公开(公告)号：US12094759B2

公开(公告)日：2024-09-17

申请号：US18451486

申请日：2023-08-17

Applicant: Soitec

Inventor： Didier Landru ,  Bruno Ghyselen

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/7813

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

公开(公告)号：US12002697B2

公开(公告)日：2024-06-04

申请号：US17042755

申请日：2019-03-22

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Énergies Alternatives

Inventor： François Rieutord ,  Frédéric Mazen ,  Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  G01N29/14 ,  G01N29/46 ,  H01L21/66

CPC classification number: H01L21/67288 ,  G01N29/14 ,  G01N29/46 ,  H01L21/67109 ,  H01L22/12 ,  G01N2291/2697

Abstract: A method for monitoring a heat treatment applied to a substrate comprising a weakened zone formed by implanting atomic species for splitting the substrate along the weakened zone, the substrate being arranged in a heating chamber, the method comprising recording sound in the interior or in the vicinity of the heating chamber and detecting, in the recording, a sound emitted by the substrate during the splitting thereof along the weakened zone. A device for the heat treatment of a batch of substrates comprises an annealing furnace comprising a heating chamber intended to receive the batch, at least one microphone configured to record sounds in the interior or in the vicinity of the heating chamber, and a processing system configured to detect, in an audio recording produced by the microphone, a sound emitted when a substrate splits.

公开(公告)号：US20240030060A1

公开(公告)日：2024-01-25

申请号：US17907243

申请日：2021-01-19

Applicant: Soitec ,  Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Inventor： Frédéric Mazen ,  François Rieutord ,  Marianne Coig ,  Helen Grampeix ,  Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/324

CPC classification number: H01L21/76254 ,  H01L21/3247

Abstract: A method for preparing a thin layer comprises a weakening step for forming a weakened zone in a central portion of a donor substrate, the weakened zone not extending into a peripheral portion of the donor substrate; a step of joining the main face of the donor substrate to a receiver substrate to form an assembly to be split; and a step of separating the assembly to be split, the separating step comprising a heat treatment resulting in the freeing of the thin layer from the donor substrate at the central portion thereof only. The method also comprises, after the separating step, a detaching step comprising the treating of the assembly to be split in order to detach the peripheral portion of the donor substrate from the receiver substrate.

公开(公告)号：US20240030033A1

公开(公告)日：2024-01-25

申请号：US18257217

申请日：2021-11-29

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

Inventor： Gweltaz Gaudin ,  Ionut Radu ,  Franck Fournel ,  Julie Widiez ,  Didier Landru

IPC: H01L21/18 ,  H01L21/762 ,  H01L21/02 ,  H01L21/322

CPC classification number: H01L21/187 ,  H01L21/76254 ,  H01L21/02002 ,  H01L21/3221

Abstract: A method for producing a semiconductor structure comprises: a) providing a working layer of a semiconductor material; b) providing a carrier substrate of a semiconductor material; c) depositing a thin film of a semiconductor material different from that or those of the working layer and the carrier substrate on a free face to be joined of the working layer and/or the carrier substrate; d) directly joining the free faces of the working layer and the carrier substrate, e) annealing the joined structure at an elevated temperature to bring about segmentation of the encapsulated thin film and form a semiconductor structure comprising an interface region between the working layer and the carrier substrate, the interface region comprising: —regions of direct contact between the working layer and the carrier substrate; and —agglomerates comprising the semiconductor material of the thin film adjacent the regions of direct contact.

公开(公告)号：US20230353115A1

公开(公告)日：2023-11-02

申请号：US18348940

申请日：2023-07-07

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cèdric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H03H3/10 ,  H10N30/072 ,  H10N30/853

CPC classification number: H03H3/10 ,  H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

公开(公告)号：US20220148911A1

公开(公告)日：2022-05-12

申请号：US17440450

申请日：2020-03-25

Applicant: Soitec

Inventor： Didier Landru ,  Bruno Ghyselen

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

公开(公告)号：US11239108B2

公开(公告)日：2022-02-01

申请号：US17043480

申请日：2019-03-22

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Didier Landru ,  Bruno Ghyselen

IPC: H01L21/00 ,  H01L21/762 ,  H01L21/768

Abstract: A process for producing a donor substrate for creating a three-dimensional integrated structure comprises the following steps: providing a semiconductor substrate comprising a surface layer, referred to as an active layer, and a layer comprising a plurality of cavities extending beneath the active layer, each cavity being separated from an adjacent cavity by a partition, forming an electronic device in a region of the active layer located plumb with a cavity, depositing a protective mask on the active layer so as to cover the electronic device while at the same time exposing a region of the active layer located plumb with each partition, and implanting atomic species through regions of the active layer exposed by the mask to form a weakened zone in each partition.

公开(公告)号：US20210057268A1

公开(公告)日：2021-02-25

申请号：US17043480

申请日：2019-03-22

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Didier Landru ,  Bruno Ghyselen

IPC: H01L21/762 ,  H01L21/768

Abstract: A process for producing a donor substrate for creating a three-dimensional integrated structure comprises the following steps: providing a semiconductor substrate comprising a surface layer, referred to as an active layer, and a layer comprising a plurality of cavities extending beneath the active layer, each cavity being separated from an adjacent cavity by a partition, forming an electronic device in a region of the active layer located plumb with a cavity, depositing a protective mask on the active layer so as to cover the electronic device while at the same time exposing a region of the active layer located plumb with each partition, and implanting atomic species through regions of the active layer exposed by the mask to form a weakened zone in each partition.

公开(公告)号：US20180309045A1

公开(公告)日：2018-10-25

申请号：US15769690

申请日：2016-10-17

Applicant: Soitec

Inventor： Didier Landru

IPC: H01L41/313 ,  H01L41/083 ,  H01L41/053 ,  H01L41/08 ,  H03H9/02

CPC classification number: H01L41/313 ,  H01L41/053 ,  H01L41/081 ,  H01L41/0838 ,  H03H9/02574

Abstract: A method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a′) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

公开(公告)号：US09922867B2

公开(公告)日：2018-03-20

申请号：US15018465

申请日：2016-02-08

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/324 ,  H01L21/762 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/324

Abstract: A method for transferring a useful layer onto a carrier substrate comprises formation of an embrittlement plane by implantation of light species into a first substrate in such a manner as to define the bounds of a useful layer between the plane and a surface of the first substrate, mounting of the carrier substrate onto a surface of the first substrate so as to form an assembly to be fractured, and thermal fracture treatment of the first substrate along the embrittlement plane in such a manner as to transfer the useful layer onto a support. During the thermal fracture treatment, the degree of peripheral adhesion is reduced at an interface between the carrier substrate and the first substrate.