公开(公告)号：US5470398A

公开(公告)日：1995-11-28

申请号：US763674

申请日：1991-09-23

申请人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Takeshi Kamada ,  Takashi Hirao

发明人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Takeshi Kamada ,  Takashi Hirao

IPC分类号： C23C16/40 ,  H01L21/02 ,  H01L21/312

CPC分类号： H01L28/40 ,  C23C16/401

摘要： A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.

摘要翻译： 提供了可以用作半导体DRAM的电容器的绝缘层的电介质膜。 电介质膜由三种元素组成，即钛，硅和氧。 电介质膜具有高的介电常数和较小的漏电流。 该薄膜由氯化钛和氢化硅的原料以及O 2，N 2 O以及O 2和N 2 O的混合物中的至少一种制成，通过施加强电场等离子体分解原料。

公开(公告)号：US5431733A

公开(公告)日：1995-07-11

申请号：US83300

申请日：1993-06-29

申请人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Takeshi Kamada ,  Takashi Hirao

发明人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Takeshi Kamada ,  Takashi Hirao

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00

CPC分类号： C23C16/4482

摘要： A low vapor-pressure material feeding apparatus comprises a bubbler (4, 5), accommodating a low vapor-pressure material (6) therein, for bubbling the low vapor-pressure material (6) with an inert gas fed from an inert gas container (3). A bifurcated gas feeding passage (51, 8) is provided between the gas container (3) and a vacuum chamber (50). One branch passage directly introduces an inert gas into the vacuum chamber (50), and the other branch passage introduces an inert gas into the bubbler (4, 5). A gas mixture of a vaporized low vapor-pressure material (6) and the inert gas, is supplied from the bubbler (4, 5) to a vacuum chamber (50). A gas flow meter (7) detects a flow amount of the gas mixture. On a basis of a gas flow amount detected by the gas flow meter (7), an inert gas controller (10) adjusts a feeding amount of inert gas so that a total amount of an inert gas introduced directly into said vacuum chamber (50) and an inert gas introduced into the bubbler (4, 5) is kept at a constant value.

摘要翻译： 低蒸气压材料输送装置包括一个容纳低蒸气压材料（6）的起泡器（4,5），用于使惰性气体从惰性气体容器 （3）。 在气体容器（3）和真空室（50）之间设置有分支气体供给通路（51,8）。 一个分支通道直接将惰性气体引入真空室（50），另一个分支通道将惰性气体引入起泡器（4,5）中。 蒸发的低蒸气压材料（6）和惰性气体的气体混合物从起泡器（4,5）供应到真空室（50）。 气体流量计（7）检测气体混合物的流量。 基于由气体流量计（7）检测到的气体流量，惰性气体控制器（10）调节惰性气体的供给量，使得直接引入所述真空室（50）的惰性气体的总量， 引入起泡器（4,5）中的惰性气体保持恒定值。

公开(公告)号：US5203925A

公开(公告)日：1993-04-20

申请号：US901555

申请日：1992-06-19

申请人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Takeshi Kamada ,  Takashi Hirao ,  Hiroshi Nishizato

发明人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Takeshi Kamada ,  Takashi Hirao ,  Hiroshi Nishizato

IPC分类号： C23C16/40 ,  C23C16/448

CPC分类号： C23C16/405 ,  C23C16/4481

摘要： An apparatus for producing a thin film of tantalum oxide comprising a vacuum chamber with a heater, an ampule of an organic tantalum compound, a container of a carrier gas, a container of an oxygen-containing gas, and a three way valve having a liquid inlet, a gas inlet and an outlet, the liquid inlet being connected with the ampule via a liquid flow controller, the gas inlet being connected with the containers of gas, the outlet being connected with the vacuum chamber, whereby the tantalum compound vaporized at the three way valve can obtain constant supply by the flow controller regardless of the ambient temperature, resulting in the tantalum oxide film of uniform quality.

