公开(公告)号：US20150349133A1

公开(公告)日：2015-12-03

申请号：US14813408

申请日：2015-07-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Ryosuke WATANABE ,  Masashi OOTA ,  Noritaka ISHIHARA ,  Koki INOUE

IPC: H01L29/786

CPC classification number: H01L29/1054 ,  H01L22/14 ,  H01L29/247 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

公开(公告)号：US20160336456A1

公开(公告)日：2016-11-17

申请号：US15220532

申请日：2016-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

Abstract translation: 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。

公开(公告)号：US20140252345A1

公开(公告)日：2014-09-11

申请号：US14196281

申请日：2014-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Ryosuke WATANABE

IPC: H01L31/0336 ,  H01L33/18

CPC classification number: G01R31/2656 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L22/14 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×10−2/cm. Alternatively, a semiconductor device is manufactured using the semiconductor film.

Abstract translation: 提供了相对于光照射具有高稳定性的氧化物半导体膜或者相对于光照射具有高稳定性的半导体器件。 本发明的一个实施方案是包括氧化物的半导体膜，其中通过在400nm至800nm的波长范围内的恒定光电流方法（CPM）观察到光吸收，并且其中缺陷水平的吸收系数 是通过从光吸收中除去带尾的光吸收而得到的，小于或等于5×10-2 / cm。 或者，使用半导体膜制造半导体器件。

公开(公告)号：US20140113405A1

公开(公告)日：2014-04-24

申请号：US14055970

申请日：2013-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Ryosuke WATANABE ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L29/66

CPC classification number: H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.

Abstract translation: 形成具有低密度局部化水平的氧化物半导体膜。 为了改善包括氧化物半导体的半导体器件的电特性。 在与用作沟道的氧化物半导体膜接触的含有In或Ga的氧化物膜上加氧后，进行热处理，使含有In或Ga的氧化物膜中的氧转移到作为通道发挥作用的氧化物半导体膜， 使得氧化物半导体膜中的氧空位量减少。 此外，形成含有In或Ga的氧化物膜，在氧化膜上添加氧，在氧化膜上形成氧化物半导体膜，然后进行热处理。

公开(公告)号：US20220320339A1

公开(公告)日：2022-10-06

申请号：US17615859

申请日：2020-06-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Hiromi SAWAI ,  Ryosuke WATANABE ,  Shinobu KAWAGUCHI ,  Shunichi ITO

IPC: H01L29/786 ,  H01L29/66

Abstract: A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.

公开(公告)号：US20150287660A1

公开(公告)日：2015-10-08

申请号：US14724152

申请日：2015-05-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryosuke WATANABE ,  Naoto KUSUMOTO ,  Osamu NAKAMURA

IPC: H01L23/31 ,  G06K19/077 ,  H01L21/56

CPC classification number: G06K19/07749 ,  G06K19/07718 ,  G06K19/07722 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568

Abstract: Thin film integrated circuits are peeled from a substrate and the peeled thin film integrated circuits are sealed, efficiently in order to improve manufacturing yields. The present invention provides laminating system comprising transporting means for transporting a substrate provided with a plurality of thin film integrated circuits; first peeling means for bonding first surfaces of the thin film integrated circuits to a first sheet member to peel the thin film integrated circuits from the substrate; second peeling means for bonding second surfaces of the thin film integrated circuits to a second sheet member to peel the thin film integrated circuits from the first sheet member; and sealing means for interposing the thin film integrated circuits between the second sheet member and a third sheet member to seal the thin film integrated circuit with the second sheet member and the third sheet member.

Abstract translation: 薄膜集成电路从基板剥离，并且剥离的薄膜集成电路被有效地密封以提高制造成品率。 本发明提供了一种层叠体系，其包括用于输送设置有多个薄膜集成电路的基板的输送机构; 第一剥离装置，用于将薄膜集成电路的第一表面接合到第一片状部件，以从基板剥离薄膜集成电路; 第二剥离装置，用于将薄膜集成电路的第二表面接合到第二片状部件，以将薄膜集成电路从第一片状部件剥离; 以及密封装置，用于将所述薄膜集成电路插入所述第二片状部件和第三片状部件之间，以与所述第二片状部件和所述第三片状部件密封所述薄膜集成电路。

公开(公告)号：US20150104901A1

公开(公告)日：2015-04-16

申请号：US14574964

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L21/263 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Abstract translation: 本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。 在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了 针状晶体组是无定形区域或非晶态和微晶体混合的区域。 因此，可以形成具有良好电特性的高可靠性半导体器件。

公开(公告)号：US20150048368A1

公开(公告)日：2015-02-19

申请号：US14527076

申请日：2014-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Ryosuke WATANABE ,  Masashi OOTA ,  Noritaka ISHIHARA ,  Koki INOUE

IPC: H01L29/10 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/1054 ,  H01L22/14 ,  H01L29/247 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

Abstract translation: 提供了不容易引起晶体管的电特性变化并且具有高稳定性的氧化物半导体层叠膜。 此外，提供了在其沟道形成区域中包括氧化物半导体层叠膜并且具有稳定的电特性的晶体管。 氧化物半导体层叠膜包括依次堆叠并且各自含有铟，镓和锌的第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层。 第二氧化物半导体层中的铟的含量百分比高于第一氧化物半导体层和第三氧化物半导体层中的铟的含量百分比，并且通过CPM测量的氧化物半导体层叠膜的吸收系数低于或等于 在1.5eV至2.3eV的能量范围内等于3×10-3 / cm。

公开(公告)号：US20140034946A1

公开(公告)日：2014-02-06

申请号：US13953428

申请日：2013-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Ryosuke WATANABE ,  Masashi OOTA ,  Noritaka ISHIHARA ,  Koki INOUE

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/1054 ,  H01L22/14 ,  H01L29/247 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

Abstract translation: 提供了不容易引起晶体管的电特性变化并且具有高稳定性的氧化物半导体层叠膜。 此外，提供了在其沟道形成区域中包括氧化物半导体层叠膜并且具有稳定的电特性的晶体管。 氧化物半导体层叠膜包括依次堆叠并且各自含有铟，镓和锌的第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层。 第二氧化物半导体层中的铟的含量百分比高于第一氧化物半导体层和第三氧化物半导体层中的铟的含量百分比，并且通过CPM测量的氧化物半导体层叠膜的吸收系数低于或等于 在1.5eV至2.3eV的能量范围内等于3×10-3 / cm。

公开(公告)号：US20130299827A1

公开(公告)日：2013-11-14

申请号：US13947334

申请日：2013-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/12

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.