公开(公告)号：US20230079680A1

公开(公告)日：2023-03-16

申请号：US17829679

申请日：2022-06-01

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Keunwook SHIN ,  Kibum KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE

IPC: C01B32/186 ,  C01B32/188 ,  H01L29/41 ,  H01L29/40

Abstract: Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).

公开(公告)号：US20230012899A1

公开(公告)日：2023-01-19

申请号：US17951474

申请日：2022-09-23

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Keunwook SHIN ,  Kibum KIM ,  Hyunmi KIM ,  Hyeonjin SHIN ,  Sanghun LEE

IPC: H01L23/538 ,  H01L29/16 ,  H01L23/532 ,  H01L23/00

Abstract: An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.

公开(公告)号：US20210049580A1

公开(公告)日：2021-02-18

申请号：US16969345

申请日：2019-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kibum KIM

IPC: G06Q20/32 ,  G06F3/16 ,  G06Q20/40 ,  G05B15/02

Abstract: According to various embodiment of the present invention, an electronic device comprises: an audio module including a speaker and a receiver; a codec circuit for transmitting and receiving an audio signal; a magnetic secure transmission (MST) circuit; a switch unit; a memory; and a processor electrically connected with the audio module, the codec circuit, the MST circuit, the switch unit, and the memory, wherein, if a function for requesting a payment is executed when the codec circuit and the audio module are connected with each other, the processor can be configured to: control the switch unit so as to connect the MST circuit with the speaker and/or the receiver, which are included in the audio module; and transmit the MST signal for the payment by using the speaker and/or the receiver, which are connected with the MST circuit. In addition to various embodiments disclosed in the present invention, other various embodiments are possible.

公开(公告)号：US20240203980A1

公开(公告)日：2024-06-20

申请号：US18482680

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongeun CHO ,  Hyunjeong ROH ,  Kibum KIM ,  Seonkyeong KIM ,  Hayoung KIM

IPC: H01L27/02 ,  H01L21/8234 ,  H01L23/48 ,  H02H9/04 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L27/0292 ,  H01L21/823475 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H02H9/046 ,  H01L24/05 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L2224/0557 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544

Abstract: A semiconductor device includes: a first I/O interface cell region having a plurality of first electrostatic discharge (ESD) diodes, a first driver and a first through silicon via (TSV) disposed therein and having first wiring patterns and first via patterns for electrically connecting the plurality of first ESD diodes, the first driver and the first TSV; and a second I/O interface cell region having a plurality of second ESD diodes, a second driver and a second TSV disposed therein and having second wiring patterns and second via patterns for electrically connecting the second driver, the second TSV and a subset of the plurality of second ESD diodes, wherein the second ESD diodes other than the subset are separated from the second driver and the second TSV.

公开(公告)号：US20230171535A1

公开(公告)日：2023-06-01

申请号：US18101271

申请日：2023-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kibum KIM ,  Jinsu KIM ,  Seokjoon PARK ,  Hakjoon KIM

IPC: H04R1/28 ,  H05K9/00 ,  H04R3/00 ,  H04R1/02

CPC classification number: H04R1/2826 ,  H05K9/0024 ,  H04R3/00 ,  H04R1/025 ,  H04R1/028 ,  H04R2400/11 ,  H04R2499/11 ,  H04M1/0277

Abstract: The electronic device may include: a housing; a printed circuit board (PCB) disposed in the housing, the PCB including a first board surface facing a first direction and a second board surface opposite to the first board surface, and having an opening penetrating through a surface thereof, a sound module disposed in the opening so that a front thereof faces the first direction, and electrically connected to the PCB to generate a sound, a shield can connected to the second board surface to cover the opening, in a state in which the second board surface is viewed, and a frame disposed to face the first board surface.

公开(公告)号：US20240203977A1

公开(公告)日：2024-06-20

申请号：US18475881

申请日：2023-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongeun CHO ,  Kibum KIM ,  Seonkyeong KIM ,  Hayoung KIM ,  Hyunjeong ROH

IPC: H01L27/02 ,  H01L23/48

CPC classification number: H01L27/0255 ,  H01L23/481 ,  H01L27/0207

Abstract: A semiconductor device may include a substrate including a Keep-Out Zone (KOZ) and a layout finishing cell region, a through silicon via (TSV) penetrating the substrate and surrounded by the KOZ; an ESD diode on an upper surface of the substrate, a driver circuit, gate structures, and metal wirings electrically connecting the TSV, the ESD diode, and the driver circuit. The layout finishing cell region may surround the KOZ and the ESD diode. The driver circuit may be adjacent to and outside the layout finishing cell region. The substrate may include active regions extending from an end inside the layout finishing cell region. The gate structures may intersect the active regions to form semiconductor components. The driver circuit may include at least some of the semiconductor components.

公开(公告)号：US20210020835A1

公开(公告)日：2021-01-21

申请号：US17060884

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun LEE ,  Seongjun PARK ,  Hyunjae SONG ,  Hyeonjin SHIN ,  Kibum KIM ,  Sanghun LEE ,  Yunho KANG

IPC: H01L45/00 ,  H01L21/768 ,  G11C13/00

Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.

公开(公告)号：US20200350252A1

公开(公告)日：2020-11-05

申请号：US16861891

申请日：2020-04-29

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Keunwook SHIN ,  Kibum KIM ,  Hyunmi KIM ,  Hyeonjin SHIN ,  Sanghun LEE

IPC: H01L23/538 ,  H01L29/16 ,  H01L23/00 ,  H01L23/532

Abstract: An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.