公开(公告)号：US20170365570A1

公开(公告)日：2017-12-21

申请号：US15184841

申请日：2016-06-16

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Chengjie Zuo ,  Mario Velez ,  Changhan Yun ,  Jonghae Kim

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/48 ,  H01L21/683

CPC classification number: H01L21/6836 ,  H01L21/4846 ,  H01L21/78 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/05647 ,  H01L2224/32265 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2224/83 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014

Abstract: Some implementations provide a device that includes a passive component and a substrate coupled to the passive component, where a surface of the substrate comprises a first irradiated portion. In some implementations, the first irradiated portion is located in an offset portion of the substrate. Some implementations provide an integrated device that includes a device layer and a substrate coupled to the device layer, where a surface of the substrate comprises a first irradiated portion. In some implementations, the first irradiated portion is located in an offset portion of the substrate.

公开(公告)号：US20170279469A1

公开(公告)日：2017-09-28

申请号：US15080472

申请日：2016-03-24

Applicant: QUALCOMM Incorporated

Inventor： Yunfei Ma ,  Chengjie Zuo ,  David Berdy ,  Daeik Kim ,  Changhan Yun ,  Je-Hsiung Lan ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Robert Mikulka ,  Jonghae Kim

IPC: H04B1/00 ,  H04B1/40 ,  H04L5/14 ,  H04B1/04 ,  H04B1/3827

CPC classification number: H04B1/0057 ,  H03H7/09 ,  H03H7/463 ,  H04B1/04 ,  H04B1/3827 ,  H04B1/40 ,  H04B2001/0416 ,  H04L5/14

Abstract: An RF diplexer is provided with an integrated diplexer that shares a primary inductor included in a channel within the RF diplexer.

公开(公告)号：US10418333B1

公开(公告)日：2019-09-17

申请号：US15985978

申请日：2018-05-22

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Jie Fu ,  Manuel Aldrete

IPC: H01L29/82 ,  H01L21/00 ,  H01L23/552 ,  H01L23/66

Abstract: Certain aspects of the present disclosure are directed to an integrated circuit (IC) package. The IC package generally includes an IC and a shielding sidewall disposed adjacent to the IC. In certain aspects, the IC comprises a first layer coupled to the shielding sidewall, a second layer comprising a first signal path, and a third layer disposed below the first layer and coupled to the shielding sidewall, wherein the second layer is disposed between the first layer and the third layer. In some cases, the IC also includes a plurality of vias configured to couple the first layer to the third layer, wherein at least a portion of the first signal path is disposed in an inner shielding region that spans from the first layer to the third layer and spans from the shielding sidewall to the plurality of vias.

公开(公告)号：US10325855B2

公开(公告)日：2019-06-18

申请号：US15074750

申请日：2016-03-18

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Jie Fu ,  Changhan Yun ,  Chin-Kwan Kim ,  Manuel Aldrete ,  Chengjie Zuo ,  Mario Velez ,  Jonghae Kim

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00

Abstract: A device and method of fabricating are provided. The device includes a substrate having a first side and an opposite second side, a cavity defined within the substrate from the first side, a die coupled to a floor of the cavity and having a conductive pad on a side of the die distal to the floor of the cavity. A laminate layer coupled to the second side of the substrate may be included. A hole may be drilled, at one time, through layers of the device, through the die, and through the conductive pad. The hole extends through and is defined within the laminate layer (if present), the second side of the substrate, the die, and the conductive pad. A conductive material is provided within the hole and extends between and through the laminate layer (if provided), the second side of the substrate, the die, and the conductive pad.

公开(公告)号：US10325859B1

公开(公告)日：2019-06-18

申请号：US15944233

申请日：2018-04-03

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Jie Fu ,  Manuel Aldrete

IPC: H01L23/538 ,  H01L23/552 ,  H01L25/16

Abstract: Some features pertain to a stacked package apparatus that includes a shield at least partially surrounding the apparatus, a first substrate including a plurality of first pads, the plurality of first pads coupled to the shield, and a second substrate, the second substrate over the first substrate and coupled to the first substrate, the second substrate including a plurality of second pads, the plurality of second pads coupled to the shield.

公开(公告)号：US10171112B2

公开(公告)日：2019-01-01

申请号：US15080472

申请日：2016-03-24

Applicant: QUALCOMM Incorporated

Inventor： Yunfei Ma ,  Chengjie Zuo ,  David Berdy ,  Daeik Kim ,  Changhan Yun ,  Je-Hsiung Lan ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Robert Mikulka ,  Jonghae Kim

IPC: H01P5/18 ,  H04B1/00 ,  H04B1/04 ,  H04B1/3827 ,  H04B1/40 ,  H04L5/14 ,  H03H7/09 ,  H03H7/46 ,  H01P5/02

Abstract: An RF diplexer is provided that includes a first channel and a second channel. The first channel includes a first primary inductor. Similarly, the second channel includes a second primary inductor. A first directional coupler for the first channel includes a first transformer formed by the first primary inductor and also a first secondary inductor. A first terminal for the first secondary inductor is a coupled port for the first directional coupler. A second directional coupler for the second channel includes a second transformer formed by the second primary inductor and also a second secondary inductor. A first terminal for the second secondary inductor is a coupled port for the second directional coupler.

公开(公告)号：US20170271266A1

公开(公告)日：2017-09-21

申请号：US15074750

申请日：2016-03-18

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Jie Fu ,  Changhan Yun ,  Chin-Kwan Kim ,  Manuel Aldrete ,  Chengjie Zuo ,  Mario Velez ,  Jonghae Kim

IPC: H01L23/538 ,  H01L21/48

CPC classification number: H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5383 ,  H01L23/5384 ,  H01L24/19 ,  H01L24/20 ,  H01L24/25 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2518 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A device and method of fabricating are provided. The device includes a substrate having a first side and an opposite second side, a cavity defined within the substrate from the first side, a die coupled to a floor of the cavity and having a conductive pad on a side of the die distal to the floor of the cavity. A laminate layer coupled to the second side of the substrate may be included. A hole may be drilled, at one time, through layers of the device, through the die, and through the conductive pad. The hole extends through and is defined within the laminate layer (if present), the second side of the substrate, the die, and the conductive pad. A conductive material is provided within the hole and extends between and through the laminate layer (if provided), the second side of the substrate, the die, and the conductive pad.