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    IMAGE SENSORS
    1.
    发明公开
    IMAGE SENSORS 审中-公开

    公开(公告)号：US20230154946A1

    公开(公告)日：2023-05-18

    申请号：US18155785

    申请日：2023-01-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Bin Yun ,  Eun Sub SHIM ,  Kyung Ho LEE ,  Sung Ho CHOI ,  Jung Hoon PARK ,  Jung Wook LIM ,  Min Ji JUNG

    IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

    CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

    Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

    IMAGE SENSOR AND IMAGE SENSING SYSTEM
    2.
    发明申请
    IMAGE SENSOR AND IMAGE SENSING SYSTEM 有权

    公开(公告)号：US20220165765A1

    公开(公告)日：2022-05-26

    申请号：US17373924

    申请日：2021-07-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Sub JUNG ,  Seung Ki BAEK ,  Kyung Ho LEE

    IPC: H01L27/146 ,  H04N9/04

    Abstract: An image sensor includes a first element separation film inside a substrate and having a mesh shape, pixel regions on the substrate defined by the first element separation film and including at least first and second pixel regions, and a second element separation film inside the substrate and partitioning the first pixel region into sub-pixel regions, the second element separation film not being in the second pixel region, wherein the first pixel region includes first photoelectric conversion elements, and a first color filter on the first photoelectric conversion elements, the first color filter being one of white, green, and blue color filters, and wherein the second pixel region includes second photoelectric conversion elements, and a second color filter on the second photoelectric conversion elements, the second color filter being different from the first color filter and one of red and white color filters.

    IMAGE SENSORS
    4.
    发明公开
    IMAGE SENSORS 审中-公开

    公开(公告)号：US20230369357A1

    公开(公告)日：2023-11-16

    申请号：US18355427

    申请日：2023-07-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Bin Yun ,  Eun Sub SHIM ,  Kyung Ho LEE ,  Sung Ho CHOI ,  Jung Hoon PARK ,  Jung Wook LIM ,  Min Ji JUNG

    IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

    CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

    Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

    IMAGE SENSOR
    5.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220344384A1

    公开(公告)日：2022-10-27

    申请号：US17537926

    申请日：2021-11-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min Ji JUNG ,  Doo Sik SEOL ,  Sung Min AN ,  Kyung Duck LEE ,  Kyung Ho LEE ,  Seung Ki JUNG ,  You Jin JEONG ,  Tae Sub JUNG ,  Jeong Jin CHO ,  Masato FUJITA

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.

    IMAGE SENSOR
    6.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220013552A1

    公开(公告)日：2022-01-13

    申请号：US17318231

    申请日：2021-05-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung Ki BAEK ,  Kyung Ho LEE ,  Tae Sub JUNG ,  Doo Sik SEOL ,  Seung Ki JUNG

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.

    SEMICONDUCTOR PACKAGE FOR REDUCING STRESS TO REDISTRIBUTION VIA
    7.
    发明申请
    SEMICONDUCTOR PACKAGE FOR REDUCING STRESS TO REDISTRIBUTION VIA 审中-公开

    公开(公告)号：US20200350270A1

    公开(公告)日：2020-11-05

    申请号：US16932185

    申请日：2020-07-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seok Hwan KIM ,  Han KIM ,  Kyung Ho LEE ,  Kyung Moon JUNG

    IPC: H01L23/00 ,  H01L23/28 ,  H01L23/498 ,  H01L23/538 ,  H01L23/16

    Abstract: A semiconductor package includes: a connection member having a first surface and a second surface opposing each other in a stacking direction of the semiconductor package and including an insulating member and a redistribution layer formed on the insulating member and having a redistribution via; a semiconductor chip disposed on the first surface of the connection member and having connection pads connected to the redistribution layer; an encapsulant disposed on the first surface of the connection member and encapsulating the semiconductor chip; a passivation layer disposed on the second surface of the connection member; UBM pads disposed on the passivation layer and overlapping the redistribution vias in the stacking direction; and UBM vias connecting the UBM pads to the redistribution layer through the passivation layer, not overlapping the redistribution vias with respect to the stacking direction, and having a non-circular cross section.

    IMAGE SENSOR, CONFIGURED TO REGULATE A QUANTITY OF LIGHT ABSORBED THEREBY, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD
    8.
    发明申请
    IMAGE SENSOR, CONFIGURED TO REGULATE A QUANTITY OF LIGHT ABSORBED THEREBY, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD 审中-公开
    图像传感器，被配置为调节其吸收的光的数量，包括其的电子设备和图像感测方法

    公开(公告)号：US20150156437A1

    公开(公告)日：2015-06-04

    申请号：US14579857

    申请日：2014-12-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang Chul SUL ,  Hirosige GOTO ,  Kyung Ho LEE

    IPC: H04N5/3745 ,  H04N5/378

    CPC classification number: H04N5/3745 ,  H01L27/307 ,  H04N5/3591 ,  H04N5/378

    Abstract: An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

    Abstract translation: 提供了图像传感器和图像感测方法。 图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。 由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

    IMAGE SENSOR AND IMAGE SENSING SYSTEM INCLUDING THE IMAGE SENSOR
    10.
    发明申请
    IMAGE SENSOR AND IMAGE SENSING SYSTEM INCLUDING THE IMAGE SENSOR 有权

    公开(公告)号：US20220328554A1

    公开(公告)日：2022-10-13

    申请号：US17539277

    申请日：2021-12-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chan hee LEE ,  Kyung Ho LEE ,  Seung Ki BAEK ,  Seung Ki JUNG ,  Tae Sub JUNG

    IPC: H01L27/146

    Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposing the first surface, a photodiode layer in the semiconductor substrate, a transfer gate on the photodiode layer, the transfer gate being on the first surface of the semiconductor substrate, a first trench recessed from the first surface of the semiconductor substrate at one side of the transfer gate, a first impurity injection region on at least a portion of a bottom surface of the first trench, the first impurity injection region not being on a sidewall of the first trench, and a lens on the second surface of the semiconductor substrate.

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