公开(公告)号：US10115865B2

公开(公告)日：2018-10-30

申请号：US15785950

申请日：2017-10-17

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/48 ,  H01L33/62 ,  H01L33/60 ,  H01L33/40 ,  H01L33/20 ,  H01L33/16

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US20170141268A1

公开(公告)日：2017-05-18

申请号：US15418268

申请日：2017-01-27

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J.F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/20 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/16 ,  H01L33/40

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US10084121B2

公开(公告)日：2018-09-25

申请号：US15661515

申请日：2017-07-27

Applicant: SORAA, INC.

Inventor： Aurelien J. F. David ,  Rafael Aldaz ,  Michael Ragan Krames ,  Frank M. Steranka ,  Kevin Huang ,  Troy Trottier

IPC: H01L33/50 ,  H01L33/46 ,  H01L33/32

CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/46

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

公开(公告)号：US09583678B2

公开(公告)日：2017-02-28

申请号：US14615315

申请日：2015-02-05

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H05B37/02 ,  H01L29/22 ,  H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/40 ,  H01L33/60 ,  H01L33/16 ,  H01L33/20

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract translation: 公开了高性能发光二极管及其装置和方法实施例。 发光二极管器件发射波长为390nm至470nm，波长为405nm至430nm。 发光二极管器件的特征在于在器件的横向尺寸和器件的垂直尺寸之间具有几何关系（例如，纵横比），使得几何纵横比形成体积发光二极管，其传送基本平坦的电流密度 跨越设备（例如，跨过活动区域的横向尺寸测量）。 发光二极管器件的特征在于，有源区中的电流密度大于约175A / cm 2。

公开(公告)号：USD736724S1

公开(公告)日：2015-08-18

申请号：US29458298

申请日：2013-06-18

Applicant: SORAA, INC.

Designer： Frank Shum ,  Clifford Jue ,  Artem Mishin ,  Zinovy Dolgonosov ,  George Xie ,  Michael Ragan Krames ,  Jinhui Zhai

公开(公告)号：US10529902B2

公开(公告)日：2020-01-07

申请号：US16139609

申请日：2018-09-24

Applicant: SORAA, INC.

Inventor： Aurelien J. F. David ,  Rafael Aldaz ,  Michael Ragan Krames ,  Frank M. Steranka ,  Kevin Huang ,  Troy Trottier

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/46

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

公开(公告)号：US10436422B1

公开(公告)日：2019-10-08

申请号：US14543164

申请日：2014-11-17

Applicant: SORAA, INC.

Inventor： Laszlo Takacs ,  Wilfred A. Martis ,  Frank Shum ,  Artem Mishin ,  Vinod Khosla ,  Radha Nayak ,  Michael Ragan Krames

IPC: F21V33/00 ,  F21V17/10 ,  F21V17/00 ,  F21V5/04 ,  F21K99/00 ,  F21Y101/02

Abstract: Apparatus and methods of attaching accessories to LED lamps and for providing active accessories in LED lamps are disclosed. The active accessories include single-function active accessories as well as multi-function active accessories.

公开(公告)号：US20190165212A1

公开(公告)日：2019-05-30

申请号：US16168311

申请日：2018-10-23

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J.F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/40 ,  F21V29/70 ,  H01L33/20 ,  H01L33/16 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US20180053878A1

公开(公告)日：2018-02-22

申请号：US15785950

申请日：2017-10-17

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J.F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/60 ,  H01L33/20 ,  H01L33/62 ,  H01L33/16 ,  H01L33/48 ,  H01L33/40

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US09831388B2

公开(公告)日：2017-11-28

申请号：US15418268

申请日：2017-01-27

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H05B37/02 ,  H01L29/22 ,  H01L33/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/40 ,  H01L33/60 ,  H01L33/62 ,  H01L33/48

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.