摘要翻译： 一种氧化钽薄膜的制造装置，包括具有加热器的真空室，有机钽化合物的安瓿，载气的容器，含氧气体的容器，以及具有液体的三通阀 入口，气体入口和出口，液体入口通过液体流量控制器与安瓿连接，气体入口与气体容器连接，出口与真空室连接，由此钽化合物在 三通阀可以通过流量控制器获得恒定的供应，不管环境温度如何，导致氧化钽膜质量均匀。

公开(公告)号：US5766342A

公开(公告)日：1998-06-16

申请号：US544016

申请日：1995-10-17

申请人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Yuji Mukai ,  Takashi Hirao ,  Akihisa Yoshida

发明人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Yuji Mukai ,  Takashi Hirao ,  Akihisa Yoshida

IPC分类号： C23C16/24 ,  C23C16/448 ,  C30B23/06

CPC分类号： C23C16/4486 ,  C23C16/24 ,  Y10T117/1024

摘要： The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.

摘要翻译： 本发明的形成硅膜的方法包括以下步骤：在常压和常温下将含有硅和氯的化合物以液体形式引入反应室中，并将液体形式的化合物喷雾在 微粒状态到支撑在反应室中的基板的表面，并且通过从反应室外部施加的能量分解微细状态的化合物，并在支撑在反应室中的基板上沉积硅膜。

公开(公告)号：US5672252A

公开(公告)日：1997-09-30

申请号：US483835

申请日：1995-06-15

申请人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  G02F1/00 ,  H01L21/314 ,  H01L21/316 ,  H01L37/02 ,  H01L41/316 ,  C23C14/34

CPC分类号： C23C14/5853 ,  C23C14/0078 ,  C23C14/088 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/314 ,  H01L21/31691 ,  H01L37/025 ,  H01L41/1875 ,  H01L41/316 ,  G02F1/0027

摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.

摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

公开(公告)号：US5674366A

公开(公告)日：1997-10-07

申请号：US483873

申请日：1995-06-07

申请人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  G02F1/00 ,  H01L21/314 ,  H01L21/316 ,  H01L37/02 ,  H01L41/316 ,  C23C14/34

CPC分类号： C23C14/5853 ,  C23C14/0078 ,  C23C14/088 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/314 ,  H01L21/31691 ,  H01L37/025 ,  H01L41/1875 ,  H01L41/316 ,  G02F1/0027

摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.

摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

公开(公告)号：US4800174A

公开(公告)日：1989-01-24

申请号：US50699

申请日：1987-05-18

申请人： Shinichiro Ishihara ,  Masatoshi Kitagawa ,  Takashi Hirao

发明人： Shinichiro Ishihara ,  Masatoshi Kitagawa ,  Takashi Hirao

IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/54 ,  H01L31/04

CPC分类号： C23C16/54 ,  C23C16/24 ,  Y10S148/025 ,  Y10S148/045 ,  Y10S148/072 ,  Y10S438/908

摘要： A method of producing an amorphous silicon semiconductor device makes use of a capacitance-coupled high-frequency glow-discharge semiconductor production apparatus which is equipped with a plurality of glow-discharge chambers each having a high-frequency electrode and a substrate holder opposing each other and means for supplying material gases to the glow-discharge chambers. A reaction of a material gas is effected in a first glow-discharge chamber, so as to form a semiconductor layer having a first conductivity type on a substrate introduced into the first glow-discharge chamber, and, after moving the substrate into a second glow-discharge chamber, a reaction of a material gas different from the material gas used in the first glow-discharge chamber is effected, thereby forming a semiconductor layer having a second conductivity type on the semiconductor layer of the first conductivity type. The substrate with the semiconductor layer of the first conductivity formed thereon is moved from the first glow-discharge chamber to the second glow-discharge chamber after a predetermined gas atmosphere is formed in the first glow-discharge chamber. The distance between the electrode and the substrate holder is made smaller in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers. The temperature of the substrate is set higher in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers.

摘要翻译： 一种非晶硅半导体器件的制造方法采用电容耦合高频辉光放电半导体制造装置，该装置配备有多个辉光放电室，每个辉光放电室具有彼此相对的高频电极和衬底保持器 以及用于将材料气体供应到辉光放电室的装置。 在第一辉光放电室中进行材料气体的反应，以便在引入第一辉光放电室的衬底上形成具有第一导电类型的半导体层，并且在将衬底移动到第二发光 进行与第一辉光放电室中使用的材料气体不同的原料气体的反应，由此在第一导电型半导体层上形成具有第二导电类型的半导体层。 在第一辉光放电室中形成规定的气体气氛之后，将形成有第一导电性的半导体层的基板从第一辉光放电室向第二辉光放电室移动。 在第一和第二辉光放电室之一中，电极和衬底保持器之间的距离较小，被设计用于形成第一和第二导电类型的较厚的一个半导体层，而不是第一和第二导电类型中的另一个， 第二个辉光放电室。 第一和第二辉光放电室之一的衬底的温度被设定为高于在第一和第二辉光放电中的另一个中形成第一和第二导电类型的较厚的一个半导体层的第一和第二辉光放电室 房间。

