公开(公告)号：US10084121B2

公开(公告)日：2018-09-25

申请号：US15661515

申请日：2017-07-27

Applicant: SORAA, INC.

Inventor： Aurelien J. F. David ,  Rafael Aldaz ,  Michael Ragan Krames ,  Frank M. Steranka ,  Kevin Huang ,  Troy Trottier

IPC: H01L33/50 ,  H01L33/46 ,  H01L33/32

CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/46

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

公开(公告)号：US09583678B2

公开(公告)日：2017-02-28

申请号：US14615315

申请日：2015-02-05

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H05B37/02 ,  H01L29/22 ,  H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/40 ,  H01L33/60 ,  H01L33/16 ,  H01L33/20

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract translation: 公开了高性能发光二极管及其装置和方法实施例。 发光二极管器件发射波长为390nm至470nm，波长为405nm至430nm。 发光二极管器件的特征在于在器件的横向尺寸和器件的垂直尺寸之间具有几何关系（例如，纵横比），使得几何纵横比形成体积发光二极管，其传送基本平坦的电流密度 跨越设备（例如，跨过活动区域的横向尺寸测量）。 发光二极管器件的特征在于，有源区中的电流密度大于约175A / cm 2。

公开(公告)号：US10115865B2

公开(公告)日：2018-10-30

申请号：US15785950

申请日：2017-10-17

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/48 ,  H01L33/62 ,  H01L33/60 ,  H01L33/40 ,  H01L33/20 ,  H01L33/16

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US20170141268A1

公开(公告)日：2017-05-18

申请号：US15418268

申请日：2017-01-27

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J.F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/20 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/16 ,  H01L33/40

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US10693041B2

公开(公告)日：2020-06-23

申请号：US16168311

申请日：2018-10-23

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/02 ,  H01L33/32 ,  H01L33/60 ,  F21V29/70 ,  H01L33/16 ,  H01L33/20 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

公开(公告)号：US09000466B1

公开(公告)日：2015-04-07

申请号：US13781633

申请日：2013-02-28

Applicant: Soraa, Inc.

Inventor： Rafael Aldaz ,  Aurelien David ,  Daniel F. Feezell ,  Thomas M. Katona ,  Rajat Sharma

IPC: H01L33/22 ,  H01L33/20 ,  H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/48

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/18 ,  H01L33/32 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0083

Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。

公开(公告)号：US20190035989A1

公开(公告)日：2019-01-31

申请号：US16139609

申请日：2018-09-24

Applicant: SORAA, INC.

Inventor： Aurelien J.F. David ,  Rafael Aldaz ,  Michael Ragan Krames ,  Frank M. Steranka ,  Kevin Huang ,  Troy Trottier

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/46

CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/46

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

公开(公告)号：US09761763B2

公开(公告)日：2017-09-12

申请号：US14135098

申请日：2013-12-19

Applicant: SORAA, INC.

Inventor： Frank M. Steranka ,  Rafael Aldaz ,  Seshasayee Ankireddi ,  Troy Trottier ,  Rohit Modi ,  Rajarshi Saha

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/50 ,  F21S8/10 ,  H01L25/075 ,  H01L33/20 ,  F21Y101/00 ,  F21K9/233 ,  F21Y115/10

CPC classification number: H01L33/44 ,  F21K9/233 ,  F21S41/143 ,  F21S41/155 ,  F21Y2101/00 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Techniques for fabricating and using arrays of violet-emitting LEDs coated with densely-packed-luminescent-material layers together with apparatus and method embodiments thereto are disclosed.

公开(公告)号：US10529902B2

公开(公告)日：2020-01-07

申请号：US16139609

申请日：2018-09-24

Applicant: SORAA, INC.

Inventor： Aurelien J. F. David ,  Rafael Aldaz ,  Michael Ragan Krames ,  Frank M. Steranka ,  Kevin Huang ,  Troy Trottier

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/46

Abstract: Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

公开(公告)号：US20190165212A1

公开(公告)日：2019-05-30

申请号：US16168311

申请日：2018-10-23

Applicant: SORAA, INC.

Inventor： Michael J. Cich ,  Aurelien J.F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

IPC: H01L33/32 ,  H01L33/40 ,  F21V29/70 ,  H01L33/20 ,  H01L33/16 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.