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公开(公告)号：US20210328103A1
公开(公告)日：2021-10-21
申请号：US17264320
申请日：2019-07-31
Applicant: OSRAM OLED GMBH
Inventor： André Steiner , Christine RAFAEL , Paola Altieri-Weimar
Abstract: A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.
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公开(公告)号：US11450794B2
公开(公告)日：2022-09-20
申请号：US16639722
申请日：2018-07-23
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Michael Zitzlsperger , Stefan Groetsch , Holger Klassen
Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.
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Patent Agency Ranking
公开(公告)号：US20200235271A1
公开(公告)日：2020-07-23
申请号：US16639722
申请日：2018-07-23
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Michael Zitzlsperger , Stefan Groetsch , Holger Klassen
Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.
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公开(公告)号：US12057539B2
公开(公告)日：2024-08-06
申请号：US17055040
申请日：2019-04-02
Applicant: OSRAM OLED GmbH
Inventor： Andreas Reith , Paola Altieri-Weimar
CPC classification number: H01L33/62 , H01L25/167 , H01L33/486
Abstract: The invention relates to an optoelectronic component having: a carrier; an optoelectronic semiconductor chip; an insulation layer, which has an electrically insulating material; and a first contact layer, which has an electrically conductive material. According to the invention, the insulation layer is arranged on the carrier and has a cavity; the semiconductor chip is arranged in the cavity; the first contact layer is arranged between the semiconductor chip and the carrier and between the insulation layer and the carrier; and the first contact layer has at least one interruption, such that the carrier is free of the first contact layer at least in some parts in the region of the cavity.
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公开(公告)号：US20200227604A1
公开(公告)日：2020-07-16
申请号：US16640062
申请日：2018-07-19
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Andreas Ploessl , Marcus Zenger
Abstract: A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.
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公开(公告)号：US12206044B2
公开(公告)日：2025-01-21
申请号：US17264320
申请日：2019-07-31
Applicant: OSRAM OLED GMBH
Inventor： André Steiner , Christine Rafael , Paola Altieri-Weimar
Abstract: A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.
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公开(公告)号：US11183621B2
公开(公告)日：2021-11-23
申请号：US16640062
申请日：2018-07-19
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Andreas Ploessl , Marcus Zenger
Abstract: A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.
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