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公开(公告)号：US20210020835A1
公开(公告)日：2021-01-21
申请号：US17060884
申请日：2020-10-01
发明人： Minhyun LEE , Seongjun PARK , Hyunjae SONG , Hyeonjin SHIN , Kibum KIM , Sanghun LEE , Yunho KANG
IPC分类号： H01L45/00 , H01L21/768 , G11C13/00
摘要： A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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公开(公告)号：US20190097215A1
公开(公告)日：2019-03-28
申请号：US16015835
申请日：2018-06-22
发明人： Minhyun LEE , Seongjun PARK , Hyunjae SONG , Hyeonjin SHIN , Ki-Bum KIM , Yunhho KANG , Sanghun LEE
IPC分类号： H01M4/36 , H01M10/0525 , H01M4/133 , H01M4/587 , H01M4/38
摘要： Provided are lithium ion batteries including a nano-crystalline graphene electrode. The lithium ion battery includes a cathode on a cathode current collector, an electrolyte layer on the cathode, an anode on the electrolyte layer, and an anode current collector on the anode. The anode and the cathode include a plurality of grains having a size in a range from about 5 nm to about 100 nm. The cathode has a double bonded structure in which a carbon of the graphene is combined with oxygen.
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公开(公告)号：US20240065001A1
公开(公告)日：2024-02-22
申请号：US18299403
申请日：2023-04-12
发明人： Seyun KIM , Jooheon KANG , Sunho KIM , Yumin KIM , Garam PARK , Hyunjae SONG , Dongho AHN , Seungyeul YANG , Myunghun WOO , Jinwoo LEE
IPC分类号： H10B63/00
CPC分类号： H10B63/845 , H10B63/34
摘要： Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.
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公开(公告)号：US20230207312A1
公开(公告)日：2023-06-29
申请号：US18179565
申请日：2023-03-07
发明人： Eunkyu LEE , Kyung-Eun BYUN , Hyunjae SONG , Hyeonjin SHIN , Changhyun KIM , Keunwook SHIN , Changseok LEE , Alum JUNG
IPC分类号： H01L21/02 , H01L29/16 , H01L29/165
CPC分类号： H01L21/02447 , H01L29/1606 , H01L29/1608 , H01L29/165 , H01L21/02499 , H01L21/02527 , H01L21/0262 , H01L21/02658 , H01L21/02381
摘要： Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.
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公开(公告)号：US20230121581A1
公开(公告)日：2023-04-20
申请号：US17741847
申请日：2022-05-11
发明人： Seyun KIM , Doyoon KIM , Yumin KIM , Hyunjae SONG , Seungyeul YANG
IPC分类号： H01L27/24
摘要： A variable resistance memory device includes: a supporting layer including an insulating material; a variable resistance layer on the supporting layer and including a first layer including a metal oxide and metal nanoparticles, the variable resistance layer including a second layer on the first layer and including an oxide; a channel layer on the variable resistance layer; a gate insulating layer on the channel layer; and a gate electrode on the gate insulating layer. The metal nanoparticles in the variable resistance layer include a first metal capable of combining with oxygen ions of the metal oxide, thereby increasing oxygen vacancies.
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6.发明申请公开(公告)号：US20200294928A1
公开(公告)日：2020-09-17
申请号：US16884590
申请日：2020-05-27
发明人： Kyung-Eun BYUN , Keunwook SHIN , Yonghoon KIM , Hyeonjin SHIN , Hyunjae SONG , Changseok LEE , Changhyun KIM , Yeonchoo CHO
IPC分类号： H01L23/532
摘要： Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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公开(公告)号：US20180004082A1
公开(公告)日：2018-01-04
申请号：US15403446
申请日：2017-01-11
发明人： Hyunjae SONG , Hyeonjin SHIN
CPC分类号： G03F1/62 , G03F1/22 , G03F1/48 , G03F1/64 , G03F7/70058
摘要： Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.
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8.发明申请LAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND METHOD OF MANUFACTURING THE SAME 审中-公开包括扩散障碍层的层结构及其制造方法公开(公告)号：US20160240482A1
公开(公告)日：2016-08-18
申请号：US14814938
申请日：2015-07-31
发明人： Hyunjae SONG , Seunggeol NAM , Yeonchoo CHO , Seongjun PARK , Hyeonjin SHIN , Jaeho LEE
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53209 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/5226
摘要： Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.
摘要翻译： 示例实施例涉及具有扩散阻挡层的层结构及其制造方法。 层结构包括第一和第二材料层以及它们之间的扩散阻挡层。 扩散阻挡层包括纳米晶石墨烯（nc-G）层。 在层结构中，扩散阻挡层还可以与nc-G层一起包括非石墨烯金属化合物层或石墨烯层。 第一和第二材料层之一是绝缘层，金属层或半导体层，其余层可以是金属层。
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公开(公告)号：US20240196763A1
公开(公告)日：2024-06-13
申请号：US18214755
申请日：2023-06-27
发明人： Yumin KIM , Seyun KIM , Garam PARK , Hyunjae SONG , Seungyeul YANG , Seungdam HYUN , Jooheon KANG , Jinwoo LEE
CPC分类号： H10N70/826 , H10B63/84 , H10N70/8833
摘要： A variable resistance memory device includes a pillar, a resistance change layer provided at a side surface of the pillar, a semiconductor layer provided at a side surface of the resistance change layer, a gate insulating layer provided at a side surface of the semiconductor layer, a plurality of isolating layers and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer, and an internal resistance layer between the resistance change layer and the semiconductor layer, where a resistance of the internal resistance layer is greater than a resistance of the semiconductor layer when the semiconductor layer includes conductor characteristics and the resistance of the internal resistance layer is less than the resistance of the semiconductor layer when the semiconductor layer includes insulator characteristics.
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10.发明公开公开(公告)号：US20240151522A1
公开(公告)日：2024-05-09
申请号：US18412823
申请日：2024-01-15
发明人： Eunkyu LEE , Yeonchoo CHO , Sangwon KIM , Kyung-Eun BYUN , Hyunjae SONG , Hyeonjin SHIN
IPC分类号： G01B15/02 , G01N23/2208 , G01N23/2273 , H01L21/285 , H01L21/66 , H01L29/45
CPC分类号： G01B15/02 , G01N23/2208 , G01N23/2273 , H01L21/28512 , H01L22/12 , H01L29/45 , G01N2223/085 , G01N2223/61
摘要： A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.
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