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    Remapping memory cells based on future endurance measurements
    4.
    发明授权
    Remapping memory cells based on future endurance measurements 有权
    基于未来的耐久性测量重新映射存储单元

    公开(公告)号：US09442838B2

    公开(公告)日：2016-09-13

    申请号：US14058081

    申请日：2013-10-18

    Applicant: Rambus Inc.

    Inventor： Trung Diep ,  John Eric Linstadt ,  J. James Tringali ,  Hongzhong Zheng ,  Brent Steven Haukness

    IPC: G11C13/00 ,  G06F12/02 ,  G11C29/50 ,  G11C29/04

    CPC classification number: G06F12/0238 ,  G06F2212/7204 ,  G06F2212/7211 ,  G11C13/0028 ,  G11C13/0035 ,  G11C13/0069 ,  G11C29/50008 ,  G11C2029/0409 ,  G11C2213/72 ,  G11C2213/79

    Abstract: A method of operating a memory device that includes groups of memory cells is presented. The groups include a first group of memory cells. Each one of the groups has a respective physical address and is initially associated with a respective logical address. The device also includes an additional group of memory cells that has a physical address but is not initially associated with a logical address. In the method, a difference in the future endurance between the first group of memory cells and the additional group of memory cells is identified. When the difference in the future endurance between the first group and the additional group exceeds a predetermined threshold difference, the association between the first group and the logical address initially associated with the first group is ended and the additional group is associated with the logical address that was initially associated with the first group.

    Abstract translation: 提出了一种操作包括存储器单元组的存储器件的方法。 这些组包括第一组记忆单元。 组中的每一个具有相应的物理地址，并且最初与相应的逻辑地址相关联。 该设备还包括具有物理地址但不是最初与逻辑地址相关联的附加组的存储器单元。 在该方法中，识别第一组存储器单元和附加的存储单元组之间的未来耐久性的差异。 当第一组和附加组之间的未来耐久性的差异超过预定阈值差时，第一组和最初与第一组相关联的逻辑地址之间的关联结束，并且附加组与逻辑地址相关联， 最初与第一组有关。

    LOW OVERHEAD REFRESH MANAGEMENT OF A MEMORY DEVICE
    5.
    发明申请
    LOW OVERHEAD REFRESH MANAGEMENT OF A MEMORY DEVICE 有权

    公开(公告)号：US20250029649A1

    公开(公告)日：2025-01-23

    申请号：US18716098

    申请日：2022-12-02

    Applicant: Rambus Inc.

    Inventor： J. James Tringali

    IPC: G11C11/406

    Abstract: A system and method for performing a low overhead refresh management of a memory device. The method includes receiving, by a controller from a dynamic random access memory (DRAM) device via a feedback interface, a signal indicative of an occurrence of a row hammer event. The method includes determining, by the controller based on the signal, whether to schedule a refresh event. The method includes sending, by the controller responsive to determining whether to schedule the refresh event, a first command to the DRAM device to execute a refresh operation.

    Remapping Memory Cells Based on Future Endurance Measurements
    8.
    发明申请
    Remapping Memory Cells Based on Future Endurance Measurements 有权
    基于未来耐久性测量重新映射记忆单元

    公开(公告)号：US20140115296A1

    公开(公告)日：2014-04-24

    申请号：US14058081

    申请日：2013-10-18

    Applicant: Rambus Inc.

    Inventor： Trung Diep ,  John Eric Linstadt ,  J. James Tringali ,  Hongzhong Zheng ,  Brent Steven Haukness

    IPC: G06F12/10

    CPC classification number: G06F12/0238 ,  G06F2212/7204 ,  G06F2212/7211 ,  G11C13/0028 ,  G11C13/0035 ,  G11C13/0069 ,  G11C29/50008 ,  G11C2029/0409 ,  G11C2213/72 ,  G11C2213/79

    Abstract: A method of operating a memory device that includes groups of memory cells is presented. The groups include a first group of memory cells. Each one of the groups has a respective physical address and is initially associated with a respective logical address. The device also includes an additional group of memory cells that has a physical address but is not initially associated with a logical address. In the method, a difference in the future endurance between the first group of memory cells and the additional group of memory cells is identified. When the difference in the future endurance between the first group and the additional group exceeds a predetermined threshold difference, the association between the first group and the logical address initially associated with the first group is ended and the additional group is associated with the logical address that was initially associated with the first group.

    Abstract translation: 提出了一种操作包括存储器单元组的存储器件的方法。 这些组包括第一组记忆单元。 组中的每一个具有相应的物理地址，并且最初与相应的逻辑地址相关联。 该设备还包括具有物理地址但不是最初与逻辑地址相关联的附加组的存储器单元。 在该方法中，识别第一组存储器单元和附加的存储单元组之间的未来耐久性的差异。 当第一组和附加组之间的未来耐久性的差异超过预定阈值差时，第一组与最初与第一组相关联的逻辑地址之间的关联结束，并且附加组与逻辑地址相关联， 最初与第一组有关。

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