公开(公告)号：US09165762B2

公开(公告)日：2015-10-20

申请号：US13869369

申请日：2013-04-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Andrew Price ,  Mark Carruthers ,  Daniel Archard ,  Stephen Burgess

IPC: H01L21/316 ,  H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

CPC classification number: H01L21/02274 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0234

Abstract: A method of forming silicon dioxide films using plasma enhanced chemical vapor deposition (PECVD) uses tetraethyl orthosilicate (TEOS), oxygen or a source of oxygen, and hydrogen as precursors. The method can be carried out at low temperatures in a range of 125 to 175° C. which is useful for manufacturing wafers with through silicon vias.

Abstract translation: 使用等离子体增强化学气相沉积（PECVD）形成二氧化硅膜的方法使用原硅酸四乙酯（TEOS），氧或氧源，以及氢作为前体。 该方法可以在125-175℃的低温下进行，这对于通过硅通孔制造晶片是有用的。

公开(公告)号：US20230136705A1

公开(公告)日：2023-05-04

申请号：US17976798

申请日：2022-10-29

Applicant: SPTS Technologies Limited

Inventor： Scott Haymore ,  Adrian Thomas ,  Tony Wilby ,  Stephen Burgess

IPC: H01L33/00 ,  H01L33/50

Abstract: A substrate is positioned on a substrate supporting upper surface of a substrate support. An arrangement of permanent magnets is positioned beneath the substrate supporting upper surface so that permanent magnets are disposed underneath the substrate. The deposition material is deposited into the recesses formed in the substrate by sputtering a sputtering material from a target of a magnetron device. While depositing the deposition material, the arrangement of permanent magnets provides a substantially uniform lateral magnetic field across the surface of the substrate which extends into a region beyond a periphery of the substrate to enhance resputtering of deposited material deposited into the recesses.

公开(公告)号：US12077863B2

公开(公告)日：2024-09-03

申请号：US18372123

申请日：2023-09-24

Applicant: SPTS Technologies Limited

Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/513

CPC classification number: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

公开(公告)号：US11802341B2

公开(公告)日：2023-10-31

申请号：US17144699

申请日：2021-01-08

Applicant: SPTS Technologies Limited

Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

IPC: C23C16/40 ,  C23C16/513 ,  C23C16/455

CPC classification number: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.