公开(公告)号：US20140147954A1

公开(公告)日：2014-05-29

申请号：US14167877

申请日：2014-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/007 ,  H01L33/32

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract translation: 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

公开(公告)号：US20160111595A1

公开(公告)日：2016-04-21

申请号：US14731391

申请日：2015-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Min Hwan KIM ,  Eun Deok SIM ,  Ji Heon OH ,  Heon Ho LEE ,  Ho Chul LEE ,  Jae Sung HYUN

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract translation: 半导体发光器件可以包括：第一导电型半导体层; 设置在所述第一导电型半导体层上并且包括多个量子势垒层和交替层叠的多个量子阱层的有源层; 以及设置在有源层上的第二导电型半导体层。 在多个量子势垒层中最靠近第二导电类型半导体层的量子势垒层可以包括第一未掺杂区域和设置在第一未掺杂区域上的第一掺杂区域，并且具有大于或等于 第一个未掺杂的地区。 第一未掺杂区域和第一掺杂区域中的每一个可以包括具有不同能带隙的多个第一单元层和至少一个空穴积聚区域。

公开(公告)号：US20160043279A1

公开(公告)日：2016-02-11

申请号：US14661950

申请日：2015-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won JEAN ,  Min Hwan KIM ,  Eun Deok SIM ,  Jong Hyun LEE ,  Heon Ho LEE ,  Ho Chul LEE ,  Jae Sung HYUN

IPC: H01L33/32 ,  H01L33/02 ,  H01L33/46 ,  H01L33/14 ,  H01L33/50 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/325 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  H01L33/502 ,  Y10S977/95

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的边界层，其带隙能量在单个方向上减小，并且由经验公式AlxInyGa1-x-yN（0＆n1E; x＆ ; 0.1,0.01＆amp; nlE; y＆nlE; 0.1），设置在边界层上并具有一个或多个InGaN层和一个或多个GaN层交替堆叠的结构的有源层和p型半导体层。

公开(公告)号：US20140159081A1

公开(公告)日：2014-06-12

申请号：US14013678

申请日：2013-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Suk LEE ,  Ok Hyun KIM ,  Dong Yul LEE ,  Dong Ju LEE ,  Jeong Wook LEE ,  Heon Ho LEE

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract translation: 提供一种形成半导体层的方法。 该方法包括在衬底上形成多个纳米棒并在衬底上形成下半导体层，以暴露至少部分纳米棒。 去除纳米棒以在下半导体层中形成空隙，并且在半导体层的下部和空隙上形成上半导体层。

公开(公告)号：US20130236634A1

公开(公告)日：2013-09-12

申请号：US13789901

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Min CHOI ,  Dong Ju LEE ,  Heon Ho LEE ,  Jang Mi KIM ,  Ok Hyun KIM

IPC: C23C16/52

CPC classification number: C23C16/52

Abstract: There is provided a chemical vapor deposition apparatus, including: a reaction chamber including a support part having a wafer placed thereon and a gas supply part supplying a process gas to a reactive space formed above the support part to allow a thin film to be grown on a surface of the wafer; a heat exchanger changing a temperature of the process gas, supplied to the reactive space through the gas supply part, to allow the process gas to be maintained at a set temperature: and a controller regulating a flow rate of the process gas, and detecting a temperature difference between a temperature of the process gas and the set temperature to thereby control the heat exchanger to supply the process gas to the reactive space while the process gas is maintained at a reference temperature set according to each stage.

Abstract translation: 提供了一种化学气相沉积设备，包括：反应室，其包括具有放置在其上的晶片的支撑部分，以及将处理气体供应到形成在支撑部分上方的反应空间的气体供应部分，以使薄膜生长在 晶片的表面; 换热器，其通过气体供给部供给至反应空间的工艺气体的温度，使处理气体保持在设定温度;以及控制器，调节处理气体的流量， 处理气体的温度与设定温度之间的温度差，从而控制热交换器以将处理气体供应到反应空间，同时处理气体保持在根据每个阶段设定的参考温度。