert gas fed from an inert gas container (3). A bifurcated gas feeding passage (51, 8) is provided between the gas container (3) and a vacuum chamber (50). One branch passage directly introduces an inert gas into the vacuum chamber (50), and the other branch passage introduces an inert gas into the bubbler (4, 5). A gas mixture of a vaporized low vapor-pressure material (6) and the inert gas, is supplied from the bubbler (4, 5) to a vacuum chamber (50). A gas flow meter (7) detects a flow amount of the gas mixture. On a basis of a gas flow amount detected by the gas flow meter (7), an inert gas controller (10) adjusts a feeding amount of inert gas so that a total amount of an inert gas introduced directly into said vacuum chamber (50) and an inert gas introduced into the bubbler (4, 5) is kept at a constant value.
摘要翻译： 低蒸气压材料输送装置包括一个容纳低蒸气压材料（6）的起泡器（4,5），用于使惰性气体从惰性气体容器 （3）。 在气体容器（3）和真空室（50）之间设置有分支气体供给通路（51,8）。 一个分支通道直接将惰性气体引入真空室（50），另一个分支通道将惰性气体引入起泡器（4,5）中。 蒸发的低蒸气压材料（6）和惰性气体的气体混合物从起泡器（4,5）供应到真空室（50）。 气体流量计（7）检测气体混合物的流量。 基于由气体流量计（7）检测到的气体流量，惰性气体控制器（10）调节惰性气体的供给量，使得直接引入所述真空室（50）的惰性气体的总量， 引入起泡器（4,5）中的惰性气体保持恒定值。
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公开(公告)号：US06577386B2
公开(公告)日：2003-06-10
申请号：US09852656
申请日：2001-05-11
IPC分类号： H01L21263
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要翻译： 用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。 激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。 具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。
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公开(公告)号：US06255201B1
公开(公告)日：2001-07-03
申请号：US09341464
申请日：1999-07-12
IPC分类号： H01L2142
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要翻译： 用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。 激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。 具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。
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公开(公告)号：US6123774A
公开(公告)日：2000-09-26
申请号：US867487
申请日：1997-06-02
IPC分类号： H01L21/00 , H01L21/205 , H01L21/223 , H01L21/265 , H01L21/28 , H01L21/336 , H01J37/00
CPC分类号： H01L21/2236 , H01L21/67213 , H01L29/66765
摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
摘要翻译： 可以以高生产率制造大面积半导体元件，其在金属和半导体的边界面处具有低电阻并且具有优异的特性和可靠性。 一种制造装置包括：离子照射装置，用于在减压下的气氛中同时向半导体膜或基板中含有含有半导体的掺杂剂的氢离子和离子的离子和离子;以及成膜装置，其形成薄膜或 进行热处理而不将样品暴露于空气的热处理装置。 当通过打开闸阀将具有a-Si：H薄膜的样品送入样品制备室时，将室排出至内部压力为102至10 -3 Pa，然后将样品送至 离子照射室从样品制备室经过其中压力保持在10 -3至10 -7 Pa的范围的中间室，并且照射诸如磷的离子。 在离子照射之后，打开闸阀以将样品转移到中间室，然后打开闸阀以将样品转移到沉积室。 随后，将Ar气体进入沉积室，通过溅射法沉积Al / Ti的金属膜。 沉积后，样品通过中间室送到样品进样室。
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公开(公告)号：US5976919A
公开(公告)日：1999-11-02
申请号：US905052
申请日：1997-08-01
IPC分类号： H01L21/00 , H01L21/223 , H01L21/336 , H01L21/265 , H01L21/786
CPC分类号： H01L21/67213 , H01L21/2236 , H01L29/66765
摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
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公开(公告)号：US5141885A
公开(公告)日：1992-08-25
申请号：US709495
申请日：1991-06-03
IPC分类号： H01L29/78 , H01L21/223 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/2236 , H01L29/78669
摘要： A method of fabricating a thin film transistor on an insulating substrate such as quartz or glass without defect in the channel region in semiconductor thin layer, or at the boundary between the semiconductor thin layer and gate insulation layer, but with high mobility and high integration. For that purpose, ions produced by the discharge-decomposition of a hydride gas including dopant are accelerated and implanted into the semiconductor thin layer, wherein the protecting insulation layer for protection of the channel region is of a thickness larger than the projected range of the hydrogen ion.
摘要翻译： 在半导体薄层的沟道区域或半导体薄层与栅极绝缘层之间的边界处，但具有高移动性和高集成度的绝缘基板（例如石英或玻璃等）的绝缘基板上制造薄膜晶体管的方法。 为此，通过包括掺杂剂的氢化物气体的放电分解产生的离子被加速并注入到半导体薄层中，其中用于保护沟道区的保护绝缘层的厚度大于氢的投影范围 离子。
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