公开(公告)号：US06773950B2

公开(公告)日：2004-08-10

申请号：US10156666

申请日：2002-05-24

申请人： David M. Tanenbaum ,  Yi-Fan Chen

发明人： David M. Tanenbaum ,  Yi-Fan Chen

IPC分类号： H01L2142

CPC分类号： B81B1/00

摘要： Nano structures are formed in a glass layer on a substrate by defining a first structure in the glass layer using a low energy radiation exposure, and then defining a second structure in the glass layer for the dynamic layer using a higher energy radiation exposure. The structures are then developed in TMAH. The structures include at least sensors and nano-channels. Densification is performed by converting the structures to SiO2. Further structures are formed by using different energy exposures. One structure is a channel having a porous wall prior to development.

摘要翻译： 通过使用低能量辐射暴露限定玻璃层中的第一结构，然后在玻璃层中使用更高的能量辐射曝光限定动态层的第二结构，在衬底上的玻璃层中形成纳米结构。 然后在TMAH中开发结构。 该结构至少包括传感器和纳米通道。 通过将结构转化为SiO 2进行致密化。 通过使用不同的能量曝光形成其它结构。 一种结构是在显影之前具有多孔壁的通道。

公开(公告)号：US06635589B2

公开(公告)日：2003-10-21

申请号：US09286999

申请日：1999-04-07

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

IPC分类号： H01L2142

CPC分类号： H01L21/28158 ,  C23C14/58 ,  C23C16/56 ,  H01L29/66757 ,  Y10S438/909 ,  Y10S438/91 ,  Y10S438/958

摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C. in a hydrogen nitride atmosphere (N2O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.

摘要翻译： 作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法对形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。 在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。 此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在由硅膜的活性层上形成的氧化硅膜在300-700°的温度下进行热处理而形成 在氮氧化物气氛（N 2 O气氛）中在N2O气氛（或氮化氢气氛）中照射紫外线，然后在300-700℃下进行热处理，并减少氢和碳的量 在氧化硅膜中，特别是将氮引入与硅膜的边界。

公开(公告)号：US06255201B1

公开(公告)日：2001-07-03

申请号：US09341464

申请日：1999-07-12

申请人： Akihisa Yoshida ,  Masatoshi Kitagawa ,  Masao Uchida ,  Makoto Kitabatake ,  Tsuneo Mitsuyu

发明人： Akihisa Yoshida ,  Masatoshi Kitagawa ,  Masao Uchida ,  Makoto Kitabatake ,  Tsuneo Mitsuyu

IPC分类号： H01L2142

CPC分类号： H01L29/6606 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/861 ,  Y10T29/41

摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.

摘要翻译： 用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。 激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。 具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。

公开(公告)号：US06251795B1

公开(公告)日：2001-06-26

申请号：US09288490

申请日：1999-04-08

申请人： Jesse C. Shan ,  Chang-Kuei Huang ,  Steve H. Y. Yang

发明人： Jesse C. Shan ,  Chang-Kuei Huang ,  Steve H. Y. Yang

IPC分类号： H01L2142

CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31051 ,  H01L21/31612

摘要： A method of forming a self-planarized HDPCVD oxide layer over a substrate having uneven topography in a process chamber is disclosed. The method comprising the steps of: depositing HDPCVD oxide over said uneven topography; and performing a sputter-only step in said process chamber.

摘要翻译： 公开了一种在处理室中具有不均匀的地形的衬底上形成自平面化HDPCVD氧化物层的方法。 该方法包括以下步骤：在所述不平坦的形貌上沉积HDPCVD氧化物; 以及在所述处理室中执行仅溅射步骤。

公开(公告)号：US06818476B2

公开(公告)日：2004-11-16

申请号：US10079864

申请日：2002-02-21

申请人： Masahiro Yonemochi

发明人： Masahiro Yonemochi

IPC分类号： H01L2142

CPC分类号： H01L23/4334 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01039 ,  H01L2924/12041 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A heat spreader adapted to be insert-molded with resin on a surface of a circuit board on which a semiconductor chip is mounted so that the heat spreader covers the surface of the circuit board including an upper surface of the semiconductor chip over substantially a same area as that covered with molded resin when insert-molded with resin. The heat spreader has a main-portion which defines a larger gap with respect to the surface of the circuit board when insert-molded with resin and a sub-portion which defines a smaller gap with respect to the surface of the circuit board when insert-molded with resin. The sub-portion is embedded in the mold resin when insert-molded with resin so that the heat spreader is strongly adhered to the resin.