公开(公告)号：US4624045A

公开(公告)日：1986-11-25

申请号：US716604

申请日：1985-03-27

申请人： Shinichiro Ishihara ,  Takashi Hirao ,  Koshiro Mori ,  Masaharu Ono ,  Masatoshi Kitagawa

发明人： Shinichiro Ishihara ,  Takashi Hirao ,  Koshiro Mori ,  Masaharu Ono ,  Masatoshi Kitagawa

IPC分类号： H01L31/042 ,  H01L23/535 ,  H01L27/142 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/20 ,  H01L31/18 ,  H01L27/14

CPC分类号： H01L31/022425 ,  H01L23/535 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/202 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02P70/521

摘要： A thin film device such as an amorphous thin film solar battery is easily made with high integration by use of metal-diffused regions in the thin film as an electrical connection region across the thickness of the thin film. By use of such metal-diffused regions 24, 24 . . . for connection between transparent stripe shaped electrodes 21', 21'. . . disposed between glass substrate 20 and amorphous silicon thin film 23 and stripe shaped metal electrodes 25, 25 . . . on the top surface of the thin film 23, series connected solar battery cells can be made with a small number of process steps.

摘要翻译： 诸如非晶薄膜太阳能电池的薄膜器件通过在薄膜中的金属扩散区域作为跨越薄膜厚度的电连接区域的高集成度容易地制成。 通过使用这种金属扩散区域24,24。 。 。 用于透明条状电极21'，21'之间的连接。 。 。 设置在玻璃基板20和非晶硅薄膜23之间以及条状金属电极25,25之间。 。 。 在薄膜23的上表面上，串联的太阳能电池单元可以用少量的工艺步骤制成。

公开(公告)号：US6123774A

公开(公告)日：2000-09-26

申请号：US867487

申请日：1997-06-02

申请人： Takashi Hirao ,  Akihisa Yoshida ,  Masatoshi Kitagawa

发明人： Takashi Hirao ,  Akihisa Yoshida ,  Masatoshi Kitagawa

IPC分类号： H01L21/00 ,  H01L21/205 ,  H01L21/223 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01J37/00

CPC分类号： H01L21/2236 ,  H01L21/67213 ,  H01L29/66765

摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.

摘要翻译： 可以以高生产率制造大面积半导体元件，其在金属和半导体的边界面处具有低电阻并且具有优异的特性和可靠性。 一种制造装置包括：离子照射装置，用于在减压下的气氛中同时向半导体膜或基板中含有含有半导体的掺杂剂的氢离子和离子的离子和离子;以及成膜装置，其形成薄膜或 进行热处理而不将样品暴露于空气的热处理装置。 当通过打开闸阀将具有a-Si：H薄膜的样品送入样品制备室时，将室排出至内部压力为102至10 -3 Pa，然后将样品送至 离子照射室从样品制备室经过其中压力保持在10 -3至10 -7 Pa的范围的中间室，并且照射诸如磷的离子。 在离子照射之后，打开闸阀以将样品转移到中间室，然后打开闸阀以将样品转移到沉积室。 随后，将Ar气体进入沉积室，通过溅射法沉积Al / Ti的金属膜。 沉积后，样品通过中间室送到样品进样室。

公开(公告)号：US5976919A

公开(公告)日：1999-11-02

申请号：US905052

申请日：1997-08-01

申请人： Takashi Hirao ,  Akihisa Yoshida ,  Masatoshi Kitagawa

发明人： Takashi Hirao ,  Akihisa Yoshida ,  Masatoshi Kitagawa

IPC分类号： H01L21/00 ,  H01L21/223 ,  H01L21/336 ,  H01L21/265 ,  H01L21/786

CPC分类号： H01L21/67213 ,  H01L21/2236 ,  H01L29/66765

摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.