公开(公告)号：US20100001203A1

公开(公告)日：2010-01-07

申请号：US12495050

申请日：2009-06-30

申请人： Takahito Nakayama ,  Kenji Ohtoshi ,  Osamu Iizuka ,  Shunji Shinkawa

发明人： Takahito Nakayama ,  Kenji Ohtoshi ,  Osamu Iizuka ,  Shunji Shinkawa

IPC分类号： H01J3/26 ,  G21K5/00

CPC分类号： H01J37/222 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/1472 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/0455 ,  H01J2237/0835 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/3175

摘要： A method of acquiring an offset deflection amount for a shaped beam, includes forming reference images of first and second figures which can be shaped by first and second aperture plates placed on a lithography apparatus; forming, using design data of a mark, a reference image of the mark; forming a first convolution reference image obtained by a convolution calculation of the reference image of the mark and the reference image of the first figure and a second convolution reference image obtained by a convolution calculation of the reference image of the mark and the reference image of the second figure; respectively scanning over the mark with charged particle beams having shaped into the first and second figures by using the first and second aperture plates to acquire optical images of the first and second figures; forming a first convolution synthesis image obtained by a convolution calculation of the first convolution reference image and the optical image of the first figure and a second convolution synthesis image obtained by a convolution calculation of the second convolution reference image and the optical image of the second figure; calculating center-of-gravity positions of the first and second convolution synthesis images; and calculating an offset deflection amount for the charged particle beam having shaped into the second figure to match reference positions of the first and second figures based on the center-of-gravity positions of the first and second convolution synthesis images to output a result calculated.

摘要翻译： 获得成形光束的偏移偏移量的方法包括：形成第一和第二图形的参考图像，第一和第二图形可由放置在光刻设备上的第一和第二孔板进行成形; 使用标记的设计数据形成，标记的参考图像; 形成通过所述标记的参考图像和所述第一图形的参考图像的卷积计算获得的第一卷积参考图像和通过所述标记的参考图像和所述标记的参考图像的卷积计算而获得的第二卷积参考图像 第二个数字 通过使用第一和第二孔板分别在具有成形为第一和第二图形的带电粒子束上扫描标记，以获取第一和第二图形的光学图像; 形成通过第一卷积参考图像和第一图形的光学图像的卷积计算获得的第一卷积合成图像和通过第二卷积参考图像和第二图形的光学图像的卷积计算获得的第二卷积合成图像 ; 计算第一和第二卷积合成图像的重心位置; 以及基于所述第一和第二卷积合成图像的重心位置计算已经成形为所述第二图形的带电粒子束的偏移偏移量以匹配所述第一和第二图形的参考位置，以输出计算的结果。

公开(公告)号：US08253112B2

公开(公告)日：2012-08-28

申请号：US12489606

申请日：2009-06-23

申请人： Osamu Iizuka ,  Kenji Ohtoshi

发明人： Osamu Iizuka ,  Kenji Ohtoshi

IPC分类号： G21K5/04

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/24578 ,  H01J2237/3045

摘要： A lithography apparatus includes a unit irradiating a charged particle beam; first and second aperture plate members configured to shape the beam; first and second coils configured to be arranged between the unit and the first aperture plate member, to temporarily deflect the beam, to change a direction of the beam after the temporarily deflecting, and to deflect the beam to a position where the beam passes through the first aperture plate member by the changing; a lens configured to be arranged between the first and second aperture plate members and to control a focal position of the beam having passed through the first aperture plate member; and a unit configured to calculate a difference between positions of the beam on the second aperture plate member obtained by different sets of amounts of deflection at a same focal position when a combination of one of focal positions of the beam controlled by the lens and one of sets of amounts of deflection of the beam obtained by the first and second coils is changed.

摘要翻译： 光刻设备包括：照射带电粒子束的单元; 第一和第二孔板构件，其构造成使梁成形; 第一和第二线圈被配置为布置在单元和第一孔板构件之间，以暂时偏转光束，以在暂时偏转之后改变光束的方向，并且将光束偏转到光束通过的位置 第一孔板构件通过改变; 配置为布置在第一和第二孔板构件之间并且控制已经穿过第一孔板构件的梁的焦点位置的透镜; 以及单元，其被配置为当由所述透镜控制的光束的焦点位置的一个组合与所述透镜控制的光束中的一个的组合时，计算在相同焦点位置处通过不同组的偏转量获得的所述第二光阑板部件上的光束的位置之间的差异 改变由第一和第二线圈获得的光束的偏转量的集合。