摘要翻译： 一种适于在其上安装有半导体芯片的电路板的表面上插入模塑树脂的散热器，使得散热器覆盖电路板的包括半导体芯片的上表面在大致相同的区域上的表面 当用树脂嵌入成型时被模制树脂覆盖。 散热器具有主要部分，当插入模制树脂时，相对于电路板的表面限定更大的间隙，并且当插入 - 插入时，限定相对于电路板的表面限定较小间隙的子部分， 用树脂模制。 当用树脂嵌入成型时，该子部分嵌入模制树脂中，使得散热器牢固地粘附在树脂上。

公开(公告)号：US06815376B2

公开(公告)日：2004-11-09

申请号：US10172611

申请日：2002-06-14

申请人： Ming-Hung Tsai

发明人： Ming-Hung Tsai

IPC分类号： H01L2142

CPC分类号： H01L21/6708 ,  G03F7/168 ,  G03F7/2028

摘要： Within an edge bead processing apparatus and an edge bead processing method, there is employed at least one of: (1) a nozzle suitable for directing a volume of fluid onto an annular edge ring of a substrate when received upon a platen, wherein the nozzle is geometrically configured to direct the volume of fluid simultaneously to all portions of the annular edge ring absent motion of the substrate with respect to the nozzle; and (2) a reflective optical apparatus suitable for directing a dose of radiation to the annular edge ring of the substrate when received upon the platen, wherein the reflective optical apparatus is geometrically configured to direct the dose of radiation to all portions of the annular edge ring absent movement of the substrate with respect to the reflective optical apparatus.

摘要翻译： 在边缘珠加工装置和边缘珠加工方法中，采用以下至少一个：（1）适于在容纳在压板上时将一定体积的流体引导到基板的环形边缘环上的喷嘴，其中喷嘴 几何形状地构造成将流体的体积同时引导到环形边缘环的所有部分，而不是衬底相对于喷嘴的运动; 以及（2）反射光学装置，其适于在接收在所述压板上时将辐射剂量引导到所述衬底的所述环形边缘环，其中所述反射光学装置被几何构造成将所述辐射剂量引导到所述环形边缘的所有部分 使基板相对于反射光学装置无环移动。

公开(公告)号：US06632729B1

公开(公告)日：2003-10-14

申请号：US10163455

申请日：2002-06-07

申请人： Eric N. Paton

发明人： Eric N. Paton

IPC分类号： H01L2142

CPC分类号： H01L29/513 ,  H01L21/268 ,  H01L21/28176 ,  H01L21/28194 ,  H01L29/517

摘要： A method of manufacturing a semiconductor device, comprising the steps of: (a) providing a semiconductor substrate having a surface; (b) forming a gate oxide layer on at least a portion of the surface and including an interface therewith, the gate oxide layer comprising a high-k dielectric oxide including a plurality of interface traps at the interface; (c) forming a gate electrode layer on at least a portion of the gate oxide layer; and (d) laser thermal annealing the high-k gate oxide layer to de-activate the interface traps without incurring formation of a low-k dielectric oxide layer at the interface.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（a）提供具有表面的半导体衬底;（b）在表面的至少一部分上形成栅极氧化物层，并且包括 与其界面，所述栅极氧化物层包括在所述界面处包括多个界面陷阱的高k电介质氧化物;（c）在所述栅极氧化物层的至少一部分上形成栅极电极层; （d）激光热退火高k栅极氧化层以去激活界面陷阱，而不会在界面处形成低k电介质氧化物层。

公开(公告)号：US06432848B1

公开(公告)日：2002-08-13

申请号：US09769386

申请日：2001-01-26

申请人： Toshimitsu Akane ,  Koji Sugioka ,  Katsumi Midorikawa ,  Jan J. Dubowski

发明人： Toshimitsu Akane ,  Koji Sugioka ,  Katsumi Midorikawa ,  Jan J. Dubowski

IPC分类号： H01L2142

摘要： A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.