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公开(公告)号：US12256593B2
公开(公告)日：2025-03-18
申请号：US18073870
申请日：2022-12-02
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
IPC: H10K50/805 , G09G3/32 , G09G3/3233 , H10B10/00 , H10K50/30 , H10K59/12 , H10K59/121 , H10K71/00 , H10K77/10
Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US20240040861A1
公开(公告)日：2024-02-01
申请号：US18378656
申请日：2023-10-11
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Seungjun Lee , Seunghun Lee , Junhyung Lim
IPC: H10K59/124 , H10K71/00 , H01L27/12 , H10K59/121
CPC classification number: H10K59/124 , H10K71/00 , H01L27/1225 , H10K59/1213 , H01L27/1251 , H10K59/1216 , H01L27/1255 , H01L25/18
Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.
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公开(公告)号：US11335707B2
公开(公告)日：2022-05-17
申请号：US16371433
申请日：2019-04-01
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyoung Seok Son , Myounghwa Kim , Jaybum Kim , Yeon Keon Moon , Masataka Kano
Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.
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公开(公告)号：US10367012B2
公开(公告)日：2019-07-30
申请号：US15657508
申请日：2017-07-24
Applicant: Samsung Display Co., Ltd.
Inventor： Jihun Lim , Jaybum Kim , Joonseok Park , Kyoungseok Son , Junhyung Lim
IPC: H01L29/49 , H01L29/788 , H01L29/786 , H01L27/12 , H01L27/32 , G02F1/1362 , G02F1/1368 , H01L29/66
Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.
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公开(公告)号：US20240224619A1
公开(公告)日：2024-07-04
申请号：US18506623
申请日：2023-11-10
Applicant: Samsung Display Co., LTD.
Inventor： Myeongho Kim , Youngoo Kim , Jaybum Kim , Kyoungseok Son , Seunghun Lee
IPC: H10K59/123 , H10K59/12 , H10K59/131
CPC classification number: H10K59/123 , H10K59/1201 , H10K59/131 , H10K2102/311
Abstract: A display apparatus includes a substrate having a display area in which display elements are arranged, a first thin-film transistor in the display area and including a first semiconductor layer and a first gate electrode, the first semiconductor layer including an oxide semiconductor and the first gate electrode being insulated from the first semiconductor layer, and a first interlayer insulating layer between the first semiconductor layer and the first gate electrode, wherein the first interlayer insulating layer on the first semiconductor layer has a first length in a first direction, wherein the first gate electrode on the first interlayer insulating layer has a second length in the first direction, and wherein the first length is greater than the second length.
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Patent Agency Ranking
公开(公告)号：US11887991B2
公开(公告)日：2024-01-30
申请号：US17745427
申请日：2022-05-16
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoung Seok Son , Myounghwa Kim , Jaybum Kim , Yeon Keon Moon , Masataka Kano
IPC: H01L27/12 , H10K59/122 , H10K59/123
CPC classification number: H01L27/1218 , H01L27/127 , H01L27/1225 , H10K59/122 , H10K59/123
Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.
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公开(公告)号：US11751434B2
公开(公告)日：2023-09-05
申请号：US17453522
申请日：2021-11-04
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyoungseok Son , Dohyun Kwon , Jonghan Jeong , Jonghyun Choi , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
IPC: H10K59/121 , G09G3/3225 , H10K59/124 , G09G3/3233 , H10K59/126 , G09G3/3266 , G09G3/3275 , H01L27/12 , H01L29/786
CPC classification number: H10K59/1213 , G09G3/3225 , G09G3/3233 , H10K59/124 , H10K59/1216 , G09G3/3266 , G09G3/3275 , G09G2300/0413 , G09G2300/0426 , G09G2310/08 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L29/7869 , H01L29/78633 , H01L29/78675 , H10K59/126
Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
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公开(公告)号：US20220059634A1
公开(公告)日：2022-02-24
申请号：US17453522
申请日：2021-11-04
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok Son , Dohyun Kwon , Jonghan Jeong , Jonghyun Choi , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihn Lim
IPC: H01L27/32 , G09G3/3225 , G09G3/3233
Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
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公开(公告)号：US10658399B2
公开(公告)日：2020-05-19
申请号：US16515153
申请日：2019-07-18
Applicant: Samsung Display Co., Ltd.
Inventor： Jihun Lim , Jaybum Kim , Joonseok Park , Kyoungseok Son , Junhyung Lim
IPC: H01L29/49 , H01L29/788 , H01L29/786 , H01L27/12 , H01L27/32 , G02F1/1362 , G02F1/1368 , H01L29/66
Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.
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公开(公告)号：US10340472B2
公开(公告)日：2019-07-02
申请号：US15657369
申请日：2017-07-24
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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