公开(公告)号：US08188443B2

公开(公告)日：2012-05-29

申请号：US12043707

申请日：2008-03-06

申请人： Kenji Ohtoshi ,  Hitoshi Sunaoshi ,  Osamu Iizuka ,  Takahito Nakayama

发明人： Kenji Ohtoshi ,  Hitoshi Sunaoshi ,  Osamu Iizuka ,  Takahito Nakayama

IPC分类号： H01J3/14

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/304 ,  H01J2237/1532 ,  H01J2237/216

摘要： A focusing method of a charged particle beam includes measuring a first set value to focus a beam on a position of a reference plane by using a lens coil, acquiring a first factor to change a set value of an electrostatic lens depending on a distance and a second factor to change a set value of the coil depending on a distance, measuring a level distribution of a target plane, correcting the first set value by using the second factor to correct a focal point position of the beam in the coil from the position of the reference plane to an intermediate level position of the level distribution of the target plane, and correcting a second set value of the lens depending on a level position of the target plane by using the first factor to correct a focal point position of the beam by the lens.

摘要翻译： 带电粒子束的聚焦方法包括测量第一设定值以通过使用透镜线圈将光束聚焦在参考平面的位置上，获取根据距离改变静电透镜的设定值的第一因素，以及 根据距离来改变线圈的设定值的第二因素，测量目标平面的电平分布，通过使用第二因素校正第一设定值，以从线圈的位置校正线圈中的焦点位置 所述基准平面与所述目标平面的水平分布的中间位置相对应，并且通过使用所述第一因子来校正所述目标平面的水平位置的所述透镜的第二设定值，以通过所述第一因子校正所述光束的焦点位置 镜头。

公开(公告)号：US08008631B2

公开(公告)日：2011-08-30

申请号：US12495050

申请日：2009-06-30

申请人： Takahito Nakayama ,  Kenji Ohtoshi ,  Osamu Iizuka ,  Shunji Shinkawa

发明人： Takahito Nakayama ,  Kenji Ohtoshi ,  Osamu Iizuka ,  Shunji Shinkawa

IPC分类号： H01J3/26 ,  H01J37/20

CPC分类号： H01J37/222 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/1472 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/0455 ,  H01J2237/0835 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/3175

摘要： A method of acquiring an offset deflection amount for a shaped beam, includes forming reference images of first and second figures which can be shaped by first and second aperture plates placed on a lithography apparatus, and a reference image of a mark; forming first and second convolution reference images based on the reference images of the mark and of the first and second figures; scanning over the mark with charged particle beams shaped into the first and second figures to acquire optical images of the first and second figures; forming first and second convolution synthesis images based on the first convolution reference image and respectively the optical images of the first and second figures; and calculating an offset deflection amount for the charged particle beam shaped into the second figure to match reference positions of the first and second figures based on center-of-gravity positions of the first and second convolution synthesis images.

摘要翻译： 一种获取成形光束的偏移偏移量的方法，包括：形成可由放置在光刻设备上的第一和第二孔板形成的第一和第二图形的参考图像和标记的参考图像; 基于标记的参考图像和第一和第二图形形成第一和第二卷积参考图像; 在形成第一和第二图形的带电粒子束上扫描标记以获取第一和第二图形的光学图像; 基于第一卷积参考图像和第一和第二图形的光学图像分别形成第一和第二卷积合成图像; 以及基于所述第一和第二卷积合成图像的重心位置，计算形成所述第二图形的带电粒子束的偏移偏移量，以匹配所述第一和第二图形的参考位置。

公开(公告)号：US20090314950A1

公开(公告)日：2009-12-24

申请号：US12489606

申请日：2009-06-23

申请人： Osamu IIZUKA ,  Kenji Ohtoshi

发明人： Osamu IIZUKA ,  Kenji Ohtoshi

IPC分类号： H01J3/26 ,  H01J3/14

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/24578 ,  H01J2237/3045

摘要： A lithography apparatus includes a unit irradiating a charged particle beam; first and second aperture plate members configured to shape the beam; first and second coils configured to be arranged between the unit and the first aperture plate member, to temporarily deflect the beam, to change a direction of the beam after the temporarily deflecting, and to deflect the beam to a position where the beam passes through the first aperture plate member by the changing; a lens configured to be arranged between the first and second aperture plate members and to control a focal position of the beam having passed through the first aperture plate member; and a unit configured to calculate a difference between positions of the beam on the second aperture plate member obtained by different sets of amounts of deflection at a same focal position when a combination of one of focal positions of the beam controlled by the lens and one of sets of amounts of deflection of the beam obtained by the first and second coils is changed.

