公开(公告)号：US12191399B2

公开(公告)日：2025-01-07

申请号：US18136431

申请日：2023-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/49 ,  H01L29/423 ,  H01L29/786

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US11508850B2

公开(公告)日：2022-11-22

申请号：US17271716

申请日：2019-08-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Naoki Okuno ,  Tetsuya Kakehata ,  Hiroki Komagata ,  Yuji Egi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US09806201B2

公开(公告)日：2017-10-31

申请号：US14636477

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshinori Yamada ,  Yusuke Nonaka ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara ,  Takashi Hamada ,  Mitsuhiro Ichijo ,  Yuji Egi

IPC: H01L29/786 ,  H01L27/1156

CPC classification number: H01L29/78693 ,  H01L27/1156 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

公开(公告)号：US08956929B2

公开(公告)日：2015-02-17

申请号：US13677663

申请日：2012-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuji Egi ,  Hideomi Suzawa ,  Shinya Sasagawa

IPC: H01L21/84 ,  H01L21/20 ,  H01L21/4763 ,  H01L21/302 ,  H01L29/786 ,  H01L27/12 ,  H01L27/146 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/0206 ,  H01L21/02565 ,  H01L21/44 ,  H01L21/465 ,  H01L21/4757 ,  H01L21/47635 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/14616 ,  H01L29/045 ,  H01L29/0684 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78693

Abstract: In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer.

Abstract translation: 在包括其中设置有侧壁绝缘层的侧表面上的氧化物半导体层，栅极绝缘层和栅电极层的晶体管的半导体器件中，依次层叠源电极层和漏电极层 提供与氧化物半导体层和侧壁绝缘层接触。 在制造半导体器件的方法中，层叠导电层和层间绝缘层以覆盖氧化物半导体层，侧壁绝缘层和栅极电极层。 然后，通过化学机械抛光方法去除层间绝缘层和栅电极层上的导电层的部分，从而形成源电极层和漏电极层。 在形成栅绝缘层之前，对氧化物半导体层进行清洗处理。

公开(公告)号：US11942370B2

公开(公告)日：2024-03-26

申请号：US17979807

申请日：2022-11-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Naoki Okuno ,  Tetsuya Kakehata ,  Hiroki Komagata ,  Yuji Egi

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78696 ,  H01L29/66742

Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US11646378B2

公开(公告)日：2023-05-09

申请号：US17167286

申请日：2021-02-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US10741679B2

公开(公告)日：2020-08-11

申请号：US15947902

申请日：2018-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kazutaka Kuriki ,  Yuji Egi ,  Hiromi Sawai ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Daisuke Matsubayashi

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L27/06 ,  H01L21/8258

Abstract: Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.

公开(公告)号：US10224433B2

公开(公告)日：2019-03-05

申请号：US15467288

申请日：2017-03-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuji Egi ,  Hideomi Suzawa ,  Shinya Sasagawa

IPC: H01L21/02 ,  H01L21/44 ,  H01L27/12 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66 ,  H01L21/465 ,  H01L27/146 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/4763

Abstract: In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer.

公开(公告)号：US09608123B2

公开(公告)日：2017-03-28

申请号：US14609814

申请日：2015-01-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuji Egi ,  Hideomi Suzawa ,  Shinya Sasagawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/146 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/0206 ,  H01L21/02565 ,  H01L21/44 ,  H01L21/465 ,  H01L21/4757 ,  H01L21/47635 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/14616 ,  H01L29/045 ,  H01L29/0684 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78693

Abstract: In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer.

公开(公告)号：US10923600B2

公开(公告)日：2021-02-16

申请号：US16044600

申请日：2018-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.