公开(公告)号：US10604865B2

公开(公告)日：2020-03-31

申请号：US16019528

申请日：2018-06-26

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Derrick S. Kamber ,  Bradley C. Downey

IPC: C30B19/02 ,  C30B29/40 ,  C30B7/10 ,  C30B23/04 ,  C30B25/04

Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

公开(公告)号：US10145026B2

公开(公告)日：2018-12-04

申请号：US13908836

申请日：2013-06-03

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Derrick S. Kamber ,  Bradley C. Downey

IPC: C30B29/40 ,  C30B7/10

Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

公开(公告)号：US10301745B2

公开(公告)日：2019-05-28

申请号：US15226552

申请日：2016-08-02

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Wenkan Jiang ,  Bradley C. Downey

IPC: C30B33/00 ,  C30B33/06 ,  C30B29/40 ,  C30B25/18 ,  C30B25/02 ,  C30B7/10 ,  C30B25/20 ,  H01L29/04 ,  H01L29/20 ,  H01L31/0304 ,  H01L33/32 ,  H01S5/32 ,  H01S5/323

Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

公开(公告)号：US10036099B2

公开(公告)日：2018-07-31

申请号：US14599335

申请日：2015-01-16

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Derrick S. Kamber ,  Bradley C. Downey

IPC: C30B7/10 ,  C30B29/40 ,  H01L21/02 ,  B01J3/00 ,  B01J3/04 ,  B01J3/06 ,  B30B11/00

CPC classification number: C30B7/105 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B29/406 ,  H01L21/02035 ,  H01L21/02389

Abstract: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.