摘要翻译： 光刻设备包括：照射带电粒子束的单元; 第一和第二孔板构件，其构造成使梁成形; 第一和第二线圈被配置为布置在单元和第一孔板构件之间，以暂时偏转光束，以在暂时偏转之后改变光束的方向，并且将光束偏转到光束通过的位置 第一孔板构件通过改变; 配置为布置在第一和第二孔板构件之间并且控制已经穿过第一孔板构件的梁的焦点位置的透镜; 以及单元，其被配置为当由所述透镜控制的光束的焦点位置的一个组合与所述透镜控制的光束中的一个的组合时，计算在相同焦点位置处通过不同组的偏转量获得的所述第二光阑板部件上的光束的位置之间的差异 改变由第一和第二线圈获得的光束的偏转量的集合。

公开(公告)号：US20080217553A1

公开(公告)日：2008-09-11

申请号：US12043707

申请日：2008-03-06

申请人： Kenji Ohtoshi ,  Hitoshi Sunaoshi ,  Osamu Iizuka ,  Takahito Nakayama

发明人： Kenji Ohtoshi ,  Hitoshi Sunaoshi ,  Osamu Iizuka ,  Takahito Nakayama

IPC分类号： H01J3/14

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/304 ,  H01J2237/1532 ,  H01J2237/216

摘要： A focusing method of a charged particle beam includes measuring a first set value to focus a beam on a position of a reference plane by using a lens coil, acquiring a first factor to change a set value of an electrostatic lens depending on a distance and a second factor to change a set value of the coil depending on a distance, measuring a level distribution of a target plane, correcting the first set value by using the second factor to correct a focal point position of the beam in the coil from the position of the reference plane to an intermediate level position of the level distribution of the target plane, and correcting a second set value of the lens depending on a level position of the target plane by using the first factor to correct a focal point position of the beam by the lens.

摘要翻译： 带电粒子束的聚焦方法包括测量第一设定值以通过使用透镜线圈将光束聚焦在参考平面的位置上，获取根据距离改变静电透镜的设定值的第一因素，以及 根据距离来改变线圈的设定值的第二因素，测量目标平面的电平分布，通过使用第二因素校正第一设定值，以从线圈的位置校正线圈中的焦点位置 所述基准平面与所述目标平面的水平分布的中间位置相对应，并且通过使用所述第一因子来校正所述目标平面的水平位置的所述透镜的第二设定值，以通过所述第一因子校正所述光束的焦点位置 镜头。

公开(公告)号：US07679068B2

公开(公告)日：2010-03-16

申请号：US11617165

申请日：2006-12-28

申请人： Takashi Kamikubo ,  Shuichi Tamamushi ,  Hitoshi Sunaoshi ,  Kenji Ohtoshi ,  Rieko Nishimura

发明人： Takashi Kamikubo ,  Shuichi Tamamushi ,  Hitoshi Sunaoshi ,  Kenji Ohtoshi ,  Rieko Nishimura

IPC分类号： G21K5/10 ,  G01D5/00

CPC分类号： G01K1/08 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31776

摘要： A method of obtaining a deflection aberration correcting voltage. The method includes writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable. Dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable are measured. Further, effective resolutions of the written predetermined patterns are calculated by using the dimensional variations. The method further includes, on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage. The correcting voltage is used when a charged particle beam is deflected.

摘要翻译： 一种获得偏转像差校正电压的方法。 该方法包括在多个焦点高度位置处写入预定图案，使得剂量被用作变量。 测量在多个焦点高度位置处写入的预定图案的宽度尺寸的尺寸变化，使得剂量用作变量。 此外，通过使用尺寸变化来计算书写的预定图案的有效分辨率。 该方法还包括：基于获得预定图案的最小有效分辨率的焦点高度位置，计算校正电压以校正偏转像差并输出校正电压。 当带电粒子束偏转时使用校正电压。

公开(公告)号：US07521689B2

公开(公告)日：2009-04-21

申请号：US11671152

申请日：2007-02-05

申请人： Yoshimasa Sanmiya ,  Kenji Ohtoshi ,  Tetsuro Nishiyama

发明人： Yoshimasa Sanmiya ,  Kenji Ohtoshi ,  Tetsuro Nishiyama

IPC分类号： H01J37/30

CPC分类号： H01J37/1477 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： A deflector for an equipment of electron beam lithography, the deflector including a plurality of control electrodes arranged symmetrically relative to the center axis of an irradiated electron beam, the electrodes configured to control the electron beam by applying voltages respectively, a plurality of molding substrates arranged symmetrically relative to the center axis of the electron beam configured to face outer peripheral surfaces of the plurality of control electrodes and a plurality of earth electrodes arranged respectively at the plurality of molding substrates. The deflector can suppress generation of cross talks with an improved accuracy of controlling an electron beam.

