MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS
    1.
    发明申请
    MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS 有权
    具有多个精度读取命令的存储器件

    公开(公告)号:US20090240872A1

    公开(公告)日:2009-09-24

    申请号:US12405275

    申请日:2009-03-17

    IPC分类号: G06F12/00 G06F12/02 G11C11/34

    摘要: A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.

    摘要翻译: 一种用于数据存储的方法包括至少定义用于从模拟存储器单元读取存储值的第一和第二读取命令。 第一读取命令以第一精度读取存储值,并且第二读取命令以比第一精度更精细的第二精度读取存储值。 针对要在特定组的存储单元上执行的读取操作来评估条件。 响应于评估条件选择第一和第二读取命令中的一个。 使用所选择的读取命令从存储器单元的给定组中读取存储值。

    PROGRAMMING SCHEMES FOR MULTI-LEVEL ANALOG MEMORY CELLS
    2.
    发明申请
    PROGRAMMING SCHEMES FOR MULTI-LEVEL ANALOG MEMORY CELLS 有权
    多级模拟记忆细胞的编程方案

    公开(公告)号:US20090043951A1

    公开(公告)日:2009-02-12

    申请号:US12186867

    申请日:2008-08-06

    IPC分类号: G06F12/02

    摘要: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

    摘要翻译: 一种用于数据存储的方法包括:通过对存储器单元进行编程来采用各自的第一编程级别,来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

    Programming schemes for multi-level analog memory cells
    3.
    发明授权
    Programming schemes for multi-level analog memory cells 有权
    多级模拟存储单元的编程方案

    公开(公告)号:US08259497B2

    公开(公告)日:2012-09-04

    申请号:US12186867

    申请日:2008-08-06

    摘要: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

    摘要翻译: 一种用于数据存储的方法包括:通过对存储器单元进行编程来采用各自的第一编程级别,来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

    Memory device with multiple-accuracy read commands
    4.
    发明授权
    Memory device with multiple-accuracy read commands 有权
    具有多重精度读取命令的存储器件

    公开(公告)号:US08059457B2

    公开(公告)日:2011-11-15

    申请号:US12405275

    申请日:2009-03-17

    IPC分类号: G11C11/34

    摘要: A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.

    摘要翻译: 一种用于数据存储的方法包括至少定义用于从模拟存储器单元读取存储值的第一和第二读取命令。 第一读取命令以第一精度读取存储值,并且第二读取命令以比第一精度更精细的第二精度读取存储值。 针对要在特定组的存储单元上执行的读取操作来评估条件。 响应于评估条件选择第一和第二读取命令中的一个。 使用所选择的读取命令从存储器单元的给定组中读取存储值。

    Efficient data storage in multi-plane memory devices
    5.
    发明授权
    Efficient data storage in multi-plane memory devices 有权
    在多平面存储设备中高效的数据存储

    公开(公告)号:US08456905B2

    公开(公告)日:2013-06-04

    申请号:US12332370

    申请日:2008-12-11

    IPC分类号: G11C11/34

    摘要: A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.

    摘要翻译: 一种用于数据存储的方法包括:首先将数据页序列存储在包括多个存储器阵列的存储器中,使得序列中的连续数据页被交替地存储在第一数量的存储器阵列中。 将初始存储的数据页重新排列在存储器中,以便将序列中的连续数据页存储在小于第一数量的第二数量的存储器阵列中。 从第二数量的存储器阵列中读取重新排列的数据页。

    EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES
    6.
    发明申请
    EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES 有权
    多平面存储器件中的有效数据存储

    公开(公告)号:US20090157964A1

    公开(公告)日:2009-06-18

    申请号:US12332370

    申请日:2008-12-11

    IPC分类号: G06F12/02 G06F12/08

    摘要: A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.

    摘要翻译: 一种用于数据存储的方法包括:首先将数据页序列存储在包括多个存储器阵列的存储器中,使得序列中的连续数据页被交替地存储在第一数量的存储器阵列中。 将初始存储的数据页重新排列在存储器中,以便将序列中的连续数据页存储在小于第一数量的第二数量的存储器阵列中。 从第二数量的存储器阵列中读取重新排列的数据页。

    Adaptive over-provisioning in memory systems
    7.
    发明授权
    Adaptive over-provisioning in memory systems 有权
    内存系统中的自适应过度配置

    公开(公告)号:US08479080B1

    公开(公告)日:2013-07-02

    申请号:US12822207

    申请日:2010-06-24

    IPC分类号: H03M13/00

    摘要: A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead.

    摘要翻译: 一种用于数据存储的方法包括在包括多个存储器块的存储器中,在第一时间指定第一过度供应开销,并且将数据存储在存储器中,同时保留存储器块,其不保存有效数据, 其聚合大小至少与指定的第一超额配置开销相称。 包含一个或多个保留的存储区域的一个或多个预先编程的存储块的数据的部分被压缩。 在第一次之后的第二时间,指定与第一过度供应开销不同的第二过度供应开销,并且在遵循第二过度供应开销的同时继续数据存储和数据部分压缩。

    Programming Schemes for Multi-Level Analog Memory Cells
    10.
    发明申请
    Programming Schemes for Multi-Level Analog Memory Cells 有权
    多级模拟存储单元的编程方案

    公开(公告)号:US20120297270A1

    公开(公告)日:2012-11-22

    申请号:US13566372

    申请日:2012-08-03

    IPC分类号: G11C16/10 G06F11/10 H03M13/05

    摘要: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

    摘要翻译: 一种用于数据存储的方法包括:通过对存储器单元进行编程来采用各自的第一编程级别,来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。