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公开(公告)号：US10014444B2
公开(公告)日：2018-07-03
申请号：US14905763
申请日：2014-06-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Karl Engl , Georg Hartung , Johann Eibl , Michael Huber , Markus Maute
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/62 , H01L2933/0025
Abstract: An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.
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公开(公告)号：US09761770B2
公开(公告)日：2017-09-12
申请号：US14760454
申请日：2014-01-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Johann Eibl , Sebastian Taeger , Lutz Höppel , Karl Engl , Stefanie Rammelsberger , Markus Maute , Michael Huber , Rainer Hartmann , Georg Hartung
CPC classification number: H01L33/54 , G01B2210/306 , H01L21/0228 , H01L33/405 , H01L33/44 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/181 , H01L2933/005 , H01L2924/00
Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.
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3.发明申请Optoelectronic Semiconductor Chip Encapsulated with an ALD Layer and Corresponding Method for Production 有权用ALD层封装的光电半导体芯片和相应的生产方法公开(公告)号：US20150372203A1
公开(公告)日：2015-12-24
申请号：US14760454
申请日：2014-01-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Johann Eibl , Sebastian Taeger , Lutz Höppel , Karl Engl , Stefanie Rammelsberger , Markus Maute , Michael Huber , Rainer Hartmann , Georg Hartung
CPC classification number: H01L33/54 , G01B2210/306 , H01L21/0228 , H01L33/405 , H01L33/44 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/181 , H01L2933/005 , H01L2924/00
Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.
Abstract translation: 光电子半导体芯片包括具有用于产生电磁辐射的有源区的半导体本体，用于反射电磁辐射的第一镜层，用电绝缘材料形成的第一封装层，以及用于机械地支撑第一封装的载体 第一镜层和半导体本体。 第一镜层布置在载体和半导体本体之间。 第一封装层布置在载体和第一反射镜层之间。 第一封装层是ALD层。
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公开(公告)号：US20160172545A1
公开(公告)日：2016-06-16
申请号：US14905763
申请日：2014-06-25
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Karl Engl , Georg Hartung , Johann Eibl , Michael Huber , Markus Maute
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/62 , H01L2933/0025
Abstract: An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.
Abstract translation: 公开了一种光电半导体芯片，其中作为ALD层的封装层在其背离p导电区域的一侧完全覆盖第一镜层，并被布置成与所述第一 镜像层在一些部分。
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