公开(公告)号：US20250115787A1

公开(公告)日：2025-04-10

申请号：US18901849

申请日：2024-09-30

Applicant: SK enpulse Co., Ltd.

Inventor： Deok Su HAN ,  Han Teo PARK ,  Yongsoo CHOI

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105

Abstract: A polishing composition for a semiconductor process includes abrasive particles, a polyoxyalkylene-based surfactant, and a skew inhibitor of Formula 1 below. The polyoxyalkylene-based surfactant has a hydrophile-lipophile balance (HLB) value of 13 or higher. In Formula 1 above, R1 is H, a methyl group or an ethyl group, and R2, R3, and R4 are each independently a methyl or ethyl group. When the polishing composition having these characteristics is applied to the polishing of a substrate comprising two or more layers, the polishing composition can provide a smoother polished surface while maintaining a certain level of polishing speed.

公开(公告)号：US20230332016A1

公开(公告)日：2023-10-19

申请号：US18297152

申请日：2023-04-07

Applicant: SK enpulse Co., Ltd.

Inventor： Deok Su HAN ,  Seung Chul HONG ,  Han Teo PARK ,  Hwan Chul KIM ,  Hyeong Ju LEE

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  H01L21/30625

Abstract: A composition for semiconductor processing, includes abrasive particles surface-modified with an amino silane-based compound; a copper erosion inhibitor, including an azole-based compound; a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and a surfactant, including fluorine in a molecule thereof. A surface of the surface-modified abrasive particles comprises an amino silane group.

公开(公告)号：US20240030041A1

公开(公告)日：2024-01-25

申请号：US18255783

申请日：2021-10-18

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Jang Kuk KWON ,  Seung Chul HONG

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/304 ,  H01L21/67

CPC classification number: H01L21/3212 ,  C09G1/02 ,  H01L21/304 ,  H01L21/67219

Abstract: The present invention relates to a polishing composition for a semiconductor process, a method of preparing the polishing composition, and a method of fabricating a semiconductor device using the polishing composition. The polishing composition for a semiconductor process contains abrasive particles, an accelerator, and a stabilizer. The polishing composition has excellent long-term storage stability because the particles contained therein do not aggregate even after the polishing composition is stored at 60° C. or higher for a long time. In addition, the polishing composition may be applied to a process of polishing an amorphous carbon layer, may exhibit a high removal rate, prevent carbon residue generated during the polishing process from being adsorbed onto a semiconductor substrate, and prevent contamination of a polishing pad. The present invention may also provide a method of fabricating a semiconductor device using the polishing composition for a semiconductor process.

公开(公告)号：US20250136842A1

公开(公告)日：2025-05-01

申请号：US18926638

申请日：2024-10-25

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Hyung-joo LEE ,  Yongsoo CHOI

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/321

Abstract: Disclosed is a polishing composition for a semiconductor process, including polishing particles, iron ions, and an iron ion stabilizer, in which the iron ion stabilizer comprises two or more carboxyl groups and the polishing composition has electrical conductivity of 200 μS/cm to 800 μS/cm. The polishing composition may polish a substrate surface including a tungsten pattern film having a fine pitch more smoothly.

公开(公告)号：US20240218251A1

公开(公告)日：2024-07-04

申请号：US18403539

申请日：2024-01-03

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Kangsik MYUNG ,  Deok Su HAN ,  Han Teo PARK ,  Yongsoo CHOI

IPC: C09K13/04 ,  A01N43/80 ,  A01N59/08 ,  B24B37/04 ,  C09K13/00 ,  H01L21/3105

CPC classification number: C09K13/04 ,  A01N43/80 ,  A01N59/08 ,  B24B37/044 ,  C09K13/00 ,  H01L21/31053

Abstract: A composition for semiconductor processing includes polishing particles, water, and a biocide. The biocide includes a first biocide and a second biocide, the first biocide includes a thiazolinone-based compound, and the second biocide includes a chloric acid-based compound.

