公开(公告)号：US12002912B2

公开(公告)日：2024-06-04

申请号：US17381744

申请日：2021-07-21

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Seong Kyu Jang ,  Yong Woo Ryu

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L25/0756 ,  H01L27/156

Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, a third-1 connector and a third-2 connector disposed between the second LED stack and the third LED stack, and a plurality of pads disposed over the first LED stack, and electrically connected to the first, second, and third LED stacks. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region.

公开(公告)号：US10388832B2

公开(公告)日：2019-08-20

申请号：US15969723

申请日：2018-05-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Ji Hyeon Jeong ,  Kyu Ho Lee ,  Joon Hee Lee

IPC: H01L27/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L27/15 ,  H01L33/44 ,  H01L33/32 ,  H01L33/20 ,  H01L33/14 ,  H01L33/06

Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.

公开(公告)号：US12183848B2

公开(公告)日：2024-12-31

申请号：US17964056

申请日：2022-10-12

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu Jang ,  Hong Suk Cho ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/38 ,  H01L23/00 ,  H01L33/02 ,  H01L33/44 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L33/40

Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

公开(公告)号：US11961873B2

公开(公告)日：2024-04-16

申请号：US17314562

申请日：2021-05-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Seong Kyu Jang ,  Yong Woo Ryu

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/382 ,  H01L33/62

Abstract: A light emitting device for a display according to an exemplary embodiment includes a first LED stack, a second LED stack located under the first LED stack, and a third LED stack located under the second LED stack. The light emitting device further includes a first bonding layer, a second bonding layer, a first planarization layer, a second planarization layer, lower buried vias, and upper buried vias. The first planarization layer is recessed inwardly to expose an edge of the second LED stack.

公开(公告)号：US20230074026A1

公开(公告)日：2023-03-09

申请号：US17987721

申请日：2022-11-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Seong Kyu Jang ,  Chan Seob Shin ,  Ho Joon Lee

IPC: H01L27/15 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L25/065 ,  H01L33/44

Abstract: A light emitting device including a plurality of semiconductor layers stacked in a vertical direction, a multiple quantum region disposed between the plurality of semiconductor layer, a first electrode electrically connected to at least one of the semiconductor layers, and an insulation layer disposed on the plurality of semiconductor layers, in which the at least one of the semiconductor layer includes a first surface from which a growth substrate is separated and a side surface forming an inclined angle with respect to the vertical direction, the insulation layer covers the inclined side surface, the first surface includes a textured surface through which light from the multiple quantum region is configured to pass, and the first electrode has a circular shape in a top view and a truncated cone shape in a cross-sectional view.

公开(公告)号：US11489087B2

公开(公告)日：2022-11-01

申请号：US16985077

申请日：2020-08-04

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu Jang ,  Hong Suk Cho ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/38 ,  H01L33/02 ,  H01L33/62 ,  H01L33/44 ,  H01L33/48 ,  H01L23/00 ,  H01L33/46 ,  H01L33/40

Abstract: A light emitting device including a substrate, a first semiconductor layer disposed on the substrate, a mesa including a second semiconductor layer and an active layer disposed on the first semiconductor layer, a first contact electrode contacting the first semiconductor layer, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode, and including a first opening disposed on the first contact electrode and a second opening disposed on the second contact electrode, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, and the first contact electrode includes an alloy layer.

公开(公告)号：US11437353B2

公开(公告)日：2022-09-06

申请号：US17096289

申请日：2020-11-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Seong Kyu Jang ,  Yong Woo Ryu ,  Jong Hyeon Chae

IPC: H01L25/075 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting device including a first LED stack, a second LED stack, and a third LED stack each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the second LED stack, a second planarization layer disposed on the first LED stack, lower buried vias passing through the first planarization layer, the second LED stack, and the first bonding layer and electrically connected to the semiconductor layers of the third LED stack, respectively, and upper buried vias passing through the second planarization layer and the first LED stack, in which a width of an upper end of each of the lower buried vias and the upper buried vias is greater than a width of a corresponding through hole.

公开(公告)号：US20220158031A1

公开(公告)日：2022-05-19

申请号：US17536074

申请日：2021-11-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Chan Seob Shin ,  Seom Geun Lee ,  Ho Joon Lee

IPC: H01L33/24 ,  H01L33/62 ,  H01L25/075

Abstract: A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.

公开(公告)号：US20180261723A1

公开(公告)日：2018-09-13

申请号：US15971974

申请日：2018-05-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Chi Hyun In ,  Jong Hyeon Chae ,  Hong Suk Cho

IPC: H01L33/20 ,  H01L33/40 ,  H01L33/62 ,  H01L33/46 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L21/76 ,  H01L23/00 ,  H01L33/00 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: An ultraviolet light emitting device is disclosed. An ultraviolet light emitting device according to a first embodiment of the disclosed technology comprises: a substrate having a first surface and a second surface facing the first surface; and a light emitting diode comprising a first type semiconductor layer, an active layer which emits ultraviolet light, and a second type semiconductor layer, the light emitting diode being formed on the first surface of the substrate, wherein the surface area of the substrate divided by the light emitting area of the light emitting diode may be ≤6.5.

公开(公告)号：US12272681B2

公开(公告)日：2025-04-08

申请号：US18535545

申请日：2023-12-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu Jang ,  Seom Geun Lee ,  Chan Seob Shin ,  Ho Joon Lee

IPC: H01L25/075 ,  H10H20/01 ,  H10H20/855 ,  H10H20/857

Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board and a second surface opposite to the first surface, a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, and a cover layer covering the second surface of the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices and has grooves in a region between adjacent light emitting devices, a portion of a top surface of the buffer material layer is disposed between adjacent light emitting devices, and the cover layer fills the grooves of the buffer material layer.