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    High-performance LED fabrication
    1.
    发明授权
    High-performance LED fabrication 有权

    公开(公告)号：US10693041B2

    公开(公告)日：2020-06-23

    申请号：US16168311

    申请日：2018-10-23

    申请人： SORAA, INC.

    发明人： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

    IPC分类号： H01L33/02 ,  H01L33/32 ,  H01L33/60 ,  F21V29/70 ,  H01L33/16 ,  H01L33/20 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62

    摘要： High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

    High efficiency group-III nitride light emitting diode
    2.
    发明授权
    High efficiency group-III nitride light emitting diode 有权

    公开(公告)号：US10734549B2

    公开(公告)日：2020-08-04

    申请号：US16446022

    申请日：2019-06-19

    申请人： SORAA, INC.

    发明人： Aurelien J. F. David ,  Christophe Hurni ,  Nathan Young

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/06

    摘要： A method of improving high-current density efficiency of an LED, said method comprising: (a) preparing a series of LEDs having decreasing defect densities, wherein each LED of said series has a peak IQE of at least 50%, and wherein each LED of said series has the same epitaxial structure; (b) determining an increase in IQEs at high-current density between at least two LEDs of said series; (c) preparing at least an additional LED of said series by reducing defect density relative to the previously obtained lowest defect density; and (d) reiterating steps (b) and (c) until said increase is at least 3% between two LEDs of said series having a decrease X in defect densities.

    High-performance LED fabrication
    4.
    发明授权
    High-performance LED fabrication 有权
    高性能LED制造

    公开(公告)号：US09583678B2

    公开(公告)日：2017-02-28

    申请号：US14615315

    申请日：2015-02-05

    申请人： SORAA, INC.

    发明人： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

    IPC分类号： H05B37/02 ,  H01L29/22 ,  H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/40 ,  H01L33/60 ,  H01L33/16 ,  H01L33/20

    CPC分类号： H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

    摘要： High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

    摘要翻译： 公开了高性能发光二极管及其装置和方法实施例。 发光二极管器件发射波长为390nm至470nm，波长为405nm至430nm。 发光二极管器件的特征在于在器件的横向尺寸和器件的垂直尺寸之间具有几何关系（例如，纵横比），使得几何纵横比形成体积发光二极管，其传送基本平坦的电流密度 跨越设备（例如，跨过活动区域的横向尺寸测量）。 发光二极管器件的特征在于，有源区中的电流密度大于约175A / cm 2。

    High-performance LED fabrication
    5.
    发明授权
    High-performance LED fabrication 有权

    公开(公告)号：US10115865B2

    公开(公告)日：2018-10-30

    申请号：US15785950

    申请日：2017-10-17

    申请人： SORAA, INC.

    发明人： Michael J. Cich ,  Aurelien J. F. David ,  Christophe Hurni ,  Rafael Aldaz ,  Michael Ragan Krames

    IPC分类号： H01L33/32 ,  H01L33/48 ,  H01L33/62 ,  H01L33/60 ,  H01L33/40 ,  H01L33/20 ,  H01L33/16

    摘要： High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.