摘要:
In a dynamic random access memory (10) that includes a cell array area (12) and at least one peripheral array area (14), a plurality of sense amplifier banks (20) are arranged in rows. A plurality of elongate longitudinal signal conductors (92) are formed over the cell array area (12) to intersect each of the rows. Each row has at least one transverse signal conductor (98) that is coupled to at least some of the longitudinal signal conductors (92). Inputs of the sense amplifiers (30) in the row are coupled to the transverse signal conductor (92) for receiving the global signal. A signal driver circuit (124-130) is formed in the peripheral area (14), with the longitudinal conductors (98) coupled to outputs of the signal driver circuit (124-130).
摘要:
The described embodiment of the present invention includes a combinatorial circuit, such as a multiplexor. All or a portion of the input signals to the multiplexor are also provided to a transition detector. Upon detecting a transition, the transition detector provides a signal which temporarily suppresses the operation of the combinatorial circuit prior to a portion of the combinatorial circuit which is sensitive to glitches and/or timing errors. The delay allows time for glitches and/or timing errors to dissipate. This provides a cleaner signal for the sensitive portion to avoid the errors that the suppressed glitches and/or timing errors may cause.
摘要:
A synchronous random access memory is arranged to be responsive directly to a system clock signal for operating synchronously with the associated microprocessor. The synchronous random access memory is further arranged to either write-in or read out data in a synchronous burst operation or synchronous wrap operation in addition to synchronous random access operations. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.
摘要:
A synchronous random access memory is arranged to be responsive directly to a system clock signal for operating synchronously with the associated microprocessor. The synchronous random access memory is further arranged to either write-in or read out data in a synchronous burst operation or synchronous wrap operation in addition to synchronous random access operations. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.
摘要:
A semiconductor dynamic memory device is disclosed which contains circuitry for implementing both page mode and nibble modes using a conductor level selection. A clock voltage used in column decoding and output is either coupled to or decoupled from the column strobe or CAS input by conductor, so this clock voltage is rendered either dependent on, or independent of, the cycling of the column strobe.
摘要:
An asynchronous address interface circuit and method for converting unrestricted randomly scheduled address transitions of memory address signals into scheduled address events from which initiation of a sequence of memory access events can be based. The address interface circuit initiates a delay sequence based on a address transition detection pulse. In the event a new address transition detection pulse is received prior to completion of the delay sequence, the delay sequence is reset and restarted based on the new address transition detection pulse. The sequence of memory access events is initiated in response to the completion of the delay sequence.
摘要:
A system of interface circuits (15, 20-1 through 20-N) includes a mode sensing circuit (15) and one or more output circuits (20-1 through 20-N). The mode sensing circuit is arranged for producing control signals (on leads 22, 24) in response to an input signal (on lead 21). The output circuit (34-1) is arranged for producing an output data signal (DQ-1) dependent upon an input data signal (DATA) when the input signal (on lead 21) is in a first state and dependent upon the input data signal and the configuration of the connected output circuit (34-1) when the input signal is in a second state.
摘要:
A semiconductor dynamic memory device contains differential sense amplifiers for detecting the charge on bit line halves which are of the folded type. The sense amplifiers are multiplexed so that one of two opposite pairs of bit line halves are selected. The two opposite pairs share precharge and active pull-up circuits on one side of the array, and share column output lines on the opposite side. Thus, the multiplex circuitry operates not only for selecting one side or the other for sensing, but also for coupling precharge and boost voltages or read/write data back and forth from one side of the sense amplifier to the other. The active pull-up circuits are activated in both read and write portions of a read-modify-write cycle.
摘要:
A circuit is provided for replacing a defective signal path (94) of a plurality of like signal paths with a redundant signal path (95, 96). A redundant decoder (72) is programmable to respond to a plurality of predetermined addressing signals (RFn) that normally operate to address the defective signal path (94, ROWL1R and ROWL1L). The redundant decoder is operable to generate a disable signal (RREN) in response to the predetermined addressing signals (RFn) and also is operable to select a redundant signal path (95, 96) in response thereto. A decoding circuit (70, 74) normally decodes selected ones of a plurality of addressing signals (RFn) and selects at least one of a plurality of signal paths in response thereto. The decoding circuit (70, 74) is coupled to the redundant decoder (72) for receiving the disable signal (RREN) therefrom. In response to receiving this disable signal (RREN) the decoding circuit (70, 74) will not decode the preselected addressing signals (RFn).
摘要:
A synchronous random access memory is arranged to be responsive directly to a system clock signal for operating synchronously with the associated microprocessor. The synchronous random access memory is further arranged to either write-in or read out data in a synchronous burst operation or synchronous wrap operation in addition to synchronous random access operations. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.