公开(公告)号：US09484436B2

公开(公告)日：2016-11-01

申请号：US14954635

申请日：2015-11-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/417 ,  H01L27/088

CPC classification number: H01L29/66681 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66696 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

公开(公告)号：US09324838B2

公开(公告)日：2016-04-26

申请号：US14151527

申请日：2014-01-09

Applicant: STMicroelectronics S.r.l.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/00 ,  H01L29/66 ,  H01L27/088 ,  H01L29/417 ,  H01L29/08 ,  H01L21/265 ,  H01L29/40 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/49 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.

Abstract translation: 一种电子半导体器件，包括：半导体本体，具有彼此相对的第一侧和第二侧，并且包括面向所述第二侧的第一结构区域和在所述第一结构区域上延伸并面向所述第一侧面的第二结构区域; 身体区域，其在所述第一侧面处在所述第二结构区域中延伸; 源区域，其在身体区域内延伸; 面向半导体主体的第一侧的LDD区; 和栅电极。 所述器件包括：沟槽电介质区域，其延伸穿过所述第二结构区域与所述沟槽电介质区域紧邻的第一沟槽导电区域; 以及与所述主体区域和所述源极区域电接触的第二沟槽导电区域。 半导体本体的第二侧的电触点经由第一结构区域与漏区电接触。

公开(公告)号：US11686673B2

公开(公告)日：2023-06-27

申请号：US17217662

申请日：2021-03-30

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Maria Eloisa Castagna ,  Salvatore Cascino ,  Viviana Cerantonio ,  Antonello Santangelo

IPC: G01N21/3504

CPC classification number: G01N21/3504

Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.

公开(公告)号：US10852263B2

公开(公告)日：2020-12-01

申请号：US16167165

申请日：2018-10-22

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore Cascino ,  Antonello Santangelo

IPC: G01N27/12 ,  H05B3/02 ,  H05B3/20 ,  H05B3/10 ,  B81C1/00

Abstract: A micro-heater element for a MEMS sensor device, envisages, in a single conductive layer: an outer ring, defining inside it a window; a heat-diffusion structure, arranged within the window, separated from the outer ring by a first separation gap; and connection elements, arranged between the heat-diffusion structure and the outer ring, and designed to connect the heat-diffusion structure to the outer ring. The outer ring is designed to dissipate energy upon passage of an electric current, and the heat-diffusion structure is designed to distribute, within the micro-heater element, the heat that is transferred by the outer ring through the connection elements.

公开(公告)号：US10571421B2

公开(公告)日：2020-02-25

申请号：US15795609

申请日：2017-10-27

Applicant: STMicroelectronics S.R.L.

Inventor： Antonello Santangelo ,  Salvatore Cascino ,  Roberto Modica ,  Viviana Cerantonio ,  Maurizio Moschetti ,  Alessandro Auditore

IPC: G01N27/22 ,  G01N27/00

Abstract: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered, and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material. The sensitive layer extends from opposite sides of the plane.

公开(公告)号：US20180052132A1

公开(公告)日：2018-02-22

申请号：US15795609

申请日：2017-10-27

Applicant: STMicroelectronics S.R.L.

Inventor： Antonello Santangelo ,  Salvatore Cascino ,  Roberto Modica ,  Viviana Cerantonio ,  Maurizio Moschetti ,  Alessandro Auditore

IPC: G01N27/22 ,  G01N27/00

CPC classification number: G01N27/223 ,  G01N27/00 ,  G01N27/22 ,  G01N27/227 ,  Y10T29/43

Abstract: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered, and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material. The sensitive layer extends from opposite sides of the plane.

公开(公告)号：US20160087084A1

公开(公告)日：2016-03-24

申请号：US14964130

申请日：2015-12-09

Applicant: STMicroelectronics S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/66 ,  H01L21/265

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

Abstract translation: 方法形成电子半导体器件，其包括具有彼此相对的第一侧和第二侧的主体，并且包括面向第二侧的第一结构区域和在第一结构区域上延伸并面向第一侧面的第二结构区域。 身体区域在第一侧的第二结构区域中延伸。 源极区域在体区内延伸，并且轻掺杂的漏极区域面向身体的第一侧。 在主体区域上形成栅电极。 沟槽电介质区域在与沟槽电介质区域紧邻的第一沟槽导电区域中延伸穿过第二结构区域。 第二沟槽导电区域与身体区域和源区域电接触。 身体上的电接触通过第一结构区域与漏区电接触。

公开(公告)号：US09816954B2

公开(公告)日：2017-11-14

申请号：US14606930

申请日：2015-01-27

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Salvatore Cascino ,  Roberto Modica ,  Viviana Cerantonio ,  Maurizio Moschetti ,  Alessandro Auditore

IPC: G01N27/00 ,  G01N27/22

CPC classification number: G01N27/223 ,  G01N27/00 ,  G01N27/22 ,  G01N27/227 ,  Y10T29/43

Abstract: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered, and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material. The sensitive layer extends from opposite sides of the plane.

公开(公告)号：US12166141B2

公开(公告)日：2024-12-10

申请号：US17719205

申请日：2022-04-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L21/74 ,  H01L29/06 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L27/146

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US11335823B2

公开(公告)日：2022-05-17

申请号：US16370636

申请日：2019-03-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/0312 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L27/144

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.