摘要翻译： 一种用于电子束光刻设备的偏转器，所述偏转器包括相对于照射的电子束的中心轴对称布置的多个控制电极，所述电极被配置为通过分别施加电压来控制电子束;多个成型基板布置 对应于构成为面对多个控制电极的外周面的电子束的中心轴线以及分别布置在多个成型基板上的多个接地电极。 偏转器可以抑制电子束控制精度的提高。

公开(公告)号：US07476881B2

公开(公告)日：2009-01-13

申请号：US11560127

申请日：2006-11-15

申请人： Kiyoshi Hattori ,  Kenji Ohtoshi ,  Tomohiro Iijima ,  Yoshiaki Onimaru ,  Hayato Kimura ,  Tateki Watanabe

发明人： Kiyoshi Hattori ,  Kenji Ohtoshi ,  Tomohiro Iijima ,  Yoshiaki Onimaru ,  Hayato Kimura ,  Tateki Watanabe

IPC分类号： G21K5/04

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31793

摘要： There is provided a charged beam drawing apparatus which includes main/sub two-stage deflectors, divides a main deflection drawing region on a sample into sub deflection drawing regions determined by the deflection width of the sub deflector, selects one of the sub deflection drawing regions by use of the main deflector and draws shots in the selected sub deflection drawing region by use of the sub deflector. A sub deflection driving unit includes a sub deflection sensitivity correction circuit, a sub deflection astigmatic correction circuit, an adder circuit which adds an output of the sub deflection sensitivity correction circuit and an output of the sub deflection astigmatic correction circuit, and a deflection amplifier which additionally applies an output of the adder circuit to the sub deflector.

摘要翻译： 提供了一种带电束的拉伸装置，其包括主/次两级偏转器，将样品上的主偏转绘制区域划分成由次偏转器的偏转宽度确定的次偏转绘图区域，选择一个子偏转绘图区域 通过使用主偏转器，并且通过使用副偏转器在所选择的亚偏转绘图区域中绘制照片。 副偏转驱动单元包括副偏转灵敏度校正电路，副偏转像散校正电路，将副偏转灵敏度校正电路的输出和副偏转像散校正电路的输出相加的加法电路，以及偏转放大器， 另外将加法器电路的输出施加到副偏转器。

公开(公告)号：US5949076A

公开(公告)日：1999-09-07

申请号：US804672

申请日：1997-02-25

申请人： Kenji Ohtoshi ,  Munehiro Ogasawara ,  Jun Takamatsu ,  Toru Koike ,  Kazuyoshi Sugihara

发明人： Kenji Ohtoshi ,  Munehiro Ogasawara ,  Jun Takamatsu ,  Toru Koike ,  Kazuyoshi Sugihara

IPC分类号： H01J37/02 ,  H01J37/147 ,  H01J49/22

CPC分类号： H01J37/02 ,  H01J37/1477 ,  H01J2237/022

摘要： A charged beam applying apparatus comprises a column at least having a charged beam generation section and optical system for controlling the charged beam and a chamber for holding a specimen in place which is exposed with the charged beam. At least one inner portion of the column is formed of a specific material whose an atomic number is equal or less than 22. When a contamination is cleaned off in the column through the utilization of an oxidation effect, an oxide film is sometimes formed inside the column. The electric charging of the oxide film causes a beam control error. The specific material such as the metal of the atomic number causes very much less such error. This is because such specific material involves less emission of secondary electrons and less electric charging in the oxide film formed.

摘要翻译： 带电波束施加装置包括至少具有带电波束产生部分和用于控制带电波束的光学系统的柱和用于将样本保持在用充电束暴露的适当位置的室。 柱的至少一个内部部分由原子序数等于或小于22的特定材料形成。当通过利用氧化效应在柱中清除污染物时，有时会在其内部形成氧化物膜 柱。 氧化膜的充电引起光束控制误差。 诸如原子序号的金属的具体材料导致非常少的这种误差。 这是因为这种具体材料在形成的氧化膜中涉及较少的二次电子的发射和较少的电荷。