公开(公告)号：US20240043718A1

公开(公告)日：2024-02-08

申请号：US18255600

申请日：2021-10-18

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Jang Kuk KWON ,  Seung Chul HONG

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/30625

Abstract: The present invention relates to a polishing composition for a semiconductor process, a method of preparing the polishing composition, and a method of fabricating a semiconductor device using the polishing composition. The polishing composition for a semiconductor process may be applied to a process of polishing an amorphous carbon layer, may exhibit a high removal rate of the amorphous carbon layer, may prevent the occurrence of defects by preventing carbon residue from being re-adsorbed onto a semiconductor substrate during the polishing process, and has excellent storage stability. The present invention may also provide a method of fabricating a semiconductor device using the polishing composition for a semiconductor process.

公开(公告)号：US20230332017A1

公开(公告)日：2023-10-19

申请号：US18297260

申请日：2023-04-07

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Kangsik MYUNG ,  Han Teo PARK ,  Deok Su HAN ,  Yongsoo CHOI

IPC: H01L21/768 ,  C09G1/02

CPC classification number: C09G1/02 ,  H01L21/76819 ,  H01L21/7684 ,  H01L21/76898

Abstract: A composition for semiconductor processing includes abrasive particles, and a dishing control additive, comprising a first dishing control additive and a second dishing control additive. The first dishing control additive includes a compound having a betaine group and a salicylic group or a derivative thereof, and the second dishing control additive includes an azole-based compound. The first dishing control additive includes 0.07 parts by weight or more based on 100 parts by weight of the abrasive particles, and the second dishing control additive includes 0.13 parts by weight or less based on 100 parts by weight of the abrasive particles.

公开(公告)号：US20230332014A1

公开(公告)日：2023-10-19

申请号：US18043451

申请日：2021-08-31

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Jang Kuk KWON ,  Seung Chul HONG

IPC: H01L21/3105 ,  C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31051

Abstract: The present invention relates to a semiconductor process polishing composition and a semiconductor device manufacturing method in which the polishing composition is applied, and can provide a preparation method applied to a CMP process for an amorphous carbon layer, and thus exhibits a high polishing rate, prevents, during a CMP process, the re-adsorption of carbon residue on a semiconductor substrate and the contamination of a polishing pad, and stabilizes an accelerator in the polishing composition so that the storage stability thereof is excellent. In addition, provided is a semiconductor device manufacturing method in which the semiconductor process polishing composition is applied.

公开(公告)号：US20240274439A1

公开(公告)日：2024-08-15

申请号：US18404979

申请日：2024-01-05

Applicant: SK enpulse Co., Ltd.

Inventor： Deok Su HAN ,  Hwan Chul KIM ,  Seung Chul HONG ,  Han Teo PARK

IPC: H01L21/3105 ,  C09G1/02

CPC classification number: H01L21/31053 ,  C09G1/02

Abstract: A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below;







Ds
=


MPS
2

-

D

1
⁢

0
2








[

Equation
⁢

1

]









In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.

公开(公告)号：US20230407135A1

公开(公告)日：2023-12-21

申请号：US18331193

申请日：2023-06-08

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Deok Su HAN ,  Kang Sik MYUNG ,  Han Teo PARK ,  Hyeong Ju LEE ,  Yong Soo CHOI

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/76898 ,  H01L21/7684 ,  H01L21/76819 ,  H01L21/3212 ,  H01L21/31053

Abstract: A polishing composition and method for semiconductor processing being applicable to a semiconductor process including a process of polishing a semiconductor wafer including a through-silicon via (TSV), being capable of implementing excellent polishing performance, being capable of minimizing defects such as dishing, erosion, and protrusion, being capable of realizing an evenly polished surface without deviation between films when polishing a surface where a plurality of different films is exposed to the outside, including abrasive grains and at least one additive, and having a value of 1.45 to 1.90 as calculated by Equation 1.